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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Journal ArticleDOI
TL;DR: In this article, a silicon-graphite composites were prepared and investigated as anode materials for Li-ion batteries with small amounts of silicon and different binders, and the silicon powders were prepared by ball-milling crystalline silicon for 100 h and 200 h.
Abstract: In this study, silicon–graphite composites were prepared and investigated as anode materials for Li-ion batteries with small amounts of silicon and different binders. The silicon powders were prepared by ball-milling crystalline silicon for 100 h and 200 h. After 200 h, an average silicon particle size of 0.73 μm was obtained and XRD measurements confirmed the formation of an amorphous powder embedded within nanocrystalline regions. XPS analysis of the silicon samples showed that silicon particles were covered with a native silicon oxide layer that grows during ball-milling. Battery cycling of the silicon powders in half cells showed that the powder ball milled for 200 h gave the lowest first-cycle irreversible capacity and the highest reversible capacity reaching over 500 mA h g−1 after 50 cycles at C/12. Composites were made using graphite and only 5 wt% silicon powders. The silicon was found to be uniformly dispersed into the composites as evidenced by X-ray mapping and SEM. When tested in half cells using different binders, it was found that the polyetherimide binder showed the highest capacity reaching 514 mA h g−1 after 350 cycles at C/12, which is 1.6 times greater than commercial graphite anode. High rate cycling showed good capacity retention reaching half the capacity at 5 C.

104 citations

Patent
19 Jan 1994
TL;DR: In this article, a MOS semiconductor device and a method of making the same are arranged to include a semiconductor substrate of a first conductivity type, a pair of impurity diffused layers of a second conductivity types different from the first one, and mutually separated by a distance of 0.1 μm or less.
Abstract: A MOS semiconductor device and a method of making the same are arranged to include a semiconductor substrate of a first conductivity type; a pair of impurity diffused layers of a second conductivity type different from the first conductivity type formed in the semiconductor substrate and mutually separated by a distance of 0.1 μm or less; a gate insulating film including at least two layers of a silicon oxide film and a silicon nitride film and formed on a portion of the semiconductor substrate disposed between the pair of impurity diffused layers; and a gate electrode formed on the gate insulating film, wherein preferably the silicon nitride film has a thickness of 4.5 nm to 14.86 nm.

104 citations

Journal ArticleDOI
TL;DR: In this paper, Li-silicates are dominant over Li2O among matrix components of the experimental Li4.4SiO phase and thus accommodate more Li ions up to x = 5.2.
Abstract: Silicon oxide (SiO) has attracted much attention as a promising anode material for Li-ion batteries. The lithiation of SiO results in the formation of active Li–Si alloy cores embedded in an inactive matrix consisting of Li-silicates (Li2Si2O5, Li6Si2O7, and Li4SiO4) and Li2O. The maximum Li content in lithiated SiO (LixSiO) is known to be x = 4.4 based on experiments. Our calculations reveal that Li-silicates are dominant over Li2O among matrix components of the experimental Li4.4SiO phase. We show that LixSiO can become thermodynamically more stable and thus accommodate more Li ions up to x = 5.2 when Li2O dominates over Li-silicates. The minor portion of Li2O in the experimental phase is attributed to kinetically difficult transformations of Li-silicates into Li2O during electrochemical lithiation. The Li2O subphase can act as a major transport channel for Li ions because the Li diffusivity in Li2O is calculated to be faster by at least 2 orders of magnitude than in Li-silicates. We suggest that Li2O i...

104 citations

Journal ArticleDOI
TL;DR: In this article, the authors measured the contact potential and the electric field with a drift-tube detector and a quadrupole mass spectrometer and compared with a theoretical value.
Abstract: Micron‐sized particles (0.3 to 15 μ in radius) of metals such as aluminum, carbonyl nickel, molybdenum; semiconductors such as magnetite and zirconium hydride; and insulators such as aluminum oxide, silicon oxide, and eccospheres are charged by contact electrification in electric fields up to 8000 V in a 0.3‐cm gap. The charges are measured with a drift‐tube detector and a quadrupole mass spectrometer and compared with a theoretical value which includes the contact potential and the electric field. Experimentally, the contact charge is quite important for particles less than one micron in radius, but relatively unimportant for larger particles. The experimental values are in good agreement with the calculated values for the range of materials and particle sizes studied.

104 citations

Patent
18 Jan 1995
TL;DR: In this article, a film forming method of forming a silicon containing insulating film by plasma CVD is proposed. But the method is not suitable for the fabrication of thin films.
Abstract: The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.

104 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621