Topic

# Spin-½

About: Spin-½ is a(n) research topic. Over the lifetime, 40423 publication(s) have been published within this topic receiving 796639 citation(s).

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TL;DR: The authors assess various approximate forms for the correlation energy per particle of the spin-polarized homogeneous electron gas that have frequently been used in applications of the local spin density a...

Abstract: We assess various approximate forms for the correlation energy per particle of the spin-polarized homogeneous electron gas that have frequently been used in applications of the local spin density a...

16,835 citations

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TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.

Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

8,325 citations

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TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.

Abstract: The interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films. This leads to a local increase of the Gilbert damping parameter which characterizes spin dynamics. When a dc current crosses this interface, stimulated emission of spin waves is predicted to take place. Beyond a certain critical current density, the spin damping becomes negative; a spontaneous precession of the magnetization is predicted to arise. This is the magnetic analog of the injection laser. An extra dc voltage appears across the interface, given by an expression similar to that for the Josephson voltage across a superconducting junction. \textcopyright{} 1996 The American Physical Society.

4,172 citations

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TL;DR: In this article, a spin dependent one-electron potential pertinent to ground state properties is obtained from calculations of the total energy per electron made with a 'bubble' (or random phase) type of dielectric function.

Abstract: The local density theory is developed by Hohenberg, Kohn and Sham is extended to the spin polarized case. A spin dependent one- electron potential pertinent to ground state properties is obtained from calculations of the total energy per electron made with a 'bubble' (or random phase) type of dielectric function. The potential is found to be well represented by an analytic expression corresponding to a shifted and rescaled spin dependent Slater potential. To test this potential the momentum dependent spin susceptibility of an electron gas is calculated. The results compare favourably with available information from other calculations and from experiment. The potential obtained in this paper should be useful for split band calculations of magnetic materials.

3,587 citations

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Microsoft

^{1}TL;DR: In this article, a condition for boundary Majorana fermions is expressed as a condition on the bulk electron spectrum, which is satisfied in the presence of an arbitrary small energy gap induced by proximity of a 3D p-wave superconductor.

Abstract: Certain one-dimensional Fermi systems have an energy gap in the bulk spectrum while boundary states are described by one Majorana operator per boundary point. A finite system of length L possesses two ground states with an energy difference proportional to exp(-L/l0) and different fermionic parities. Such systems can be used as qubits since they are intrinsically immune to decoherence. The property of a system to have boundary Majorana fermions is expressed as a condition on the bulk electron spectrum. The condition is satisfied in the presence of an arbitrary small energy gap induced by proximity of a three-dimensional p-wave superconductor, provided that the normal spectrum has an odd number of Fermi points in each half of the Brillouin zone (each spin component counts separately).

2,902 citations