Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Method of making self-aligned halo process for reducing junction capacitance

Abstract: A method for forming an LDD structure using a self-aligned halo process is described. A gate silicon oxide layer is provided over the surface of a semiconductor substrate. A gate electrode is formed overlying the gate silicon oxide layer. A silicon oxide layer is grown on the sidewalls of the gate electrode and silicon nitride spacers are formed on the sidewalls of the silicon oxide layer. First ions are implanted into the semiconductor substrate and the substrate is annealed whereby heavily doped source and drain regions are formed within the semiconductor substrate not covered by the gate electrode and the silicon oxide and silicon nitride spacers. An oxide layer is grown over the heavily doped source and drain regions. Thereafter, the silicon nitride spacers are removed. Second ions are implanted to form lightly doped regions in the semiconductor substrate not covered by the oxide layer. Third ions are implanted to form a halo having opposite dosage and a deeper junction than the lightly doped regions. An insulating layer is deposited over the surface of the substrate. An opening is provided through the insulating layer to one of the source and drain regions. A conducting layer is deposited overlying the insulating layer and within the opening and patterned completing the fabrication of the integrated circuit device.

One-step synthesis of Si@C nanoparticles by laser pyrolysis: high-capacity anode material for lithium-ion batteries.

Abstract: Carbon-covered silicon nanoparticles (Si@C) were synthesized for the first time by a one-step continuous process in a novel two stages laser pyrolysis reactor. Crystallized silicon cores formed in a first stage were covered in the second stage by a continuous shell mainly consisting in low organized sp2 carbon. At the Si/C interface silicon carbide is absent. Moreover, the presence of silicon oxide is reduced compared to materials synthesized in several steps, allowing the use of such material as promising anode material in lithium-ion batteries (LIB). Auger Electron Spectroscopy (AES) analysis of the samples at both SiKLL and SiLVV edges proved the uniformity of the carbon coating. Cyclic voltammetry was used to compare the stability of Si and Si@C active materials. In half-cell configuration, Si@C exhibits a high and stable capacity of 2400 mAh g–1 at C/10 and up to 500 mAh g–1 over 500 cycles at 2C. The retention of the capacity is attributed to the protective effect of the carbon shell, which avoids d...

Electro-optic structure and process for fabricating same

Abstract: High quality epitaxial layers of oxide can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (26) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (24) of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides (45) may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

Atomic layer deposited titanium silicon oxide films

Abstract: A dielectric layer containing an atomic layer deposited titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include forming titanium silicates and/or mixtures of titanium oxide and silicon oxides as dielectric layers in devices in an integrated circuit. In an embodiment, a titanium silicon oxide film is formed by depositing titanium oxide by atomic layer deposition and silicon oxide by atomic layer deposition onto a substrate surface. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited titanium silicon oxide film, and methods for forming such structures.