Single domain

About: Single domain is a research topic. Over the lifetime, 5399 publications have been published within this topic receiving 122355 citations.

Magnetic properties of some synthetic sub-micron magnetites

Abstract: The grain size dependence of various mineral (rock) magnetic parameters has been determined, using a series of essentially pure, fine-grained (single domain, SD) and ultrafine-grained (superparamagnetic, SP) magnetites. The parameters measured include low-field susceptibility, frequency-dependent susceptibility, saturation remanence (SIRM), anhysteretic susceptibility (XARM), and coercivity of remanence ((B0)CR). The magnetites were produced in experiments designed to simulate possible pedogenic and biogenic pathways of magnetite formation. Their mean grain sizes range from 0.012 um to 0.06 um, and hence span the SP/SD boundary. Isothermal magnetic measurements were performed on two separate subsets of differing packing densities. The response of the magnetic parameters is modified by interaction effects, but they display continuous variation across the entire grain size range, confirming their value for rapid magnetic granulometry. Within the fine and ultrafine end of the magnetite grain size spectrum, susceptibility, frequency dependent susceptibility and XARM are notably responsive to grain size change. In terms of magnetic response (and also possibly of grain size, shape and absence of cation substitution), these synhtetic magnetites represent close analogues of those found in some soils and sediments.

Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Abstract: Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.

Magnetization vector manipulation by electric fields

Abstract: Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampere field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.

Magnetic force microscopy: General principles and application to longitudinal recording media

Abstract: This paper discusses the principles of magnetic force microscopy (MFM) and its application to magnetic recording studies. We use the ac detection method which senses the force gradient acting on a small magnetic tip due to fields emanating from the domain structure in the sample. Tip fabrication procedures are described for two types of magnetic tips: etched tungsten wires with a sputter‐deposited magnetic coating and etched nickel wires. The etched nickel wires are shown to have an apex radius on the order of 30 nm and a taper half‐angle of approximately 3°. Lorentz‐mode transmission electron microscopy of the nickel tips reveals that the final 20 μm is essentially single domain with magnetization approximately parallel with the tip axis. Images of written bit transitions are presented for several types of magnetic media, including CoPtCr, CoSm, and CoCr thin films, as well as γ‐Fe2O3 particulate media. In general, the written magnetization patterns are seen with high contrast and with resolution better ...