Snapback

About: Snapback is a research topic. Over the lifetime, 742 publications have been published within this topic receiving 8225 citations.

Accessing phase change memories

Abstract: A memory (100) may include a phase change memory element (130) and series connected first (125) and second (120) selection devices. The second selection device (120) may have a higher resistance and a larger threshold voltage than the first selection device (125). In one embodiment, the first selection device may have a threshold voltage substantially equal to its holding voltage. In some embodiments, the selection devices (120, 125) and the memory element (130) may be made of chalcogenide. In some embodiments, the selection devices (120, 125) may be made of non-programmable chalcogenide. The selection device with the higher threshold voltage may contribute lower leakage to the combination, but may also exhibit increased snapback. This increased snapback may be counteracted by the selection device with the lower threshold voltage, resulting in a combination with low leakage and high performance in some embodiments.

A new way to alleviate the RC IGBT snapback phenomenon: The Super Junction solution

Abstract: In this paper we present a new device, the 3.3kV semi-SuperJunction Reverse Conducting Insulated Gate Bipolar Transistor that can help to alleviate the voltage snapback of the Reverse Conducting IGBT while we achieve significant improvement in the on-state vs switching trade-off performance of the IGBT. The introduction of the SuperJunction structure in the drift region of the RC IGBT reduces the effective on-state resistance under unipolar current conduction. This ultimately affects the voltage snapback value as well as the reverse recovery of the diode while turn off.

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

Abstract: A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with an automatically controlled anode gate, named AG-RC-IGBT, is proposed in this paper, wherein a gate on the reverse IGBT is intrinsically off in the forward conduction state and can be automatically turned on in the reverse conduction state. Therefore, bidirectional conduction capability with snapback-free characteristics is achieved in the novel RC-IGBT. Depending on the parameters set on the reverse IGBT, its operation mode can be either like an antiparallel IGBT or like an antiparallel MOS-controlled thyristor (MCT). The antiparallel MCT mode can yield low snapback current densities and low on-state voltages in both forward and reverse conductions. Two-dimensional numerical simulations show that snapback-free characteristics are obtained in the AG-RC-IGBT antiparallel with an IGBT by a 15-μm-wide half-pitch in both forward and reverse conduction states. The antiparallel MCT mode achieves low on-state voltages of 0.97 and 1.6 V at the current density of 200 A/cm2 in reverse and forward conduction states, respectively.

A simplified model of short-channel MOSFET characteristics in the breakdown mode

Abstract: When a short-channel MOSFET is driven into the avalanche-induced breakdown region, the drain current increases rapidly and usually shows a snapback characteristic. Both the substrate current and the current collected by a nearby reverse-biased p-n junction also increases with increasing drain current in this region of operation. All of these effects are associated with minority-carrier injection from the source junction into the substrate. A model for the drain I-V characteristics is proposed. Also presented is a related model incorporating conductivity modulation that predicts linear relationships between the substrate and the collection currents and the drain current in this region of operation. Experimental results agree well with the models.