Showing papers on "Spice published in 1983"

Power MOSFET dynamic large-signal model

Abstract: A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, for use in the analysis and design of switching circuits. The accuracy of the model is verified by the excellent correlation obtained between detailed simulated and measured switching characteristics on an experimental high-speed switching circuit.

Analysis of switched-capacitor networks using general- purpose circuit simulation programs

Abstract: This paper presents a method for the analysis of switched-capacitor (SC) networks in the frequency and time domains by the use of general-purpose circuit simulation programs such as SPICE. It is shown how the z -domain equivalent circuit can be modeled exactly in the continuous-time domain using the lossless transmission line element of the simulation program to implement the required one-port storage element (storistor). The resulting continuous-time equivalent circuit retains the sample-data characteristics of the SC networks and is not restricted to frequencies below the Nyquist rate. It is also shown that the transmission line element can be used to simulate the (\sin x)/x effect on the frequency response of the SC network due to the sample-and-hold process. Examples of the simulation of simple SC networks with and without op amps using SPICE are given.

Empirical model for gallium arsenide MESFETs

Abstract: The paper describes an accurate nonlinear model for GaAs MESFETs suitable for inclusion in general circuit simulation programs such as SPICE. To run efficiently, programs such as SPICE require simple models that can be described by as few parameters as possible, yet still meeting the accuracy criteria, and it is for this reason that an entirely empirical approach has been taken. The DC model for drain current is defined by seven parameters, with a further six defining the MES diode equations and the basic capacitance model. The model has been implemented in SPICE, and several characteristics are produced to indicate model accuracy.