Topic
Single crystal
About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.
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10 Jul 2001TL;DR: In this paper, a GaN single crystal ingot is sliced in the planes parallel to the growing direction to obtain a low-dislocation density GaN substrate, which is obtained by slicing the ingot in the plane parallel to a growing direction.
Abstract: GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained.
124 citations
TL;DR: In this paper, the synthesis of high quality single crystal graphene on polycrystalline Cu foil using solid waste plastic as carbon source in an ambient pressure (AP) chemical vapor deposition (CVD) process was reported.
124 citations
TL;DR: Direct Cu-to-Cu bonding was achieved at temperatures of 150–250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10–60 min at 10−3 torr.
Abstract: Direct Cu-to-Cu bonding was achieved at temperatures of 150–250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10–60 min at 10−3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.
123 citations
TL;DR: In this paper, a single shot diffraction pattern from a single crystal gold sample was recorded using ultrashort 3.5 MeV electron bunches from a radio frequency photoinjector.
Abstract: We report the experimental demonstration of time-resolved relativistic electron diffraction. Single shot diffraction patterns from a single crystal gold sample were recorded using ultrashort 3.5 MeV electron bunches from a radio frequency photoinjector. By scanning the pump pulse time-delay, we studied the Bragg peaks amplitude change due to the laser-induced melting of the sample. The observed time scale matches the one predicted using a simple two temperature model of the heating of the thin foil. Time-resolved relativistic electron diffraction using megaelectronvolt electron beams with 107 particles in 100 fs bunch length opens exciting possibilities in ultrafast structural dynamics.
123 citations
TL;DR: In this paper, the authors report the observation of ambipolar transport in field effect transistors fabricated on single crystals of copper and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes.
Abstract: We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3?cm2/V?s in both materials. The highest mobility for electrons is observed for iron-phthalocyanines and is approximately one order of magnitude lower. Our measurements indicate that these values are limited by extrinsic contact effects due to the transistor fabrication and suggest that considerably higher values for the electron and hole mobility can be achieved in these materials.
123 citations