Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling

Abstract: We demonstrate experimentally bipolar (electrons and holes) current injection into silicon nanocrystals in thin nanocrystalline-Si/SiO2 multilayers. These light emitting devices have power efficiency of 0.17% and turn-on voltage of 1.7 V. The high electroluminescence efficiency and low onset voltages are attributed to the radiative recombination of excitons formed by both electron and hole injection into silicon nanocrystals via the direct tunneling mechanism. To confirm the bipolar character, different devices were grown, with and without a thick silicon oxide barrier at the multilayer contact electrodes. A transition from bipolar tunneling to unipolar Fowler–Nordheim tunneling is thus observed.

Multilevel integrated circuits employing fused oxide layers

Abstract: A multilevel semiconductor integrated circuit is fabricated by providing a plurality of substrates having an epitaxial layer on one surface and a silicon oxide layer on the surface of the epitaxial layer. The substrates are sequentially stacked with the silicon oxide layers in contact and fused together. One substrate is retained as a support, and other substrates are removed by etching after the fusion of the silicon oxide layers, thereby leaving only the stacked epitaxial layers separated by silicon oxide. The stacked structure facilitates the vertical fabrication of CMOS transistor pairs sharing a common gate electrode in an epitaxial layer between the two transistors. Electrical isolation between the epitaxial layers is provided by the fused silicon oxide or by removing the silicon oxide and some of the silicon thereby forming a void between adjacent epitaxial layers. Circuit devices in the plurality of epitaxial layers are readily interconnected by forming conductive vias between the epitaxial layers.

Silicon-carbon-nitride selective etch

Abstract: A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

Optical management in high-efficiency thin-film silicon micromorph solar cells with a silicon oxide based intermediate reflector

Abstract: Note: IMT-NE Number: 488 Reference PV-LAB-ARTICLE-2008-002doi:10.1002/pssr.200802118 Record created on 2009-02-10, modified on 2017-05-10

Highly selective doped oxide removal method

Abstract: A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.