scispace - formally typeset
Search or ask a question
Topic

Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
More filters
Patent
02 Dec 1985
TL;DR: In this article, an amorphous nonvolatile memory was obtained by using an amomorphous silicon carbide film in place of an ammorphous silicon nitride film. But, this method requires a large area and large capacitance and low cost.
Abstract: PURPOSE:To obtain an amorphous nonvolatile memory, which has excellent holding characteristics and reproducibility and a large area and large capacitance and cost thereof is low, by using an amorphous silicon carbide film in place of an amorphous silicon nitride film. CONSTITUTION:An insulating substrate 11, a lower electrode 12, an N type 13, which is hydrogenated previously by amorphous silicon and to which phosphorus is doped to a high degree, and an N type 14 to which phosphorus is doped similarly to a low degree are formed in the order. An silicon oxide film 15 in which amorphous silicon in oxidized through plasma anodizing, etc., a film 16, which consists of a hydrogenated amorphous silicon carbide film and contains carbon by 35atom% or more, and an upper electrode 17 are shaped in the order. Accordingly, a device having performance, which has not exist as nonvolatile memories, such as, a holding time of ten years or more, a writing time of 0.1musec or less, even fast erasing speed, a large area and large capacitance and low cost is obtained.

94 citations

Patent
03 Mar 2006
TL;DR: In this paper, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process.
Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

94 citations

Journal ArticleDOI
TL;DR: In this article, nanostructured silicon phases embedded in a silicon oxide matrix were implemented in thin film silicon solar cells and their combination with optimized deposition processes for the silicon intrinsic layers was shown to allow for an increased resilience of the cell design to the substrate texture, with high electrical properties conserved on rough substrates.
Abstract: Doped layers made of nanostructured silicon phases embedded in a silicon oxide matrix were implemented in thin film silicon solar cells. Their combination with optimized deposition processes for the silicon intrinsic layers is shown to allow for an increased resilience of the cell design to the substrate texture, with high electrical properties conserved on rough substrates. The presented optimizations thus permit turning the efficient light trapping provided by highly textured front electrodes into increased cell efficiencies, as reported for single junction cells and for amorphous silicon (a-Si)/microcrystalline silicon tandem cells. Initial and stabilized efficiencies of 12.7 and 11.3%, respectively, are reported for such tandem configuration implementing a 1.1 mu m thick microcrystalline silicon bottom cell.

94 citations

Patent
29 Mar 1999
TL;DR: In this article, a process for treating damaged surfaces of a low dielectric constant organo silicon oxide insulation layer of an integrated circuit structure to inhibit absorption of moisture which comprises treating such damaged surfaces with a hydrogen plasma.
Abstract: A process is described for treating damaged surfaces of a low dielectric constant organo silicon oxide insulation layer of an integrated circuit structure to inhibit absorption of moisture which comprises treating such damaged surfaces of said organo silicon oxide insulation layer with a hydrogen plasma. The treatment with hydrogen plasma causes hydrogen to bond to silicon atoms with dangling bonds in the damaged surface of the organo silicon oxide layer to replace organic material severed from such silicon atoms at the damaged surface, whereby absorption of moisture in the damaged surface of the organo silicon oxide layer, by bonding of such silicon dangling bonds with moisture, is inhibited.

93 citations

Patent
Kazuhito Tsutsumi1
24 May 1995
TL;DR: In this paper, a polycrystalline silicon film which is to be a channel is in a trench provided in a main surface of a silicon substrate, and a gate electrode is on the periphery of the gate insulating film.
Abstract: A polycrystalline silicon film which is to be a channel is in a trench provided in a main surface of a silicon substrate. A gate insulating film is on the periphery of a polycrystalline silicon film. A gate electrode is on the periphery of the gate insulating film. A silicon oxide film is on the periphery of the gate electrode. A source/drain film is on the periphery of the silicon oxide film. A silicon oxide film is on the periphery of the source/drain film. A source/drain film is electrically connected to the polycrystalline silicon film. A source/drain film is electrically connected to the polycrystalline silicon film. Since the polycrystalline silicon film extends along the depth direction of trench, a channel length can be sufficient to prevent a short channel effect. Also, compared to the case in which an epitaxial layer is used as a channel, since the polycrystalline silicon film is used as a channel, the time required for manufacturing the device can be shortened.

93 citations


Network Information
Related Topics (5)
Thin film
275.5K papers, 4.5M citations
96% related
Silicon
196K papers, 3M citations
94% related
Band gap
86.8K papers, 2.2M citations
93% related
Amorphous solid
117K papers, 2.2M citations
92% related
Oxide
213.4K papers, 3.6M citations
91% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621