Topic
Single crystal
About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.
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TL;DR: In this paper, all Raman active phonon modes predicted by the group theory were observed at 4-K and assigned by a polarized measurement, and drastic changes of Raman spectra at 600-700 and 1000-1100 K were discussed in combination with magnetic ordering and structural phase transition.
168 citations
TL;DR: In this article, the interaction of oxygen with the (111) surface of a single crystal is studied, mainly in the pressure range from 10 −3 up to 1 torr and at temperatures from room up to 500°C.
168 citations
TL;DR: In this article, a single crystal of Pb(Zn 1/3 Nb 2/3 )O 3 was investigated in the ferroelectric and paraelectric temperature regions.
Abstract: The ferroelectric properties of a single crystal of Pb(Zn 1/3 Nb 2/3 )O 3 were investigated in the ferroelectric and paraelectric temperature regions The crystal undergoes a ferroelectric phase transition in a wide temperature range, changing from cubic perovskite structure to rhombohedral one A broad peak was observed in the dielectric constant vs temperature curve, being characteristic of the disordered perovskite ferroelectrics The spontaneous polarizations were obtained from the hysteresis loop and the pyroelectric current, and there was found a discrepancy in both measurements Without applying an electric field the optical anisotropy was not detected But with the field the domain and the birefringence were observed The effects of the dc field on the dielectric constant and the birefringence were observed over the wide temperature range A brief explanation of the character of the phase transition as well as dielectric and optical properties were given
167 citations
TL;DR: In this article, a given undoped GaN layer deposited on (0001) sapphire by metalorganic chemical vapor deposition and a given high-pressure-grown GaN single crystal have been studied by three different techniques: Hemispherically scanned x-ray photoelectron diffraction, convergent beam electron diffraction and chemical etching.
Abstract: In order to resolve any doubt in lattice polarity calibrations, a given undoped GaN layer deposited on (0001) sapphire by metalorganic chemical vapor deposition and a given high-pressure-grown GaN single crystal have been studied by three different techniques: Hemispherically scanned x-ray photoelectron diffraction, convergent beam electron diffraction, and chemical etching. We conclude that Ga-polar surfaces are resistant to a 200 °C molten NaOH+KOH etching whereas N-polar surfaces are chemically active. All the observed flat GaN films grown on (0001) sapphire have Ga polarity. On the contrary, the native flat faces of undoped GaN bulk crystals have N polarity.
167 citations
TL;DR: The mechanism of electro-oxidation of methanol on gold is discussed in this paper, where it is shown that the surface structure of the electrode has little influence on the oxidation current, however potentials at which oxidation is observed depends on the crystallographic orientation.
167 citations