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Single crystal

About: Single crystal is a research topic. Over the lifetime, 59617 publications have been published within this topic receiving 870828 citations.


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Journal ArticleDOI
TL;DR: In this article, a phenomenological model involving distortion of the band structure is proposed to explain the results of kinetic measurements of a highly dense transparent YAG: Ce-ceramic.

177 citations

Journal ArticleDOI
TL;DR: The first characterization of single-crystal devices of a new solution processable material that achieves technologically relevant performance in the polycrystalline thin film state was presented in this paper.
Abstract: We present the first characterization of single-crystal devices of a new solution processable material that we have previously demonstrated achieves technologically relevant performance in the polycrystalline thin film state. Our studies include growth and investigation of structural, as well as electronic properties of single crystals of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). Field-effect transistors fabricated on the surface of diF-TESADT single crystals exhibit excellent electronic properties: mobility as high as 6 cm2/Vs, large current on/off ratios (Ion/Ioff = 1 × 108), small subthreshold slopes (S = 1 V/dec), and extremely small hysteresis in the current−voltage characteristics. These properties, coupled with solution processability, make diF-TESADT attractive for electronic applications and demonstrate the technological potential of soluble oligomers.

177 citations

Journal ArticleDOI
TL;DR: In this paper, singlecrystal CoSi2 films were grown under ultrahigh vacuum conditions on Si (111) by both standard deposition and molecular beam epitaxy techniques and analyzed by Rutherford backscattering spectroscopy and channeling, transmission electron microscopy, and low energy electron diffraction.
Abstract: Single‐crystal CoSi2 films have been grown under ultrahigh vacuum conditions on Si (111) by both standard deposition and molecular beam epitaxy techniques. Films were analyzed by Rutherford backscattering spectroscopy and channeling, transmission electron microscopy, and low energy electron diffraction. The films are free of grain boundaries but are rotated 180° about the normal to the Si surface. The crystalline perfection, as measured by channeling, is the best yet reported for an epitaxial silicide system. The expected hexagonal misfit dislocation arrays, along with a coarser triangular defect structure, are confined to the plane of the interface.

177 citations

Journal ArticleDOI
TL;DR: The use of the Z+1 approximation to describe the core hole is investigated both by explicit use of this approximation and by performing calculations for 1s and 3d core holes, respectively.
Abstract: High resolution measurements are reported of the surface core-level shift of the 3d level for the Rh(111), Rh(110), Pd(111), Pd(110), and Ag(111) single-crystal surfaces. These measurements and earlier ones for the Mo(110), Rh(100), and Pd(100) surfaces are analyzed by ab initio calculations of the surface core-level shift. The calculations are found to reproduce well the trends of the experimental shifts with the 4d metal and with the crystal plane. The comparison between these experimental and theoretical results demonstrates the importance of proper inclusion of final-state effects for accurate calculations of surface core-level shifts. A core hole in a surface atom is found to be better screened than one in a bulk atom for the 4d metals to the left of Pd in the Periodic Table. The use of the Z+1 approximation to describe the core hole is investigated both by explicit use of this approximation and by performing calculations for 1s and 3d core holes, respectively. The Z+1 approximation is found to be well obeyed in the case of Ag whereas for the rest of the 4d transition metals it is less precise, introducing errors of typically 0.1 eV.

177 citations

Journal ArticleDOI
TL;DR: In this paper, 1.1-at.%-Nd-doped YAG ceramics with controlled amounts of grain-boundary phase were fabricated by a solid-state reaction method using high-purity powders.
Abstract: For the present study, 1.1-at.%-Nd-doped YAG ceramics with controlled amounts of grain-boundary phase were fabricated by a solid-state reaction method using high-purity powders. The optical scattering loss of the Nd:YAG ceramics, obtained from Fresnels equation, increased simply with increased amounts of grain-boundary phase. The continuouswave laser output power of the Nd:YAG ceramics clearly was related to the scattering loss coefficients of the specimens that, in turn, were affected by the amount of grain-boundary phase. Although the scattering loss coefficients of Nd:YAG ceramics with grain-boundary-free structure and a lower pore volume (}150 vol ppm) were almost equivalent to those of a 0.9-at.%-Nd-doped YAG single crystal grown by the Czochralski method, the laser output power of the Nd:YAG ceramics exceeded that of the Nd:YAG single crystal with increased exciting power under excitation with an 808 nm diode laser because of the large amount of neodymium additives. Lasing performance was not affected by the existence of grain boundaries in the polycrystalline specimen.

177 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023485
20221,042
20211,353
20201,795
20191,797
20181,782