Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Moving beyond molecules: Patterning solid-state features via dip-pen nanolithography with sol-based inks

Abstract: Herein, we described a new dip-pen nanolithography (DPN)-based method for the direct patterning of organic/inorganic composite nanostructures on silicon and oxidized silicon substrates. The approach works by the hydrolysis of metal precursors in the meniscus between an AFM tip and a surface according to the reaction 2MCln + nH2O → M2On + 2nHCl; M = Al, Si, and Sn. The inks are hybrid composites of inorganic salts with amphiphilic block copolymer surfactants. Three proof-of-concept systems involving Al2O3, SiO2, and SnO2 nanostructures on silicon and silicon oxide surfaces have been studied. Arrays of dots and lines can be written easily with control over feature size and shape on the sub-200 nm level. The structures have been characterized by atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray analysis. This work is important because it opens up the opportunity for using DPN to deposit solid-state materials rather than simple organic molecul...

Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization

Abstract: Thin Co(W,P) films, 100–200 nm thick, were electroless deposited on oxidized silicon wafers using sputtered copper or cobalt as catalytic seed layers. The purpose of these films is to encapsulate copper preventing its corrosion or to serve as a diffusion barrier against copper contamination of silicon oxide and silicon in ULSI interconnect and packaging applications. The electroless cobalt layers were integrated with electroless copper and found to function as barriers up to a temperature of 500°C. The microstructure of the barrier film was found to consist of grains of h.c.p. cobalt, ∼10 nm in diameter, in which the grain boundaries are most probably enriched by phosphorus and tungsten. It was found that the phosphorus and tungsten impurities stabilize the h.c.p. phase, postponing the transition to the f.c.c. phase by more than 80°C, compared to pure bulk cobalt. The observed good barrier properties can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. An advantage of these layers, relative to alternative diffusion barriers for copper, is their low electrical resistivity, 40 μΩ cm.

Coated article with anti-reflective layer(s) system

Abstract: Coated articles are provided with an anti-reflective (AR) layer(s) system which enables reduced reflection, increased visible transmission, and/or neutral color. In certain embodiments, the AR layer(s) system includes a silicon nitride layer(s), a silicon oxynitride layer, and/or a silicon oxide layer on the substrate over an infrared (IR) reflecting layer(s) such as silver. The AR system surprisingly enables improved visible transmission and/or reflection to be combined with more neutral color.

Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere

Abstract: Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.