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Single crystal

About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.


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Journal ArticleDOI
TL;DR: In this article, a comparative study and Raman characterization of the formation of graphene on single crystal Ni (111) and polycrystalline Ni substrates using chemical vapor deposition (CVD) was performed.
Abstract: We report a comparative study and Raman characterization of the formation of graphene on single crystal Ni (111) and polycrystalline Ni substrates using chemical vapor deposition (CVD). Preferential formation of monolayer/bilayer graphene on the single crystal surface is attributed to its atomically smooth surface and the absence of grain boundaries. In contrast, CVD graphene formed on polycrystalline Ni leads to a higher percentage of multilayer graphene (≥3 layers), which is attributed to the presence of grain boundaries in Ni that can serve as nucleation sites for multilayer growth. Micro-Raman surface mapping reveals that the area percentages of monolayer/bilayer graphene are 91.4% for the Ni (111) substrate and 72.8% for the polycrystalline Ni substrate under comparable CVD conditions. The use of single crystal substrates for graphene growth may open ways for uniform high-quality graphene over large areas.

361 citations

Journal ArticleDOI
TL;DR: Magnesium oxide single crystal electronic spectrum obtained from reflectance spectra, observing large plasma peak in energy loss function as mentioned in this paper, was obtained from the reflectance spectrum of a single crystal as mentioned in this paper.
Abstract: Magnesium oxide single crystal electronic spectrum obtained from reflectance spectra, observing large plasma peak in energy loss function

361 citations

Journal ArticleDOI
TL;DR: It is suggested that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.
Abstract: Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic–inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid...

360 citations

Journal ArticleDOI
TL;DR: In this article, the magnetoresistance behavior of Fe3O4 in polycrystalline thin film, powder compact, and single-crystal form is compared and it is shown that negative magnetoreduction with peaks at the coercive field, observed in thin films and powder compacts but not in the single crystal, is due to fieldinduced alignment of the magnetization of contiguous grains.
Abstract: The magnetoresistance behavior of Fe3O4 in polycrystalline thin film, powder compact, and single-crystal form are compared. Negative magnetoresistance with peaks at the coercive field, observed in thin films and powder compacts but not in the single crystal, is due to field-induced alignment of the magnetization of contiguous grains. The effect is associated with intergranular transport of spin-polarized electrons.

355 citations

Journal ArticleDOI
TL;DR: Most of the shallow acceptor levels due to boron in single-crystal silicon can be neutralized by atomic hydrogen at temperatures between 65 and 300 C as discussed by the authors, which can result in a sixfold increase in resistivity.
Abstract: Most of the shallow acceptor levels due to boron in single-crystal silicon can be neutralized by atomic hydrogen at temperatures between 65 and 300\ifmmode^\circ\else\textdegree\fi{}C. This treatment can result in a sixfold increase in resistivity.

353 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023485
20221,042
20211,353
20201,795
20191,797
20181,782