Showing papers on "Spice published in 1998"
17 May 1998
TL;DR: In this article, the authors implemented models of power semiconductor devices in the circuit simulator PSpice and obtained high accuracy and validity in a wide operation range due to the derivation from device physics.
Abstract: Models of power semiconductor devices are implemented in the circuit simulator PSpice. The combination of subcircuits and mathematical functions enables very compact solutions. High accuracy and validity in a wide operation range are obtained due to the derivation from device physics. Models of the power diode and the IGBT are presented as examples.
105 citations
TL;DR: THERMODEL as mentioned in this paper is a software tool which generates compact thermal models to describe the heat conduction of three-dimensional physical structures, from either the time-domain or the frequency-domain response of the given structure.
82 citations
26 Oct 1998
TL;DR: In this article, a recipe has been developed to model the skin effect for various transmission line structures and the final circuit structure to model this effect can be used with a generic SPICE circuit simulator.
Abstract: A recipe has been developed to model the skin effect for various transmission line structures. The final circuit structure to model this effect can be used with a generic SPICE circuit simulator. The ladder-like network (Yen et al, 1982) element is fairly easy to compute, and requires a minimal increase in CPU time. The model has been verified experimentally.
62 citations
TL;DR: A simple nonquasi static model, which offers good accuracy needed for circuit simulation, and a new curve fitting method for the extraction of the network model elements are reported, which focuses on extracting the elements of an equivalent circuit which describes the state-of-the-art device.
Abstract: As the effective gate-length of a MOSFET reduces, its high-frequency characteristics improve. However, they become more difficult to model. Current SPICE models are based on DC measurement data and simplistic capacitance models which can only approximate the high-frequency device characteristics up to a fraction of the device unity current gain frequency (f/sub /spl tau//). Thus, it is important to investigate the high-frequency characteristics and then incorporate the small-signal equivalent circuit parameters in SPICE. In this, work we report a simple nonquasi static model, which offers good accuracy needed for circuit simulation, and a new curve fitting method for the extraction of the network model elements. The current work is part of a study aimed at improving the existing scalable model for MOSFET's, and it focuses on extracting the elements of an equivalent circuit which describes the state-of-the-art device.
56 citations
31 May 1998
TL;DR: A novel principle of simple capacitance multipliers is proposed, by which it is possible to obtain higher capacitive values, and SPICE simulations, which are in a close agreement with the analytical calculations.
Abstract: One of the most limiting problems in the design of integrated circuits is constituted by the realization of high valued capacitors, who have the heavy drawback of high occupation of silicon area. Moreover, in some sensor applications, it can be useful to deal with capacitance values higher than those normally given by capacitive sensors. In these cases, the use of capacitance multipliers can be very important. In this paper, we propose a novel principle of simple capacitance multipliers, by which it is possible to obtain higher capacitive values. Two solutions, the first using one CCII- with current gain and the second using two conventional CCIIs, are presented and analyzed. The effects of CCII non-idealities are also evaluated and discussed. Finally, SPICE simulations, which are in a close agreement with the analytical calculations, are also reported.
53 citations
TL;DR: In this article, a three-phase dc-to-dc LCC-type resonant converter with high-frequency transformer isolation is proposed and the operation and a simple analysis of the converter are presented.
Abstract: A three-phase dc-to-dc LCC-type resonant converter with high-frequency transformer isolation is proposed. The operation and a simple analysis of the converter are presented. Design curves are obtained and a design example is given. SPICE simulation and experimental results are presented to verify the performance of the proposed converter for varying load conditions. The converter proposed has several advantages, e.g., operation in lagging PF mode for the entire load range, requires a narrow variation required in switching frequency, reduced component size and stresses, etc.
51 citations
TL;DR: A circuit simulation of SRM using SPICE, which can simulate voltages, currents, torque and rotation speed of the SRM is designed.
Abstract: A method for calculating the dynamic characteristics of switched reluctance motor (SRM) has been proposed. The inductance model of SRM that is changed following the rotor position can be estimated from FEM analysis. Based on the model, we design a circuit simulation of SRM using SPICE, which can simulate voltages, currents, torque and rotation speed of the SRM.
41 citations
TL;DR: In this article, a simple current-mode analogue multiplier/divider circuit using only two second-generation current-controlled current-conveyors is presented, which can perform multiplication and division without changing its topology.
Abstract: A simple current-mode analogue multiplier/divider circuit using only two secondgeneration current-controlled current-conveyors is presented. No resistors, no capacitors and no MOS transistors are required. The circuit can perform multiplication and division without changing its topology. Results obtained using SPICE simulation are included.
40 citations
TL;DR: In this paper, an ion-sensitive field-effect transistor (ISFET) model has been implemented into a modified version of SPICE and the effects of temperature on the device behaviour over a user-defined range of pH and temperature have been simulated.
Abstract: Temperature effects on ion-sensitive field-effect transistor (ISFETs) are investigated both from theoretical and experimental point of view. An ISFET model has been implemented into a modified version of SPICE and the effects of temperature on the device behaviour over a user-defined range of pH and temperature have been simulated. The simulated and measured results are then compared and discussed.
38 citations
TL;DR: In this article, a nonlinear MOSFET model based on S-parameter measurements over a large bias range has been implemented in a SPICE simulator, and it has been shown that the model shows good agreement between measured and simulated Sparameters of single transistors at various bias points up to 10 GHz.
Abstract: As the gate lengths of silicon MOSFET's become smaller and smaller, these devices are usable to frequencies in the gigahertz range. The nonlinear MOSFET model presented in this paper is based on S-parameter measurements over a large bias range, and has been implemented in a SPICE simulator. The improvements consist of new equations for the nonlinear capacitances and output conductance of the MOS transistor. This new large-signal model shows very good agreement between measured and simulated S-parameters of single transistors at various bias points up to 10 GHz. Intermodulation (IM) and circuit performance are also well predicted. Simulated S-parameters of a simple amplifier showed excellent agreement with measured results, confirming the performance of this model.
37 citations
18 Oct 1998
TL;DR: A switch-level simulation-based method for estimating quiescent current values using SPICE simulation results on a variety of circuits to both calibrate the simulator, and to demonstrate state, time and sequence dependencies of circuits.
Abstract: This paper presents a switch-level simulation-based method for estimating quiescent current values. The simulator identifies transistors that are in the proper state to experience leakage mechanisms. This information is combined with data about both the size of these transistors and various process parameters in order to calculate the actual I/sub DDQ/ value. SPICE simulation results are presented on a variety of circuits to both calibrate the simulator, and to demonstrate state, time and sequence dependencies of circuits. Some preliminary results are also given for an actual production chip.
24 Apr 1998
TL;DR: In this paper, the authors investigate the substrate noise coupling in the mixed-signal IC and its effect on the analog/digital circuits and develop a proper simulation technique for mixed-Signal circuits in SPICE, operating at high speeds and high frequencies.
Abstract: In this paper, we investigate the substrate noise coupling in the mixed-signal IC and its effect on the analog/digital circuits. A proper simulation technique for mixed-signal circuits in SPICE, operating at high speeds and high frequencies, is developed.
TL;DR: In this article, the authors describe a SPICE compatible subcircuit model of a lateral pnp transistor, which was fabricated in a 0.6 /spl mu/m CMOS process.
Abstract: This paper describes a SPICE compatible subcircuit model of a lateral pnp transistor, which was fabricated in a 0.6 /spl mu/m CMOS process. The extraction of a dc parameter set for the lateral device is more complicated than for a vertical device because of the presence of two parasitic vertical bipolar transistors which are formed by the emitter/collector, the base and the substrate regions. The SPICE Gummel-Poon model does not predict the substrate current accurately. This paper proposes a method which involves the use of a subcircuit incorporating three SPICE Gummel-Poon models [representing one lateral and two parasitic vertical bipolar junction transistors (BJT's)]. The development of this model, its implementation and the results obtained are outlined and discussed. This circuit model is SPICE compatible and can thus be used in commercial simulators. The model provides good agreement over a wide range of measured dc data including substrate current prediction.
TL;DR: In this article, a rate equation model for static and dynamic behavior of 1.55 /spl mu/m InGaAsP multiquantum-well (MQW) semiconductor lasers has been developed.
Abstract: A rate equation model for static and dynamic behavior of 1.55 /spl mu/m InGaAsP multiquantum-well (MQW) semiconductor lasers has been developed. A three level scheme for the rate equations has been chosen in order to model carrier transport effects. The introduction of quasi-two dimensional (quasi-2-D) gateway states between unbound and confined states has been used to calculate, for each well independently, carrier density and gain, allowing to take nonuniform injection into account. Starting from the formal identity between a rate equation and a Kirchoff current balance equation at a capacitor node, the model has been implemented on a SPICE circuit emulator, SPICE has granted an easy handling of parasitics and opens the possibility of integration with electrical components. The model's parameters have been directly derived from a complete set of measurements on real devices. Thanks to this characterization and the model accuracy, we have obtained good agreement between simulations and experimental data. The model was finally used to improve both static and dynamic properties of MQW devices. Based on this optimization, compressive strained InGaAsP-InP MQW Fabry-Perot lasers were realized, achieving low threshold current, high efficiency, and more than 10 GHz of direct modulation bandwidth.
TL;DR: In this article, six tunable sinusoidal oscillator topologies, two of them known from the literature, are proposed using only CMOS operational transconductance amplifiers (OTAs) and grounded capacitors.
Abstract: In this study, six tunable sinusoidal oscillator topologies, two of them known from the literature, are proposed using only CMOS operational transconductance amplifiers (OTAs) and grounded capacitors. The oscillator configurations have the properties of oscillation frequency control using the transconductance gain without affecting the oscillation condition, the suitability for very large scale integration (VLSI) since they are composed of only OTAs and grounded capacitors, and the capability of operation at high frequency. For the proposed topologies, the non-ideality effects of an OTA such as finite output conductance, and finite bandwidth are investigated, and for one of the proposed OTA-C oscillator circuits the maximum output signal level is determined using a simple formula that does not cause clipping and the slew-rate-limiting problem. The theoretical results are verified by SPICE simulation results. The oscillator topologies are simulated with the SPICE computer program and the resulting output v...
Journal Article•
TL;DR: In this article, a frequency-domain simulator, Harmonic balance (HB), was used for analyzing the undesired IC behavior, especially the DC output shift under the large RF injection.
Abstract: RF noise immunity is becoming a serious problem for integrated circuits (ICs). We have found a frequency-domain simulator [harmonic balance (HB)] to be useful for analyzing the undesired IC behavior, especially the DC output shift under the large RF injection. The simulator has the following advantages in comparison with a conventional time-domain simulator such as SPICE: (1) DC output shifts can be simulated in a very short time using a conventional bipolar transistor model and (2) steady-state current or voltage waveforms at each node in an IC are directly and easily obtained. This paper describes the methods and results of the DC shifts analysis of a bipolar transistor or a differential amplifier using the HB simulator.
TL;DR: In this paper, a fully analytical model for the currentvoltage (I-V) characteristics of HEMT's is presented, which uses a polynomial expression to model the dependence of sheet carrier concentration (n/sub s/) in the 2-DEG on gate voltage (V/sub G/).
Abstract: A fully analytical model for the current-voltage (I-V) characteristics of HEMT's is presented. It uses a polynomial expression to model the dependence of sheet carrier concentration (n/sub s/) in the two-dimensional electron gas (2-DEG) on gate voltage (V/sub G/). The resultant I-V relationship incorporates a correction factor /spl alpha/ analogous to SPICE MOSFET Level 3 model and is therefore more accurate than models assuming a linear n/sub s/-V/sub G/ dependence leading to square law type I-V characteristics. The model shows excellent agreement with experimental data over a wide range of bias. Further, unlike other models using nonlinear n/sub s/-V/sub G/ dependence, it neither uses fitting parameters nor does it resort to iterative methods at any stage. It also includes the effects of the extrinsic source and drain resistances. Due to its simplicity and similarity in formulation to the SPICE MOSFET Level 3 model, it is ideally suited for circuit simulation purposes.
TL;DR: This configuration-oriented SPICE model is derived by decomposing the immittance matrices associated with an n coupled-line 2n-port system and provides an equivalent-circuit representation which is simple and topologically meaningful as compared to the model based on modal decomposition.
Abstract: A configuration-oriented SPICE model for multiple coupled lines in an inhomogeneous medium is presented in this paper. The circuit model consists of a network of uncoupled transmission lines and is readily modeled with simulation tools like LIBRA and SPICE, and provides an equivalent-circuit representation which is simple and topologically meaningful as compared to the model based on modal decomposition. This configuration-oriented model is derived by decomposing the immittance matrices associated with an n coupled-line 2n-port system. Time- and frequency-domain simulations of typical coupled-line multiports are included to exemplify the utility of the model. The model is useful for the simulation and design of general single and multilayer coupled-line components such as filters and couplers and investigation of signal integrity issues, including crosstalk in interconnects associated with high-speed digital- and mixed-signal electronic modules and packages.
15 Feb 1998
TL;DR: In this paper, the Gyrator Re-Cap core model was used for the analysis of flux paths as well as current paths and circuit duals and symbols were developed for all magnetic elements.
Abstract: SPICE technology is applied to the analysis of flux paths as well as current paths. Circuit duals and symbols are developed for all magnetic elements using the basic Gyrator Re-Cap core model. Magnetic circuits are created with these symbols to demonstrate the ease and accuracy of simulating all major magnetic phenomena. The following magnetic devices are modeled: forward and flyback transformers; coupled inductor/transformers; ferroresonant regulators; and magnetic amplifiers (with both current and voltage control).
15 Feb 1998
TL;DR: A new method of SPICE macromodeling of magnetic components, that considers both the magnetic saturation and hysteresis processes, as well as the self-heating electrothermal effects, using the analog behavioral modeling facilities of modern SPICE-like simulators.
Abstract: This paper presents a new method of SPICE macromodeling of magnetic components, that considers both the magnetic saturation and hysteresis processes, as well as the self-heating electrothermal effects. It uses the analog behavioral modeling facilities of modern SPICE-like simulators, that enable the description of a large number of nonlinear algebraic and differential equations by means of nonlinear controlled voltage and current sources. Thus, the electromagnetic and electrothermal laws are described with "in-line equation" controlled sources, that form an electrical equivalent circuit of the global magnetic-electrical-thermal behavior of the magnetic component. The B-H loop is piecewise-linear approximated and therefore any kind of magnetic material can be modeled. The temperature and frequency dependencies of the B-H loop are directly introduced in the macromodel with "look-up table" controlled sources. The resulting model is portable in all the modern SPICE simulators that support the ABM facilities, and it assures a higher accuracy and a better computational efficiency, with no convergence problems. The proposed behavioral macromodel was tested for several commercial magnetic cores, showing a good agreement with data sheets characteristics.
Proceedings Article•
01 Jan 1998TL;DR: In this article, an analytical model for circuit simulation to describe the thermal noise in MOSFErs was presented, which includes the influence of the increasing electrical field with downscaling on the electron equivalent noise temperature.
Abstract: An analytical model for circuit simulation to describe the thermal noise in MOSFErs -for all channel length down to deep submicron is presented. Contrary to the thermal equilibrium assumption, this model includes the influence of the increasing electrical field with downscaling on the electron (hole) equivalent noise temperature. If not taken into account simulation errors of up to one order of magnitude in the thermal noise of half micron transistors are possible.
TL;DR: In this paper, the total ionizing-dose-induced degradation of two switching power converters was examined, and the experimental results agree well with values obtained from SPICE simulations.
TL;DR: The purpose of this presentation was to show how CAD tools can be used through the Internet, and the SPICE Internet package (SIP) is just an example of using SPICE.
Abstract: The purpose of this presentation was to show how CAD tools can be used through the Internet, and the SPICE Internet package (SIP) is just an example of using SPICE. Several features make the SIP a desirable program for computer-aided engineering and design. Only one copy of the SPICE engine needs to be installed and configured. One machine acts as the server and other machines can simultaneously access the SPICE engine through network connections. Remote access to SIP allows users to run SPICE simulations from any computer on the network, whether it be from home or another office in another building or town. Also the current SPICE engine used is SPICE3f5 from Berkeley, which allows an unlimited number of transistors.
07 Jun 1998
TL;DR: In this article, a methodology for inclusion of MOSFET characteristics fluctuation into BSIM3v3 SPICE model is proposed, which allows not only statistical simulation based on electric test data that can be easily measured with a full-auto tester system, but also characteristics prediction of modified device structures or of future technology devices.
Abstract: A methodology for inclusion of MOSFET characteristics fluctuation into BSIM3v3 SPICE model is proposed. Fundamentally physical parameters such as gate oxide thickness (TOX), channel concentration (NCH), gate length (L), and parasitic resistance (RDSW) are chosen as an independent parameter set. Parameters which should be expressed by the above set are described in simple physical equations. This method allows not only statistical simulation based on electric test data that can be easily measured with a full-auto tester system, but also characteristics prediction of modified device structures or of future technology devices.
TL;DR: In this article, three different approaches to design continuous-time currentmode ladder filters using multiple output current integrators are presented, based on simulating node voltages, state variables, or loop currents of passive RLC ladder filter prototypes.
Abstract: Three different approaches to designing continuous-time current-mode ladder filters using multiple output current integrators are presented. These approaches are based on simulating node voltages, state variables, or loop currents of passive RLC ladder filter prototypes. Node voltage and state variable simulations yield more compact structures than that obtained using loop current simulation. Possible CMOS implementations are presented and their performance characteristics are investigated using SPICE simulations. Scaled filters, using the constant field scaling law, are found to operate properly at low supply voltages, down to 1.0V.
07 Jun 1998
TL;DR: In this paper, the impact of dishing in metal CMP processes on circuit performance is explored and the impact on power distribution networks and clock distribution networks, critical components in modern VLSI designs, is of specific interest.
Abstract: In this paper, we explore the impact of dishing in metal CMP processes on circuit performance. The impact on power distribution networks and clock distribution networks, critical components in modern VLSI designs, is of specific interest. For the two examples given in this paper, we find the impact to be very small.
TL;DR: In this paper, the design of a new current-mode A/D converter based on a modified successive-approximations model, in 1.2 /spl mu/m CMOS technology, is described.
Abstract: The authors report the design of a new current-mode A/D converter, based on a modified successive-approximations model, in 1.2 /spl mu/m CMOS technology. The proposed circuit is characterised by good accuracy and fast dynamic performance, low power consumption and small occupation area. SPICE simulations allow the design approach to be validated and the electrical performance of the ADC to be predicted.
IBM1
TL;DR: A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially available BiCMOS technology for high-frequency applications.
Abstract: A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE, DC and AC fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM's HBT technology that contribute to the scaleability of the technology are discussed.
06 Dec 1998
TL;DR: In this article, the authors describe the development of a SPICE sub-circuit model for an avalanche triggered SCR used for ESD protection, including extensive use of TCAD tools, which provides physical insight.
Abstract: This paper describes the development of a SPICE sub-circuit model for an avalanche triggered SCR used for ESD protection The approach for developing the model is presented, including the extensive use of TCAD tools, which provides physical insight This is the first SPICE model presented for an avalanche triggered SCR demonstrating accurate terminal behavior under both steady state and transient triggering conditions It is intended for use in a design environment for examining ESD circuit behavior at the chip level