Showing papers on "Snapback published in 1986"
TL;DR: In this paper, a hot-hole injection in the snapback regime for memory erasure is described, which does not require a high-cost quartz lid or a special device structure.
Abstract: Electrical erasure of in-system memory chips has always been a desire for circuit operation. A novel technique which utilizes hot-hole injection in the snapback regime for memory erasure is described. This operation does not require a high-cost quartz lid or a special device structure. Although endurance characteristics are limited by channel hot-carrier-induced degradation, hundreds of WRITE and ERASE cycles can be easily achieved.
8 citations