Showing papers on "Snapback published in 1984"
01 Apr 1984
TL;DR: In this article, a new type of failure mode of the gate dielectric breakdown in an MOS transistor induced by the snapback phenomena is reported, which results in a gate-to-drain short, and was found to require a minimum critical current, Idcrit, after the transistor goes in the Snapback.
Abstract: A new type of failure mode of the gate dielectric breakdown in an MOS transistor induced by the snapback phenomena is reported. Unlike a typical gate oxide breakdown which is caused by a voltage stress on the gate, this failure mode is caused by a source-drain bipolar current resulting from the snapback action. This failure mode results in a gate-to-drain short, and was found to require a minimum critical current, Idcrit, after the transistor goes in the snapback. The failure node is exhibited in the input protection structures used in an MOS circuit. The incidence of the failure mode increased with increasing grading of the source-drain junction. (i.e., the Idcrit decreased as the junction grading increased). The ESD breakdown of the inputs are also shown to be a direct result of this failure mode
29 citations
IBM1
TL;DR: In this article, the behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined and a sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
Abstract: The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
5 citations