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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Patent
02 May 2013
TL;DR: In this article, a substrate is placed in a processing chamber, maintaining the processing chamber at a temperature below 400°C, and injecting a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber.
Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

115 citations

Journal ArticleDOI
TL;DR: In this article, the authors optimized the plasma-enhanced chemical vapor deposition and low-pressure chemical vaporization technologies of silicon oxynitride with respect to these requirements, and obtained an inhomogeneity of the refractive index of Dn<5E-3 and a nonuniformity of the layer thickness of < 1%.
Abstract: Silicon oxynitride is a very attractive material for integrated optics application, because of its excellent optical properties (~e.g. optical loss below 0.2 dB/cm!, the large refractive index range ~between 1.45 for silicon oxide and 2.0 for silicon nitride), and last but not least, the availability of reliable, low-cost fabrication technologies. Since good uniformity and reproducibility of the layers is extremely important for integrated optics applications, we have optimized the plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition technologies of silicon oxynitride with respect to these requirements. Over a 50x50 mm area on a 3 inch wafer, an inhomogeneity of the refractive index of Dn<5E-3 and a nonuniformity of the layer thickness of < 1% can be obtained. Furthermore, new challenges such as the conditioning of the reactor, in order to guarantee process reproducibility in the same order of magnitude, are discussed. The high optical loss of silicon oxynitride in the third telecommunication window (wavelength range 1530-1605 nm), which is caused by the overtones of the Si-H and N-H bonds, was decreased by thermal treatment. Silicon oxynitride waveguides having a refractive index of 1.48 and an optical loss below 0.2 dB/cm (at 1550 nm) were realized.

115 citations

Journal ArticleDOI
TL;DR: The roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability are demonstrated.
Abstract: Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX3) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiNx/SiNxOy/SiOy passivated and encapsulated CsPbBr3/PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiNx, SiNxOy, and SiOy liganded to the surfaces of the CsPbBr3 QDs to optimize the PLQY and the stability of CsPbB...

115 citations

Journal ArticleDOI
11 Dec 1996-Langmuir
TL;DR: In this paper, the structure of hexadecyltrimethylammonium bromide (C16TAB) layers was investigated on smooth and rough surfaces, showing that the roughness of the surface has a significant effect on the properties of the layer.
Abstract: Neutron reflection has been used to investigate the structure of hexadecyltrimethylammonium bromide (C16TAB) layers adsorbed at the silicon/silicon oxide/aqueous interface. Separate isotopic labeling of groups of four methylene groups at a time made it possible to determine the structure of the layer at a higher resolution than previously possible. The structure of the layer was investigated on smooth and rough surfaces. The roughness of the surface has a significant effect on the properties of the layer. On the rough surface the bilayer is shown to be thicker and to be unsymmetrical in the direction of the surface normal. The surface coverage was also found to be lower on the rough surface. As in previous studies the surface was found not to be completely covered, lending support to the idea that adsorption is in the form of aggregates. The division into smaller isotopically labeled fragments shows, however, that the aggregates strongly resemble bilayer fragments, and their overall thickness, at 32 ± 1 A...

115 citations

Journal ArticleDOI
TL;DR: In this paper, the thickness of the sidewall passivation layer depends on the width of the Si trench and ranges from ≂0.1μm for narrow trenches to ≂ 0.7 μm for wide Si trenches.
Abstract: Sidewall passivation layers produced in the formation of Si trenches by HCl/O2/BCl3 reactive ion etching have been characterized by angle‐resolved x‐ray photoemission measurements and secondary electron microscopy. Electron‐shading effects observed at grazing electron emission angles and electrostatic charging of insulating portions have been used to differentiate photoemission contribution from (i) the trench sidewall film (moderately insulating), (ii) the oxide mask (highly insulating), and (iii) the Si trench bottom (conductive). The sidewall passivation film for this process is found to be a silicon oxide. Only minor amounts of chlorine are incorporated in this film. The thickness of the sidewall passivation layer depends on the width of the Si trench and ranges from ≂0.1 μm for narrow trenches to ≂0.7 μm for wide Si trenches for our conditions. The Si taper formed in this trench etching process is produced by the simultaneous formation of the sidewall film which protects the underlying Si from etchin...

114 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621