Showing papers on "Snapback published in 1987"
TL;DR: In this article, the authors analyzed the asymptotic behavior at ligament tearing based on St.-Venant's principle and showed that when the ligament transmits a force (mode I, II or III), its final tearing is always characterized by snapback instability, which determines maximum possible displacement due to crack.
37 citations
IBM1
TL;DR: In this article, the behavior of channel avalanche breakdown in n-MOSFET's miniaturized by isothermal constant field scaling is examined and a sublinear dependence of snapback and sustaining voltages on channel length is found and explained.
Abstract: The behavior of channel avalanche breakdown in n-MOSFET's miniaturized by isothermal constant field scaling is examined. Both a first-order analytical estimate and a rigorous two-dimensional numerical simulation of electrically wide devices are used to understand the scaling of channel breakdown. A sublinear dependence of snapback and sustaining voltages on channel length is found and explained. In practical terms, this sublinear dependence means that the relative MOS channel breakdown behavior improves for scaled-down devices. The breakdown behavior was verified against experimental data taken on a 1.3-µm n-channel device. In addition, a model is proposed for channel breakdown on unscaled devices that differ only in channel length.
27 citations
01 Jan 1987
TL;DR: In this article, the Lightly Doped Drain (LDD) is shown to be more promising than the Graded Source/Drain (GSD) in avoiding these asymmetrical high-field effects at submicron dimensions.
Abstract: Nonzero implantation tilt angles are shown to cause an asymmetry in high-field effects, such as bipolar snapback and hot carrier injection, even when adequate source/drain overlap is achieved. This effect can cause large variations in a MOSFET's reliability, depending on its orientation and location within the wafer. Based on two-dimensional process and device simulations, it is shown that the Lightly Doped Drain (LDD) is more promising than the Graded Source/Drain (GSD) in avoiding these asymmetrical high-field effects at submicron dimensions. Guidelines are presented for the design of an optimized LDD structure, and substrate current is proposed as the best monitor for asymmetries in source/drain profiles.
6 citations