Topic
Snapback
About: Snapback is a research topic. Over the lifetime, 742 publications have been published within this topic receiving 8225 citations.
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TL;DR: In this article, a piecewise-linear model with transient relaxation (PWL-TR) is proposed to describe the nonlinear transient characteristics of EDS protection devices and circuits.
Abstract: This work presents a new type of model, i.e., piecewise-linear model with transient relaxation (PWL-TR), to describe the nonlinear transient characteristics of electrostatic discharge (ESD) protection devices and circuits. The PWL-TR model represents the device as a finite-state machine; hence, no proprietary information is disclosed. The PWL-TR model offers accuracy comparable to a compact model but enables more computationally efficient simulation.
14 citations
Proceedings Article•
01 Sep 2003TL;DR: In this paper, the authors showed that ESD discharges can cause both latent and permanent damages in interconnect structures, which can reduce the electromigration lifetime of metal structures by more than a factor 100.
Abstract: Interconnect forms a part of all ESD protection networks. ESD discharges can cause both latent and permanent damages in interconnect structures. ESD discharges, that barely affect the resistance of a structure, can reduce the electromigration lifetime of metal structures by more than a factor 100. Also snapback behavior, which limits the ESD robustness of silicon based interconnect structures, is observed. With this knowledge designs can be optimized for area and robustness.
14 citations
TL;DR: In this article, the reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed to achieve bidirectional conduction capability with no snapback and the turnoff speed can be improved.
Abstract: A novel structure of the reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed. The structure is connected anti-parallel with a PNP and an NPN transistor, which are in a collector-base short-circuited configuration. Bidirectional conduction capability with no snapback can be obtained by this structure and the turnoff speed can be much improved. The structure can work in two different modes in a reverse-conducting state: a diode mode and a thyristor mode. Two-dimensional numerical simulation results show that the novel RC-IGBT reduces the turnoff loss ( E off ) by 26.4 and 37.7% for the thyristor mode and the diode mode, respectively, and has no current non-uniformity compared with the conventional RC-IGBT.
14 citations
TL;DR: A reverseconducting insulated-gate bipolar transistor (RC-IGBT) with floating P-region (P-float) embedded in the n-buffer layer is proposed in this article.
14 citations
01 Jan 2004
TL;DR: In this article, a multilevel TLP (MTLP) approach was proposed to yield accurate and comprehensive snapback IV measurements unlike in the conventional TLP testing methodology with different system impedances.
Abstract: A novel TLP testing approach, multilevel TLP (MTLP), is described, which can yield accurate and comprehensive snapback IV measurements unlike in the conventional TLP testing methodology with different system impedances. The experimental validity of the MTLP methodology and setup are demonstrated with measurement results from different snapback devices.
14 citations