Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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Patent•
13 Jan 2005
TL;DR: In this article, the authors proposed a method to improve the characteristics and yield of a semiconductor device by preventing the disappearance of the adjacent explosion preventing protective films of fuses by using the Ni films as masks.
Abstract: PROBLEM TO BE SOLVED: To improve the characteristics and yield of a semiconductor device by preventing the disappearance of the adjacent explosion preventing protective films of fuses SOLUTION: When the thicknesses of insulating films formed on the fuses F are reduced by etching the films, silicon oxide films 15 are caused to deposit on the surfaces of adjacent explosion preventing films (for example, Ti/TiN/W films) 7 exposed from a silicon oxide film 5 and polyimide films 17, barrier seed layers (for example, TiN/Ti film) 19a, and seed layers (for example, Cu film) 19b are formed Then, a resist film having wiring grooves is formed, and Cu films 19c and Ni films 19d are formed in the wiring grooves by the electroplating method Consequently, the adjacent explosion preventing films 7 are not eroded at the time of forming rewiring by etching the seed layers 19b and barrier seed layers 19a by using the Ni films 19d etc, as masks, because the surfaces of the films 7 are covered with the silicon oxide films 15 COPYRIGHT: (C)2005,JPO&NCIPI
125 citations
Patent•
15 Mar 2013TL;DR: In this article, a method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor.
Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
123 citations
Patent•
13 Nov 1996TL;DR: In this paper, a method for forming ultra-shallow doped regions, including the following steps: under a temperature of at least 500 DEG C in the chamber and from the reaction of silicon, oxygen, and some dopants for deposition of a doped silicon oxide film on the substrate of a heater, where the doped oxide film including dopant atoms and the chamber being kept under a pressure between 100 to 7600 torr.
Abstract: Method for forming ultra-shallow doped regions, including the following steps: under a temperature of at least 500 DEG C in the chamber and from the reaction of silicon, oxygen, and some dopants for deposition of a doped silicon oxide film on the substrate of a heater, where the doped silicon oxide film including dopant atoms and the chamber being kept under a pressure between 100 to 7600 torr; and heating the doped silicon oxide film for diffusion of the doped atoms and into the substrate for forming the ultra-shallow doped region.
123 citations
01 Dec 2005
TL;DR: A good correlation between the adsorbed amount of PAH and the improved strength properties of the paper was found, and the amount of increase depending on pH during adsorption.
Abstract: Polyallylamine hydrochloride (PAH) and polyacrylic acid (PAA) have been used to build up polyelectrolyte multilayers (PEM) on wood fibres and on silicon oxide surfaces, under various pH conditions. Consecutive adsorption onto silicon oxide surfaces of PAH and PAA were studied using stagnation point adsorption reflectometry, and the results showed a steady build-up of multilayers. Furthermore, by altering pH, the build-up of the multilayer could be made either linear or exponential in terms of adsorbed amount. Nitrogen analysis of sheets prepared from modified fibres showed that the adsorbed amount of PAH increased throughout PEM build-up, the amount of increase depending on pH during adsorption. Strength measurements of the sheets, i.e., stress at break and strain at break, showed significant improvements ranging from 60 to 200%, depending on both pH during adsorption and type of polyelectrolyte in the outer layer. A good correlation between the adsorbed amount of PAH and the improved strength properties of the paper was also found.
123 citations
Patent•
18 Apr 1986TL;DR: In this paper, a monolithic accelerometer is fabricated with an integral cantilever beam sensing element which is etched out of a silicon wafer from the back surface, and an integrated circuit is then formed on the front surface and dry etching is used to complete the alignment groove.
Abstract: A monolithic accelerometer is fabricated with an integral cantilever beam sensing element which is etched out of a silicon wafer from the back surface. A thermal silicon oxide is formed on both surfaces of a (100) silicon wafer. Silicon oxide is removed from the back surface in a pattern which defines the sides of the cantilever beam and the sides of an alignment groove. The width and orientation of the openings in the silicon oxide are selected to control the depth of etching when the wafer is subsequently etched with an anisotropic etchant. An integrated circuit is then formed on the front surface and dry etching is used to complete the groove and separate the sides of the beam from the wafer.
123 citations