Topic
Single crystal
About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, a nonlinear optical crystal CsLiB6O10 (CLBO) is described that can be grown from either stoichiometric melt or from solution, and a large, high quality single crystal with dimensions of 14×11×11 cm3 was obtained by the top-seeded Kyropoulos method.
Abstract: A new nonlinear optical crystal CsLiB6O10 (CLBO), is described that can be grown from either stoichiometric melt or from solution. A large, high quality single crystal with dimensions of 14×11×11 cm3 was obtained by the top‐seeded Kyropoulos method. Fourth harmonic and fifth harmonic generations of the 1.064 μm Nd:YAG laser radiation with type‐I phase matching were realized in the CLBO crystal. Output pulse energies obtained were 110 mJ at 266 nm and 35 mJ at 213 nm.
563 citations
TL;DR: In this article, the Mott transition between a low-temperature insulating phase and a high temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature.
Abstract: Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.
560 citations
TL;DR: In this article, the structure parameters of AlN and GaN using X-ray intensities from single crystals collected with an automatic single crystal diffractometer were refined using a single crystal detector.
555 citations
546 citations