Topic
Spin-½
About: Spin-½ is a research topic. Over the lifetime, 40423 publications have been published within this topic receiving 796639 citations.
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TL;DR: In this paper, the ground state of the d-dimensional Ising model with a transverse field is proven to be equivalent to the (d+ 1) -dimensional ising model at finite temperatures.
Abstract: The partition function of a quantal spin system is expressed by that of the Ising model, on the basis of the generalized Trotter formula. Thereby the ground state of the d-dimensional Ising model with a transverse field is proven to be equivalent to the (d+ 1) -dimensional Ising model at finite temperatures. A general relationship is established between the two partition functions of a general quantal spin system and the corresponding Ising model with many-spin interactions, which yields some rigorous results on quantum systems. Some applications are given.
875 citations
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TL;DR: In this paper, it was shown that spin polarized determinants for an antiferromagnetic transition metal dimer and spin projected states obtained from them contribute to the Heisenberg coupling constant J describing a ladder of spin states.
873 citations
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TL;DR: Bethe's hypothesis for the ground state of a one-dimensional cyclic chain of anisotropic nearest-neighbor spin-spin interactions was proved for any fixed number of down spins as mentioned in this paper.
Abstract: Bethe's hypothesis is proved for the ground state of a one-dimensional cyclic chain of anisotropic nearest-neighbor spin-spin interactions. The proof holds for any fixed number of down spins.
860 citations
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TL;DR: The experimentally realized coherent control of a single-electron spin in a quantum dot using an oscillating electric field generated by a local gate to establish the feasibility of fully electrical manipulation of spin qubits.
Abstract: Manipulation of single spins is essential for spin-based quantum information processing Electrical control instead of magnetic control is particularly appealing for this purpose, because electric fields are easy to generate locally on-chip We experimentally realized coherent control of a single-electron spin in a quantum dot using an oscillating electric field generated by a local gate The electric field induced coherent transitions (Rabi oscillations) between spin-up and spin-down with 90 degrees rotations as fast as approximately 55 nanoseconds Our analysis indicated that the electrically induced spin transitions were mediated by the spin-orbit interaction Taken together with the recently demonstrated coherent exchange of two neighboring spins, our results establish the feasibility of fully electrical manipulation of spin qubits
852 citations
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TL;DR: In this article, a room-temperature electrical injection and detection of spin currents and observed spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips.
Abstract: Finding a means to generate, control and use spin-polarized currents represents an important challenge for spin-based electronics, or `spintronics'. Spin currents and the associated phenomenon of spin accumulation can be realized by driving a current from a ferromagnetic electrode into a non-magnetic metal or semiconductor. This was first demonstrated over 15 years ago in a spin injection experiment on a single crystal aluminium bar at temperatures below 77 K. Recent experiments have demonstrated successful optical detection of spin injection in semiconductors, using either optical injection by circularly polarized light or electrical injection from a magnetic semiconductor. However, it has not been possible to achieve fully electrical spin injection and detection at room temperature. Here we report room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips. We anticipate that larger signals should be obtainable by optimizing the choice of materials and device geometry.
831 citations