Topic
Single crystal
About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.
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TL;DR: In this paper, the response of a wide range of crystalline oxides to ion implantation and subsequent thermal processing is reviewed, including Al 2 O 3, LiNbO 3, CaTiO 3, SrTiO3, ZnO, and MgO, as well as the nonoxide materials Si 3 N 4 and SiC.
230 citations
Patent•
27 May 1998
TL;DR: In this paper, an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element.
Abstract: After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
229 citations
TL;DR: A unique single crystal-to-single crystal transformation from 0D discrete molecules to a 2D coordination polymer exhibits magnetic property changes from a short-range ferromagnetic coupling to a long-range canting antiferromagnetic ordering.
Abstract: A unique single crystal-to-single crystal transformation from 0D discrete molecules to a 2D coordination polymer exhibits magnetic property changes from a short-range ferromagnetic coupling to a long-range canting antiferromagnetic ordering.
229 citations
TL;DR: In this paper, single crystal high mobility organic field-effect transistors were prepared on prefabricated substrates using a "flip-crystal" approach, which minimized crystal handling and avoided direct processing of the crystal that may degrade the field effect transistors' electrical characteristics.
Abstract: We report on single crystal high mobility organic field-effect transistors prepared on prefabricated substrates using a “flip-crystal” approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the field-effect transistors' electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4cm2∕Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the “intrinsic” transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals.
229 citations
229 citations