Topic
Snapback
About: Snapback is a research topic. Over the lifetime, 742 publications have been published within this topic receiving 8225 citations.
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TL;DR: In this paper, the authors investigated the snapback phenomena of the new adding adaptive layers in the source/drain ends of an nLDMOS and showed that the right-shifting characteristic of I-V curves depends on new adding Pad, LPad, Nad, and LNad parameters.
Abstract: Reliability issues are very important especially for the high-voltage (HV) devices. Unfortunately, an HV nLDMOS is often damaged by a latch-up (LU) problem when it triggered by a transient noise and a bias condition VDDmax is greater than that of the device holding-voltage (Vh). The snapback phenomena of the new adding adaptive layers in the source/drain ends of an nLDMOS are investigated in this paper. It is a novel method to reduce the surface field, control the trigger voltage and holding voltage. Experimentally, the right-shifting characteristic of snapback I-V curves depends on new adding Pad, LPad, Nad, and LNad parameters, respectively. Eventually, these source/drain adaptive layers of an nLDMOS can effectively improve the LU immunity under an HV operation.
5 citations
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26 Jun 2007TL;DR: In this paper, a DC model for ESD NMOS is provided, which includes a MOS transistor extracted from BSIM 3V3, a bipolar transistor for parasitic effect, substrate resistance and series resistance.
Abstract: A study has been done on the snapback and parasitic bipolar action for modeling ESD NMOS in this paper. A DC model for ESD NMOS is provided, which includes a MOS transistor extracted from BSIM 3V3, a bipolar transistor for parasitic effect, substrate resistance and series resistance. Equations for modeling the high current behavior of NMOS transistor have been developed. Extraction methodology for obtaining the bipolar parameters is given. Simulation results are presented and compared to the testing data for 0.6 um NMOS.
5 citations
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15 Mar 2007TL;DR: In this article, a three-terminal snapback device is utilized with a control circuit to provide a low snapback voltage that is protected from non-ESD voltage spikes and ripples.
Abstract: A three-terminal snapback device is utilized with a control circuit to provide a low snapback voltage that is protected from non-ESD voltage spikes and ripples. In response to a fast edge, the control circuit lowers the snapback voltage, unless a status signal indicates that normal operating voltages are present, and raises the snapback voltage a predefined time later. If the fast edge represents an ESD pulse, SCR operation is initiated at the lowered snapback voltage. If the fast edge represents a power on sequence, the maximum voltage is less than the momentarily lowered snapback voltage and therefore insufficient to initiate SCR operation. Further, once normal operating voltages are present, the control circuit continuously maintains the raised snapback voltage so that a non-ESD voltage spike or ripple can not improperly turn on the snapback device.
5 citations
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IBM1
TL;DR: In this article, the behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined and a sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
Abstract: The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
5 citations
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02 Nov 2016
TL;DR: In this article, a binary channel LIGBT/RC-LIGBT device and a manufacturing method for suppressing the snapback phenomena of conventional LIGB devices, improving the performance of backward diodes and improving device stability and reliability.
Abstract: A binary channel RC-LIGBT device and a manufacturing method therefor are disclosed. The invention belongs to the field of power semiconductor integrated circuits and specifically relates to a reverse conducting-LIGBT/RC-LIGBT and a manufacturing method therefor that are used for suppressing snapback phenomena of a conventional RC-LIGBT device, improving characteristics of backward diodes and improving device stability and reliability. The RC-LIGBT device disclosed in the invention has a unilateral electric conduction path having binary channels, the unilateral electric conduction path is formed by introducing a composite structure at a collector electrode end of the device, impact exerted on conduction characteristics by an N type collecting zone can be completely shielded in a forward direction LIGBT work mode, the snapback phenomena can be completely eliminated, the RC-LIGBT device disclosed in the invention has the same low conduction voltage drop as the conventional LIGBT, device stability and reliability can be improved, two freewheel channels are provided at the collector electrode end in a backward diode freewheel work mode, freewheeling capacity of the RC-LIGBT device is optimized, and the RC-LIGBT device is enabled to have a small conduction voltage drop.
5 citations