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Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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TL;DR: In this paper, the growth mechanisms of silicon-based coatings realised with an atmospheric pressure glow dielectric barrier discharge are investigated. But the growth rate is proportional to the power and increases as the square of the silane concentration, and the results show that the film thickness profile as a function of the gas residence time in the discharge clearly shows two maxima.
Abstract: The aim of this work is to determine the properties and to understand the growth mechanisms of silicon-based coatings realised with an atmospheric pressure glow dielectric barrier discharge. Mixtures of SiH 4 and N 2 O, diluted in N 2 to reach the atmospheric pressure are used to obtain silicon oxide thin films. A longitudinal gas injection allows to study the coating properties as a function of the reactive gas decomposition and transformations level. The other parameters of this study are the silane rate and the plasma power. The thickness profile as a function of the gas residence time in the discharge clearly shows two maxima. SEM observations, ellipsometry and infrared results show that the first maximum which typically corresponds to a 400 μs residence time is due to radicals directly interacting with the surface while the second one observed for 10 ms residence time is due to the accumulation of aggregates formed in the gas phase following the interaction of radicals in the gas bulk. The first mechanism leads to dense silicon oxide coatings. Higher is the plasma power, denser is the coating: values of 98% of SiO 2 are reached. The growth rate increases with the silane concentration and the plasma power but saturation is observed around some tens of nanometers per minute. The second mechanism leads to porous deposit typically made of 30% of SiO 2 and 70% of void. The growth rate is proportional to the power and increases as the square of the silane concentration. The maximum coating roughness is observed when the two mechanisms significantly contribute to the film growth leading to the formation of ‘cauliflower’ type structure.
92 citations
TL;DR: In this article, the authors studied thin silicon oxides of metal-oxide-semiconductor (MOS) capacitors by transmission electron microscopy and found that Fe precipitates crossing the SiO2/Si interface penetrated into the silicon oxide from the silicon substrate.
Abstract: Thin silicon oxides of metal‐oxide‐semiconductor (MOS) capacitors were studied by transmission electron microscopy. The MOS capacitors were fabricated on silicon wafers which had been intentionally contaminated by Fe+ ion implantation. It was found that Fe precipitates crossing the SiO2/Si interface penetrated into the silicon oxide from the silicon substrate. They reduced the breakdown strength by inducing singularity points in the silicon oxide.
92 citations
TL;DR: In this article, thermal conductivities were determined in silicon oxide films of four thicknesses, which were deposited by plasma-enhanced chemical vapor deposition on monocrystalline silicon substrates.
91 citations
TL;DR: In this paper, the protectivity of various types of compatible passivation layers (organic polyimide and photoresist films, inorganic mono, duplex and triplex layers based on PECVD silicon oxide and silicon nitride) was investigated and improved on microelectrode arrays exposed to 1 M NaCl (pH 2 to 10) at 25°C.
91 citations
TL;DR: In this article, a magnetron-sputtered silicon oxide films after they were annealed at about 1000°C in the N2 atmosphere were observed to have an intense ultraviolet photoluminescence centered at 370 nm, which was associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon.
Abstract: Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence.
91 citations