Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Electrical properties of vanadium oxide thin films for bolometer applications: processed by pulse dc sputtering

Abstract: Vanadium oxide (VOx) thin films were deposited on thermally grown silicon oxide substrates using a pure vanadium target in a pulsed dc sputtering technique. Film microstructure, electrical resistivity, temperature coefficient of resistance (TCR) and activation energy were studied as a function of the oxygen partial pressure (pO2) and growth temperatures. The mixed valence VOx thin films deposited at various substrate temperatures between 40 and 300 °C exhibited columnar grain structure even though the samples were found to be x-ray amorphous. The TCR and activation energies of the films increased from 0.4% (K−1) to 2.4% (K−1) and 0.04 eV to 0.28 eV, respectively, by controlling the pO2 content between depositions. The charge carrier transport in the VOx thin films was found to exhibit conventional and inverse Meyer–Neldel compensation mechanisms depending on the growth conditions.

Semiconductor device and SOI substrate

Abstract: A systematized semiconductor device having a gate insulating film which can be formed thinner than a silicon oxide film and which is less susceptible to deterioration. Further, a semiconductor device having improved reliability in which an insulating film or a buried oxide film in an SOI substrate with improved hot carrier resistance is provided. A MOSFET has a gate insulating film composed of a two-layer film including a silicon oxide film containing deuterium and a silicon nitride film containing deuterium which are provided in this order on a silicon substrate and a gate electrode composed of a three-layer film including a doped polysilicon film, a barrier metal layer, and a metal film of tungsten are provided in this order on the silicon nitride film. A silicon nitride film is provided on the metal film and a coating insulating film covers the gate insulating film, gate electrode and silicon nitride film.

The characteristic behavior of TMAH water solution for anisotropic etching on both Silicon substrate and SiO2 layer

Abstract: The present study aims at obtaining the etching rate of Si(1 0 0) surfaces as well as the silicon oxide layer when the surfaces are exposed to tetramethylammonium hydroxide (TMAH) water solution. The influence of TMAH solution concentration and solution temperature on the etching rate is also studied. In this work, the value of TMAH concentration ( C TMAH ) ranges from 2 to 25 wt.% and the etching temperature ranges from 70 to 90°C. Both n- and p-types silicon substrate were tested. Measured results show that etching changes little with the type of silicon substrate. In addition, the etching rate increases with the solution temperature but decreases with an increase in C TMAH for C TMAH greater than 8 wt.%. Among all experimental conditions, a maximum etching rate on the Si(1 0 0) surface reaches a value of 81 μm/h at a solution temperature of 90°C. Similarly, higher temperature can result in a faster etching rate of the SiO 2 surface; while the etching rate of SiO 2 surface decreases consistently with an increase in C TMAH . Measured results of surface roughness (Ra) on silicon substrate are reported after performing a 20 min etching at solution temperatures from 70 to 90°C. Much smoother substrate surfaces can be observed for higher concentrations.

Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics

Abstract: The effects of oxygen and nitrogen pretreatments on interface reaction kinetics during yttrium silicate formation on silicon are described. X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding and composition of films formed by oxidation of yttrium deposited on silicon. Capacitance–voltage testing is used to determine the quality of the dielectric and the electrical thickness. The effect of ultrathin silicon oxide, nitrided oxide, and nitrided silicon interfaces on metal oxidation kinetics is also described. When yttrium is deposited on clean silicon and oxidized, XPS and MEIS indicate significant mixing of the metal and the silicon, resulting in a film with Y–O–Si bonding and composition close to yttrium orthosilicate (Y2O3⋅SiO2). A thin (∼10 A) in situ preoxidation step is not sufficient to impede the metal/silicon reaction, whereas a nitrided silicon interface significantly reduces the silicon consumption rate, and the resulting film is c...