Showing papers on "Spice published in 1989"
TL;DR: In this paper, a fully differential folded-cascode op. amp. is analyzed, and the results are presented in the form of design equations and procedures, where tradeoffs among such factors as bandwidth, gain, phase margin, bias currents, signal swing, slew rate, and power are evident.
Abstract: A fully differential folded-cascode op. amp. is analyzed, and the results are presented in the form of design equations and procedures. Tradeoffs among such factors as bandwidth, gain, phase margin, bias currents, signal swing, slew rate, and power are made evident. Closed-form expressions are developed, and a sequence of design steps is established. A graphical representation of the relationships among the gain, power, and phase margin for different capacitive loadings is presented to illustrate visually one form of design optimization. The results of SPICE simulations are shown to agree very well with the design equations presented. >
112 citations
TL;DR: In this paper, the influence of different MOS and bipolar device parameters on the switching speed of a BiCMOS buffer is studied by looking at the response of the inverter to a step input, using suitable approximations for the high-level injection effects in the bipolar transistor.
Abstract: The influence of different MOS and bipolar device parameters on the switching speed of a BiCMOS buffer is described. This influence is studied by looking at the response of a BiCMOS inverter to a step input. Using suitable approximations for the high-level injection effects in the bipolar transistor, mathematical approximations for the response are derived. The approximate responses are compared to those determined by SPICE simulations and the agreement is satisfactory. High-current effects in the bipolar transistor strongly affect the performance. The effects of different bipolar transistor parasitic resistors are investigated, and it is found that only the collector resistance is important. The influence of different emitter sizes on the delay time is studied, and it is shown that for a given area, there is one optimal size ratio for the MOS and bipolar transistors for which the delay is minimum. >
86 citations
08 May 1989
TL;DR: In this article, a circuit simulation technique is presented which permits the measurement of the average short-circuit power dissipation component in integrated circuits, which can be applied effectively to any complementary circuit structure, such as CMOS, that does not permit current flow (other than leakage current) during steady-state operation.
Abstract: A circuit simulation technique is presented which permits the measurement of the average short-circuit power dissipation component in integrated circuits. This technique is most appropriate for low-power circuit design and can be applied effectively to any complementary circuit structure, such as CMOS, that does not permit current flow (other than leakage current) during steady-state operation. Short-circuit power dissipation expressions are derived, and SPICE simulation results for a differently ratioed W/sub p//W/sub n/ circuit are shown. >
51 citations
TL;DR: In this article, a simple and straightforward method is proposed for simulating the transient and small-signal responses of open and closed-loop switch-mode DC-DC convenors, which relies on the substitution of the switched inductor, fundamental in the realisation of such systems, by an equivalent circuit which represents its average behaviour.
Abstract: A simple and straightforward method is proposed for simulating the transient and small-signal responses of open and closed-loop switch-mode DC-DC convenors. The topologyindependent method hinges on the substitution of the switched inductor, fundamental in the realisation of suchsystems, by an equivalent circuit which represents its average behaviour. This permits simulation by a general-purpose electronic circuit simulator such as SPICE. The proposed approach is demonstrated by presenting the simulation results of a boost convertor.
50 citations
01 Oct 1989
TL;DR: In this article, an example of the simulation of a closed-loop controlled electric drive that shows the feasibility of simulating this equipment by means of a general purpose electronic circuit analysis program is described.
Abstract: An example of the simulation of a closed loop controlled electric drive that shows the feasibility of simulating this equipment by means of a general purpose electronic circuit analysis program is described. A SPICE program is used owing to its well-known facility for simulating electronic circuits. Its application to the control of a switched reluctance drive is presented. A way to extend SPICE to the simulation of the electromechanical energy conversion and the drive control is also presented. A closed-loop speed control is considered, and the simulation results are validated by experimental tests executed on an industrial drive. >
43 citations
14 Aug 1989
TL;DR: Sspice, a symbolic SPICE circuit simulator, is described, and the program performs a symbolic AC analysis and menu options are available for evaluating second-order active RC circuits.
Abstract: Sspice, a symbolic SPICE circuit simulator, is described. Input files are in the SPICE format, and the program performs a symbolic AC analysis. In addition menu options are available for evaluating second-order active RC circuits. These include identifying and solving ideal filter formulas and approximating pole shift due to finite op-amp gain-bandwidth product. >
40 citations
13 Mar 1989
TL;DR: In this article, a discussion of modifications implemented in SPICE such that each device's operating temperature can be set independently by operating-point power dissipation and/or user input, and can vary during a transient analysis controlled by a user-defined parallel thermal network.
Abstract: Simulators based on the SPI CE program have one major limitation in that every device in a system must operate at the same temperature. A discussion is presented of modifications implemented in SPICE such that each device's operating temperature can be set independently by operating-point power dissipation and/or user input, and can vary during a transient analysis controlled by a user-defined parallel thermal network. The method used to describe the thermal system is an electrical analog. The temperature is characterized as voltage and the power as current. The thermal resistances and capacitances are represented with resistors and capacitors. The thermal network is then solved simultaneously with the electrical network using the same algorithms. >
38 citations
08 May 1989
TL;DR: In this article, a method for calculating power dissipation of digital CMOS circuits is presented, which is made during switch-level simulation and is thus based on the simulated activity in the circuit.
Abstract: A method for calculating power dissipation of digital CMOS circuits is presented. The estimate is made during switch-level simulation and is thus based on the simulated activity in the circuit. Dissipation from dynamic switching, the short-circuit component, and static currents are considered. The average power dissipation is overestimated by as little as 5-10% compared to SPICE results, if X-states and spikes can be avoided during the simulation. >
37 citations
01 Dec 1989
TL;DR: In this article, a computer program which generates statistics about circuit failures due to MOS oxide breakdown has been developed, CORS (Circuit Oxide Reliability Simulator), which predicts the probability of circuit failure as a function of operating time, temperature, power supply voltage, and input waveforms.
Abstract: A computer program which generates statistics about circuit failures due to MOS oxide breakdown has been developed The program, CORS (Circuit Oxide Reliability Simulator), predicts the probability of circuit failure as a function of operating time, temperature, power supply voltage, and input waveforms It consists of a preprocessor and postprocessor for SPICE CORS calculates the probability of failure by using the node voltages provided by SPICE and oxide defect statistics provided by the user The effect of burn-in on oxide reliability can also be simulated CORS is linked to a hot electron and an electromigration reliability simulator Simulation results are presented >
34 citations
TL;DR: In this paper, the authors compared the 1-D numerical solution to the current-continuity equation, 2-D device simulation (PISCES), and the quasistatic (QS) results.
Abstract: The long-channel MOSFET model is based on an approximate solution to the nonlinear current-continuity equation in the channel. The model includes the large-signal transient and the small-signal AC analyses, although only the transient model is reported here. Comparisons have been made between this model and the 1-D numerical solution to the current-continuity equation, 2-D device simulation (PISCES), and the quasistatic (QS) results. The channel-charge partitioning scheme in the charge-based QS models is shown to be inadequate for the fast transient. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives. For the slow signals (compared to the channel transit time), the nonquasistatic (NQS) model is reduced to the quasistatic 40/60 channel-charge partitioning scheme. The CPU time required for this model is about two to three times longer than that of conventional MOSFET models in SPICE. >
33 citations
TL;DR: A unified and computationally efficient SPICE model for accurate prediction of the I-V characteristics of small-geometry lightly doped drain (LDD) MOSFETs is described in this paper.
Abstract: A unified and computationally efficient SPICE model for accurate prediction of the I-V characteristics of small-geometry lightly doped drain (LDD) MOSFETs is described. It is based on the enhancement of the SPICE LEVEL3 MOS model and a novel parameter extraction method. It supports the design of both short-channel and narrow-gate-width LDD MOSFETs with any kind of channel or field implant. A semiempirical approach to the modeling of the threshold voltage of LDD MOSFETs, in which the small-geometry effect is implemented, is demonstrated. The model is applicable to LDD MOSFETs with effective channel lengths and channel widths down to the submicrometer range and nonuniformity doped substrate. An LDD device is considered to be an intrinsic MOSFET in series with two external resistors. These two resistors account for the drain-to-source series resistance effect and are functions of drain-source voltage in the linear device-operating region. In addition, automatic extraction of device parameters for SPICE built-in LDD MOSFET models has been developed. Comparisons between the measured and modeled threshold voltages and I-V characteristics show excellent agreement for a wide range of channel lengths, widths and biases. >
TL;DR: The author presents several novel applications of the SPICE circuit analysis computer program which should be of use to engineering students of various disciplines.
Abstract: The author presents several novel applications of the SPICE circuit analysis computer program which should be of use to engineering students of various disciplines. Attention is directed to an implementation of SPICE for the MS-DOS operating system environment, named PSPICE. Three specific examples are presented. The first example shows a method of simultaneously displayed several parametric solutions. The second example demonstrates a method in which PSPICE simulates an analog computer. The third example illustrates the solution to a nonlinear differential equation. >
15 May 1989
TL;DR: Modifications to the SPICE program that allow the simultaneous simulation of an electrical system and a thermal network are presented, showing temperature-gradient-induced nonlinearity in an operational amplifier and operation of a thermal shutdown system.
Abstract: A discussion is presented of modifications to the SPICE program that allow the simultaneous simulation of an electrical system and a thermal network. By implicitly defining each device's parameter in terms of instantaneous junction temperature, accurate analyses can be obtained of systems that include significant thermal response. Examples that show temperature-gradient-induced nonlinearity in an operational amplifier and operation of a thermal shutdown system are included
26 Jun 1989
TL;DR: In this article, the authors present a set of formulas which describe the small-signal response of current-programmed power converters in the discontinuous-conduction mode.
Abstract: Computer-aided design of a switching power converter is benefited by the use of a model which runs on SPICE, and which simulates the DC, small-signal AC, and transient response of both the continuous-conduction mode and the discontinuous-conduction mode. This study presents such modes for the three basic types of converters (buck, boost, and buck-boost) in both the duty-cycle-programmed and the current-programmed variety. A set of formulas is presented which describe the small-signal response of current-programmed power converters in the discontinuous-conduction mode. >
Book•
01 Jan 1989
TL;DR: DC Analysis of Linear Networks Solution of Simultaneous Linear Algebraic Equations DC Analysis of Non-Linear Circuits Transient analysis of Linear and Non- linearly Circuits Models for Common Semiconductor Devices Implementation and Use of a General Purpose Circuit Analysis Program Like SPICE Logic Simulation Relaxation Based Method for Transient Analysis Sensitivity and Optimization.
Abstract: DC Analysis of Linear Networks Solution of Simultaneous Linear Algebraic Equations DC Analysis of Non-Linear Circuits Transient Analysis of Linear and Non-Linear Circuits Models for Common Semiconductor Devices Implementation and Use of a General Purpose Circuit Analysis Program Like SPICE Logic Simulation Relaxation Based Method for Transient Analysis Sensitivity and Optimization.
13 Mar 1989
TL;DR: A parameter optimization program is presented which uses the eigenvalue decomposition of the correlation matrix to support the development of improved MOS models and extraction strategies.
Abstract: Mixed analog and digital circuit simulation with SPICE requires enhanced parameter extraction strategies and accurate models. A parameter optimization program is presented which uses the eigenvalue decomposition of the correlation matrix to support the development of improved MOS models and extraction strategies. The computational efficiency and increased accuracy of an enhanced SPICE MOS2 model for analog applications is shown. >
TL;DR: A MESFET model has been presented in a form suitable for implementation in a circuit analysis program such as SPICE and accurately predicts I/sub DS/ and its partial derivatives over all terminal voltages from DC to several gigahertz.
Abstract: A MESFET model has been presented in a form suitable for implementation in a circuit analysis program such as SPICE. This model accurately predicts I/sub DS/ and its partial derivatives over all terminal voltages from DC to several gigahertz. The nonlinear capacitances C/sub GS/ and C/sub GD/ are also included in the model. Secondary effects often ignored in other models have been included by adding additional terms and parameters to the equations. >
TL;DR: In this paper, the application of SPICE to a rail traction network for the simulation of electromagnetic noise emissions and cab signal interference in a DC-fed rail rapid transit system is described.
Abstract: The application of SPICE to a rail traction network for the simulation of electromagnetic noise emissions and cab signal interference in a DC-fed rail rapid transit system is described. The predictions are validated by a laboratory experiment in which real-time signals are generated by computer using a programmable read-only memory (PROM) lookup table. The simulator can be used to study interference in rail rapid transit systems at low and audio frequencies produced by the combined effects of conduction, magnetic induction, and electric induction. Its use permits the influence of such variables as train position, power demand, and traction duty cycle on interference in cab signaling, track circuit, and other critical noise receivers to be determined. The effect of varying simulation parameters-for example, track impedance-can also be evaluated and parameters strongly influencing the degree of interference identified. The method can also be used to evaluate interference characteristics of new propulsion drives. >
01 Jan 1989
TL;DR: In this article, high-frequency SPICE models were developed to simulate the hysteresis and saturation effects of toroidal-ferrite-core inductors and transformers.
Abstract: High-frequency SPICE models were developed to simulate the hysteresis and saturation effects of toroidal-ferrite-core inductors and transformers. The models include the nonlinear, multivalued B-H characteristic of the core material, leakage flux, stray capacitances, and core losses. The saturation effects were modeled using two-diode clamping arrangements in conjunction with nonlinear sources. Two possible controlling schemes were developed for the saturation switch. One of the arrangements used the current flowing through a series RC branch to control the switch, and the other used a NAND gate. The NAND-gate implementation of the switch proved to be simpler, and the parameters associated with it were easier to determine from the measurements and the B-H characteristics of the material. Lumped parameters were used to simulate the parasitic effects. Techniques for measuring these parasitics are described. The models were verified using manganese-zinc-ferrite-type toroidal cores, and they have general applicability to all circuit analysis codes provided that they contain nonlinear sources or equivalent function blocks such as multipliers, adders, and logic components. >
TL;DR: Good experimental agreement shows that scattering parameters of wide MOSFET devices can be modeled appropriately by multisection RC ladders, especially T-ladder circuits.
Abstract: Scattering parameters of wide MOSFET devices have been measured at the wafer level in the frequency range up to 1 GHz. These scattering parameters are converted to Y-parameters for device characterization and compared with SPICE simulations of L-, Pi -, and T-ladder distributed RC circuits taking into account the effect of distributed gates. Good experimental agreement shows that this effect can be modeled appropriately by multisection RC ladders, especially T-ladder circuits. Differences among ladder circuits in modeling this effect are discussed qualitatively. >
26 Jun 1989
TL;DR: Two techniques for time-domain analysis, cycle-by-cycle simulation of switched linear circuits and state-space averaging, are discussed in the context of modeling computer power systems by studying the output voltage response of a single DC-to-DC power converter to a transient load.
Abstract: Two techniques for time-domain analysis, cycle-by-cycle simulation of switched linear circuits and state-space averaging, are discussed in the context of modeling computer power systems. These techniques are compared by studying the output voltage response of a single DC-to-DC power converter to a transient load. Measured data are used to validate the simulated results. Simulation CPU times are also presented along with a discussion on the pros and cons of each approach. Predicting the response to line and load transients of a much larger system composed of three paralleled DC-to-DC converters is studied using state-space averaged models implemented in SPICE. >
TL;DR: In this article, the authors describe a new analytic model for both the currentvoltage and capacitance-voltage characteristics of amorphous-silicon thin-film transistors.
Abstract: In this paper we describe a new analytic model for both the current-voltage and capacitance-voltage characteristics of amorphous-silicon thin-film transistors. This analytic model has been incorporated into a circuit simulation program (SPICE) to provide an accurate comprehensive three terminal model for amorphous-silicon thin-film transistors. We present results showing good agreement between circuit simulations based on this new device model and experimental data. The development of amorphous silicon SPICE simulation tools increases the design accuracy of advanced analog and digital circuits.
TL;DR: Six nonlinear SPICE elements are developed, allowing simplified modeling of most commonly encountered physiologic processes, and adders, multipliers, powers, inverse, and derivative functions are described.
Proceedings Article•
01 May 1989
TL;DR: In this paper, the effect of various MOSFET parameters on the rise and full-time power and power losses during turn-on and turn-off was presented. But, the SPICE simulation program is applied to determine peak power and energy losses.
Abstract: This paper presents the effect of various MOSFET parameters on the rise and full time. The SPICE simulation program is applied to determine peak power and power losses during turn-on ami turn-off. The resul t shows that SPICE program can be effectively used to evnlunie the rise and fall time ns well as various switching losses
26 Jun 1989
TL;DR: In this article, the effects of dv/dt, di/dt and temperature in thyristors are modeled and the device ratings with respect to these characteristics are made programmable in addition to two other programmable parameters: reverse recovery time and on-resistance.
Abstract: The effects of dv/dt, di/dt, and temperature in thyristors are modeled. The device ratings with respect to these characteristics are made programmable in addition to two other programmable parameters: reverse recovery time and on-resistance. The I-G SPICE IV/G6 software is used to perform modeling, analysis, and simulation of thyristor circuits with devices characterized by these five parameters. >
TL;DR: An environment for SPICE called NECTAR has been developed which aids in convergence and user-interface problems with SPICE by simulating the actions taken by expert users by identifying patterns which cause nonconvergence.
Abstract: An environment for SPICE called NECTAR has been developed which aids in convergence and user-interface problems with SPICE by simulating the actions taken by expert users. NECTAR recognizes patterns which cause nonconvergence and provides ways around the problems. NECTAR identifies errors in the SPICE input file and may automatically correct them. It can be used as a circuit design aid and improves the user interface for SPICE simulations. NECTAR belongs to the class of knowledge-based systems and is based on knowledge acquired from expert SPICE users and circuit designers. >