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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Journal ArticleDOI
TL;DR: In this paper, an ordered nanochannel-arrays of anodic alumina were used as templates for the synthesis of aligned silicon oxide nanotubes and nanowires with a uniform diameter of ∼30 nm.
Abstract: Now one-dimensional structures with nanometer diameters are of great potential for testing and understanding fundamental concepts about the roles of dimensionality and size in optical, electrical, and mechanical properties and for applications in the semiconductor industry as well as mechanical and chemical areas. Since the discovery of carbon nanotubes in 1991 [1], the preparation of one-dimensional structures of nanotubes and nanowires have attracted a wide attention. In recent years, there has been intense interest surrounding the fabrication of nanotubes and wires of oxides have also been synthesized with the sol-gel template method. There are two main templates applied for producing oxide nanotubes. One involves carbon nanotubes as the template, which is coated with tetraethylorthosilicate or some other such precursor which is then oxidized. The inorganic hollow nanotubes of SiO 2, Al2O3, V2O5 and MoO3 are prepared in this way [2]. The other involves a membrane as the template, by which the inorganic nanofibers, such as TiO 2, MnO2, Co3O4, WO3 and ZnO have been formed, the desired materials being synthesized within the pores of nanoporous membranes [3, 4]. Recently, multi-element nanocables comprising multiple phases were successfully synthesized by means of laser ablation [5, 6], and many mesoporous metal oxides and hybrid hollow spheres were fabricated by the template method [7, 8]. There is currently an intensive effort to develop largescale semiconductor nanowire or nanotube materials, such as Si and silicon oxide SiO x (1< x< 2), with the uniform wide range of sizes up to 30 nm, which would open up new opportunities in the semiconductor and catalysis industries, but these structures are difficult to achieve at present. Although silica tubes with large diameter (about 1 μm) or imperfect SiO2 nanotubes have been prepared [9, 2], from the view of applications in the future, a detailed study on the macroscopic synthesis of aligned nanotubes and nanowires of silicon oxide with about 30 nm diameter will be significant. Here we report the macroscopic preparation of aligned silicon oxide nanotubes, bamboo-like nanofibers and nanowires with a uniform diameter of ∼30 nm using an ordered nanochannel-arrays of anodic alumina as templates. The ordered nanochannel-arrays of anodic alumina were prepared via the anodization of an aluminum textured pattern on the surface [10] in a 3% oxalic acidic solution under the constant-voltage condition (40 V). It is about 6μm and contains ordered cylindrical pores with the uniform diameter of 20–30 nm almost perpendicular to the film surface. The aligned silicon oxide nanostructures were prepared on this anodic alumina using a sol-gel method. At first, 52 ml of tetraethyl orthosilicate (TEOS) was added slowly into 115 ml ethanol to form TEOS solution. Secondly, 115 ml portion of ethanol were mixed with 18 ml of H 2O and 0.27 ml of HCl. Then the second solution was added slowly into TEOS solution whilst stirred in a bath to yield a silica sol at room temperature. After aging the sol for some days at room temperature or 50 ◦C, the highly ordered nanochannel-array of anodic alumina began to be dipped into the sol for 1 min, and then was removed and dried for more than 1 day. Finally, the sol-containing anodic alumina were heated in air at 200◦C for 1 day. We employed scanning electron microscopy (SEM, Jeol S500) and transmission electron microscopy (TEM, Jeol 3000F) to observe the morphology of the nanostructures obtained. For the SEM and TEM experiments, we used a chemical solution (H3PO4, CrO3 and H2O) to dissolve partly or entirely

115 citations

Patent
Shigenobu Maeda1
15 Nov 2002
TL;DR: In this article, a patterned resist (25 ) is formed so as to cover a low voltage operation region (A 2 ), a second LDD implantation process of implanting an impurity ion ( 14 ) by using the resist ( 25 ) as a mask, is performed over a silicon oxide film ( 6 ) thereby to form an impurate diffusion region ( 13 ) in the surface of a semiconductor substrate ( 1 ) in a high voltage operation regions (A 1 ).
Abstract: Provided are a semiconductor device that optimizes the operation characteristics such as of both an insulating gate type transistor for high voltage and an insulating gate type transistor for low voltage, and a method of manufacturing the same. Specifically, a patterned resist ( 25 ) is formed so as to cover a low voltage operation region (A 2 ), a second LDD implantation process of implanting an impurity ion ( 14 ) by using the resist ( 25 ) as a mask, is performed over a silicon oxide film ( 6 ) thereby to form an impurity diffusion region ( 13 ) in the surface of a semiconductor substrate ( 1 ) in a high voltage operation region (A 1 ). After this step, the silicon oxide film ( 6 ) in the high voltage operation region (A 1 ) contains the impurity during the second LDD implantation process whereas the silicon oxide film ( 6 ) in a low voltage operation region (A 2 ) contains no impurity. This leads to such a characteristic that in the following pre-treatment with a wet process, the silicon oxide film ( 6 ) containing the impurity in the high voltage operation region (A 1 ) is reduced in thickness, and the silicon oxide film ( 6 ) containing no impurity in the low voltage operation region (A 2 ) is not reduced in thickness.

115 citations

Patent
15 Mar 2013
TL;DR: In this article, a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H 2 ) is described, where the plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials.
Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H 2 ). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

115 citations

Journal ArticleDOI
TL;DR: In this article, the authors attests the presence of amorphous silicon clusters in a silicon oxide matrix and the dependence of the photoluminescence energy with the silicon volume fraction suggests the origin of the light emission could be due to a quantum confinement effect of carriers in the amorphized silicon clusters.
Abstract: Amorphous silicon oxide thin films were prepared by the coevaporation technique in ultrahigh vacuum. Different compositions were obtained by changing the evaporation rate of silicon. The samples were then annealed to different temperatures up to 950 °C. The composition and the structure were investigated using energy dispersive x-ray spectroscopy, infrared absorption measurements, and Raman spectroscopy. This study attests the presence of amorphous silicon clusters in a silicon oxide matrix. Optical transmission measurements were performed and interpreted in the field of the composite medium theory. The obtained results are in good agreement with the presented structural model. The photoluminescence in the red-orange domain was studied in relation with the structure. The correlation between the photoluminescence energy and intensity and the structure shows that the light emission originates from the silicon clusters embedded in the silicon oxide matrix. Moreover the dependence of the photoluminescence energy with the silicon volume fraction suggests the origin of the light emission could be due to a quantum confinement effect of carriers in the amorphous silicon clusters.

115 citations

Patent
20 Dec 2002
TL;DR: In this article, a method of manufacturing a semiconductor device which is capable of forming a gate structure having dimensions as designed is provided, and a photoresist is applied, and is then exposed to light using a photomask (18) for defining the ends of gate structures as seen in a direction of a gate width.
Abstract: A method of manufacturing a semiconductor device which is capable of forming a gate structure having dimensions as designed is provided. A silicon oxide film (4), a polysilicon film (5) and a silicon oxide film (6) are formed in the order named on a silicon substrate (1). Then, the silicon oxide film (6) is patterned to form silicon oxide films (14a, 14b). Next, a photoresist (15) is applied, and is then exposed to light using a photomask (18) for defining the ends of gate structures (25i-25k) as seen in a direction of a gate width. Next, the photoresist (15) is developed to form openings (21s-21u). Using the photoresist (15) as an etch mask, portions of the silicon oxide films (14a, 14b) exposed in the openings (21s-21u) are etched away.

115 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621