Snapback

About: Snapback is a research topic. Over the lifetime, 742 publications have been published within this topic receiving 8225 citations.

Electrostatic discharge protection circuit and electronic device

Abstract: Embodiments of the invention provide an electrostatic discharge protection circuit and an electronic device. The electrostatic discharge protection circuit comprises a voltage detection unit, a phase inverting circuit, a snapback breakdown generation unit and a maintaining voltage control unit. The voltage detection unit outputs a control signal according to a voltage between a first power line and a second power line, wherein the first power line has an operation voltage. The phase inverting circuit is used for receiving the control signal and outputting a trigger voltage accordingly. The snapback breakdown generation unit includes a first transistor element. The maintaining voltage control unit includes a second transistor element for adjusting a maintaining element. If a change of the voltage between the first power line and the second power line is detected, the snapback breakdown generation unit and the maintaining control unit are triggered by the phase inverting circuit, and the maintaining voltage becomes higher than the operation voltage when a snapback breakdown is generated by the snapback breakdown generation unit.

Electrostatic discharge protecting equipment of connection pad and its method and structure

Abstract: The invention relates to a static discharge protective device of a bond pad, which comprises a regulating circuit, a snapback component and a control circuit. The regulating circuit comprises a silicon controlled rectifier coupled to the bond pad. The silicon controlled rectifier comprises a first diode. Under the circumstance of not utilizing the first diode, the snapback component is coupled tothe N pole of the first diode; under the circumstance of utilizing the first diode, the snapback component is coupled to the N pole of a second diode. The control circuit is coupled to the N pole of the first diode, under the mode of normal operation, the control circuit is used to provide a first voltage to the N pole of the first diode to lead the N pole of the first diode to collect a pluralityof charged carriers, and to lead the silicon controlled rectifier not to be turned on, under the mode of static discharge, the control circuit does not provide the first voltage to the N pole of thefirst diode to lead the N pole of the first diode not to collect the charged carriers.

Failure Mechanism of the Power-Clamp Device of Buck Converter during the Voltage Conversion

Abstract: In this paper, a new phenomenon for the buck converter during the voltage conversion is found. It occurs at the transient that the high side driver (HS-D) is turned off in the large swing period. In order to turn on to keep the inductor current flowing, the diode of low-side driver (LS-D) is forced to turn on. This is the conventional model. From the experiment result and T-CAD simulation, we find that two parasitic bipolar transistors (npn and pnp) of high side driver (HS-D) also can turn on. Then, part of the electrons injected from the npn bipolar flow outside the HS-D, and are collected by the power-clamp device to drive it into the snapback region. Since the power-clamp device is connected to the power supply, it cannot skip this state as it is triggered on. Eventually, the high current and high voltage induced high Joule-heating leads to the thermal runaway occurs at the power-clamp device.

SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) capable of restraining snapback effect

Abstract: The invention relates to the power semiconductor technology, in particular to an SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) capable of restraining a snapback effect An implementing method for the SA-LIGBT mainly includes that a metal resistor with a certain resistance value is generated between electrode contacts of a P-type collecting region and an N-type collecting region, and the resistance value of the metal resistor can be controlled by adjusting the area and the length of the metal resistor When a device is turned on forwardly, current IF flows through the metal resistor R and generates a voltage drop IFR on the metal resistor to generate voltage difference between the P-type collecting region and an N-type buffering layer, if the IFR is larger than a forward turn-on voltage drop of a PN junction, the PN junction is turned on forwardly and enters an IGBT (insulated gate bipolar transistor) working mode, and thus, the snapback effect is restrained effectively The SA-LIGBT has the advantages that capability of effectively restraining a snapback phenomenon without increasing technical complexity excessively, and other performance parameters of the SA-LIGBT cannot be affected

Design and analysis of an efficient high holding voltage SCR for ESD protection

Abstract: Silicon-Controlled Rectifier (SCR) is well known for its good robustness, but its deep Snapback makes it have a low holding voltage, it will bring a latch-up issue An improving silicon-controlled rectifier (DSCR) device with higher holding voltage and smaller area is proposed and fabricated in a 05 μΜ HV CDMOS process The 3D simulation results show that the DSCR has same working mechanism with SCR, and enlarging the D1 and D2 is effective to increase DSCR's holding voltage TLP test results show that enlarging D1 and D2 to 8 μm makes the DSCR's holding voltage from 24 V to 795 V without increasing layout area