Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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TL;DR: A conformal coating of PEDOT:PSS on textured silicon can greatly improve the junction quality with the main stability failure routes related to the moisture-induced poly(3,4-ethylenedioxythiophene) aggregations and the tunneling silicon oxide autothickening.
Abstract: Silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells with 16.2% efficiency and excellent stability are fabricated on pyramid-textured silicon substrates by applying a water-insoluble ester as capping layer. This shows that a conformal coating of PEDOT:PSS on textured silicon can greatly improve the junction quality with the main stability failure routes related to the moisture-induced poly(3,4-ethylenedioxythiophene) aggregations and the tunneling silicon oxide autothickening.
122 citations
TL;DR: In this article, a mechanism of hopping conduction is proposed to explain these results and to link with the d.c. results reported earlier on the same material, which are attributed to electronic hopping and one is associated with space charge injection.
122 citations
TL;DR: Both multilayer and monolayer graphene microelectrodes showed quasi-reversible behavior during voltammetric measurements in potassium ferricyanide, however, the standard heterogeneous charge transfer rate constant, k°, was estimated to be higher for monolayers graphene flakes.
Abstract: Results of a study on the electrochemical properties of exfoliated single and multilayer graphene flakes are presented. Graphene flakes were deposited on silicon/silicon oxide wafers to enable fast and accurate characterization by optical microscopy and Raman spectroscopy. Conductive silver paint and silver wires were used to fabricate contacts; epoxy resin was employed as masking coating in order to expose a stable, well defined area of graphene. Both multilayer and monolayer graphene microelectrodes showed quasi-reversible behavior during voltammetric measurements in potassium ferricyanide. However, the standard heterogeneous charge transfer rate constant, k{\deg}, was estimated to be higher for mono-layer graphene flakes.
122 citations
TL;DR: Park et al. as mentioned in this paper investigated the titanium disilicide formation on heavily doped silicon substrates with sheet resistance measurements, elemental depth profiling, and transmission electron microscopy, and concluded that dopant and knock-on oxygen atoms in solid solution in both the silicide and the silicon retard TiSi2 growth.
Abstract: Titanium disilicide formation on heavily doped silicon substrates was investigated with sheet resistance measurements, elemental depth profiling, and transmission electron microscopy. As found in a previous study [H.K. Park, J. Sachitano, M. McPherson, T. Yamaguchi, and G. Lehman, J. Vac. Sci. Technol. A 2, 264 (1984)], the TiSi2 growth rate depended on the dopant concentration. The growth rate was highest on undoped substrates, intermediate on heavily phosphorus‐doped substrates, and lowest on heavily arsenic‐doped substrates. However, the critical dopant concentration effect reported by Park et al. was not observed. The uniformity of the titanium‐silicon reaction was not seriously affected by heavy substrate doping. For heavily arsenic‐doped substrates (3.0×1021 As/cm3), TiAs precipitates formed at C49 TiSi2 grain boundaries, and the C49‐to‐C54 transformation temperature increased to 850 °C. For heavily phosphorus‐doped substrates (1.0×1021 P/cm3), no phosphides were unambiguously detected, and the C49‐to‐C54 transformation temperature remained below 800 °C. Discrete blocking layers at the silicide‐silicon interface, such as the native silicon oxide or a dopant‐rich phase, did not cause the reduction in silicide growth. Thus, it is concluded that dopant and knock‐on oxygen atoms in solid solution in both the silicide and the silicon retard TiSi2 growth.
122 citations
TL;DR: In this paper, the growth mechanism of the nanowire assemblies is discussed and branching-growth and batch-growth phenomena were observed in the samples and were believed to be responsible for the formation of the unique morphologies described here.
Abstract: Silicon oxide nanowire assemblies with fishbonelike, gourdlike, spindlelike, badmintonlike, and octopuslike morphologies were synthesized by the chemical vapor deposition of silane at 1150 °C with molten gallium as the catalyst via a vapor−liquid−solid process. The morphologies of the nanowire assemblies were temperature-dependent so that within a specific temperature range nanowire assemblies with a specific morphology were formed. Although the nanowire assemblies formed in different temperature ranges have different morphologies, they all are composed of a spherical liquid-gallium ball (3 to 5 μm in diameter) and a silicon oxide nanowire bunch that grows out from the lower-hemisphere surface of the gallium ball. Branching-growth and batch-growth phenomena were observed in the samples and were believed to be responsible for the formation of the unique morphologies described here. The growth mechanism of the nanowire assemblies is discussed.
121 citations