Topic
Single crystal
About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.
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TL;DR: In this article, the performance of single crystal Ce:Gd 3 (Al,Ga) 5 O 12 (Ce:GAGG) showed good scintillation response under γ-ray exposure.
401 citations
TL;DR: This work measures surface recombination dynamics in CH3NH3PbBr3 perovskite single crystals using broadband transient reflectance spectroscopy and suggests that the planar grain size for the perovkite thin films should be larger than ∼30 μm to avoid the influence ofsurface recombination on the effective carrier lifetime.
Abstract: Surface recombination velocity can have a major impact on solar cell performance. Here, Yang et al. measure surface recombination dynamics in perovskite single crystals using broadband transient reflectance spectroscopy. Grain size is crucial to avoid the effects of surface recombination on carrier lifetime.
400 citations
396 citations
TL;DR: The physicochemical mechanisms underlying the nucleation and growth kinetics of graphene on copper are studied, providing new insights necessary for the engineering synthesis of wafer-scale single crystals.
Abstract: The synthesis of wafer-scale single crystal graphene remains a challenge toward the utilization of its intrinsic properties in electronics. Until now, the large-area chemical vapor deposition of graphene has yielded a polycrystalline material, where grain boundaries are detrimental to its electrical properties. Here, we study the physicochemical mechanisms underlying the nucleation and growth kinetics of graphene on copper, providing new insights necessary for the engineering synthesis of wafer-scale single crystals. Graphene arises from the crystallization of a supersaturated fraction of carbon-adatom species, and its nucleation density is the result of competition between the mobility of the carbon-adatom species and their desorption rate. As the energetics of these phenomena varies with temperature, the nucleation activation energies can span over a wide range (1–3 eV) leading to a rational prediction of the individual nuclei size and density distribution. The growth-limiting step was found to be the a...
393 citations
TL;DR: In this paper, single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing, and electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques.
Abstract: Buried single‐crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations—those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques and comparable to bulk CoSi2.
391 citations