Showing papers on "Spontaneous emission published in 1996"
TL;DR: In this paper, the authors investigated the emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures by means of modulation spectroscopy and assigned the static electroluminescence peak to recombination of excitons localized at certain potential minima in the quantum well.
Abstract: Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum‐confinement Stark effect and band filling of the localized states by excitons.
1,089 citations
TL;DR: Different couplings between a single ion trapped in a harmonic potential and an environment are designed and the variation of the laser frequencies and intensities allows one to design the coupling and select the master equation describing the motion of the ion.
Abstract: We show how to design different couplings between a single ion trapped in a harmonic potential and an environment. The coupling is due to the absorption of a laser photon and subsequent spontaneous emission. The variation of the laser frequencies and intensities allows one to ``engineer'' the coupling and select the master equation describing the motion of the ion.
615 citations
07 Jun 1996
TL;DR: An exact expression for the electromagnetic mode density, and hence the group velocity, is derived for a finite N period, one-dimensional photonic band-gap structure and applications to 3D structures, spontaneous emission control, delay lines, band-edge lasers, and superluminal tunneling times are discussed.
Abstract: Summary form only given. We derive an exact expression for the electromagnetic mode density, and hence the group velocity, for a finite N period, one-dimensional photonic band-gap structure. We begin by deriving a general formula for the mode density in terms of the complex transmission coefficient of an arbitrary index profile. Then we develop a formula that gives the N-period mode density in terms of the transmission coefficient of the unit cell. The special cases of mode-density enhancement and suppression at the photonic band edge and at mid gap, respectively are derived. The specific example of a quarter-wave stack is analyzed, and applications to 3D structures, spontaneous emission control, delay lines, band-edge lasers, and superluminal tunneling times are discussed.
519 citations
TL;DR: Calculations on light diffusion with amplification that can explain previous experiments on the spontaneous emission from such a medium and it is argued that one can distinguish three regimes depending on the amount of scattering.
Abstract: In this paper we present calculations on light diffusion with amplification that can explain previous experiments on the spontaneous emission from such a medium. Also we discuss the experimental considerations on realizing a medium that both multiply scatters and amplifies light. In an amplifying random medium different processes can occur. We argue that one can distinguish three regimes depending on the amount of scattering, and discuss these regimes in the context of random laser action. @S1063-651X~96!05109-4#
423 citations
TL;DR: In this paper, the authors used far-field microscopy to measure the room-temperature optical properties of single dye molecules located on a polymer-air interface, and found that the lifetime dependence on dipole orientation was a consequence of the electromagnetic boundary conditions on the fluorescent radiation at the polymer air interface.
Abstract: Far-field microscopy was used to noninvasively measure the room-temperature optical properties of single dye molecules located on a polymer-air interface. Shifts in the fluorescence spectrum, due to perturbation by the locally varying molecular environment, and the orientation of the transition dipole moment were correlated to variation in the excited-state lifetime. The lifetime dependence on spectral shift is argued to result from the frequency dependence of the spontaneous emission rate; the lifetime dependence on dipole orientation was found to be a consequence of the electromagnetic boundary conditions on the fluorescent radiation at the polymer-air interface.
416 citations
TL;DR: Quantum interference in spontaneous emission from a four-level atom is investigated and can lead to the elimination of a spectral line in the spontaneous emission spectrum and spontaneous emission cancellation in steady state.
Abstract: Quantum interference in spontaneous emission from a four-level atom is investigated. The atom has two upper levels coupled by the same vacuum modes to a common lower level and is driven by a coherent field to an auxiliary level. Interference can lead to the elimination of a spectral line in the spontaneous emission spectrum and spontaneous emission cancellation in steady state.
412 citations
IBM1
TL;DR: A laboratory realization of the gedanken experiment that Dicke used to introduce superradiance is reported, where two Ba/sup +/ ions are laser-cooled and crystallized in a microscopic Paul trap so that they come to rest 1.5 microns from each other.
Abstract: Summary form only given. We report a laboratory realization of the gedanken experiment that Dicke used to introduce superradiance. Two Ba/sup +/ ions are laser-cooled and crystallized in a microscopic Paul trap so that they come to rest 1.5 microns from each other. This is about 3 wavelengths of the 493 nm light used to laser cool the transition. Micromotion and residual thermal motion are low so that they are essentially stationary relative to 493 nm light.
401 citations
TL;DR: In this article, a theoretical analysis of the gain and threshold current of a semiconductor quantum dot (QD) laser is given which takes account of the line broadening caused by fluctuations in quantum dot sizes.
Abstract: Theoretical analysis of the gain and threshold current of a semiconductor quantum dot (QD) laser is given which takes account of the line broadening caused by fluctuations in quantum dot sizes. The following processes are taken into consideration together with the main process of radiative recombination of carriers in QDs: band-to-band radiative recombination of carriers in the waveguide region, carrier capture into QDs and thermally excited escape from QDs, photoexcitation of carriers from QDs to continuous-spectrum states. For an arbitrary QD size distribution, expressions for the threshold current density as a function of the root mean square of relative QD size fluctuations, total losses in the waveguide region, surface density of QDs and thickness of the waveguide region have been obtained in an explicit form. The minimum threshold current density and optimum parameters of the structure (surface density of QDs and thickness of the waveguide region) are calculated as universal functions of the main dimensionless parameter of the theory developed. This parameter is the ratio of the stimulated transition rate in QDs at the lasing threshold to the spontaneous transition rate in the waveguide region at the transparency threshold. Theoretical estimations presented in the paper confirm the possibility of a significant reduction of the threshold currents of QD lasers as compared with the conventional quantum well lasers.
287 citations
TL;DR: In this article, a GaAs/AlAs planar cavity containing a collection of InAs quantum boxes in its core region has been grown in a single step by molecular beam epitaxy, and processed by electron-beam lithography and reactive ion etching into pillar microresonators.
Abstract: A GaAs/AlAs planar cavity containing a collection of InAs quantum boxes in its core region has been grown in a single step by molecular beam epitaxy, and processed by electron‐beam lithography and reactive ion etching into pillar microresonators. The optical study by photoluminescence of these localized light emitters allows a systematic and precise determination of the energies of the first confined photon modes of such microstructures, in good agreement with theoretical estimates. More generally, such probes facilitate the experimental study of the modes of complex photonic microstructures and of the spontaneous emission alteration they entail on a quasimonochromatic light emitter.
285 citations
TL;DR: In this article, the casimir effect and radiative reaction in an optical cavity were discussed. But the authors did not consider the effect of the atom-photon interactions in the optical cavity.
Abstract: New aspects of the casimir effect - fluctuations and radiative reaction, G. Barton non-perturbative atom-photon interactions in an optical cavity, H.J. Carmichael et al single atom emission in an optical resonator, J.J. Childs et al one electron in a cavity, G. Gabrielse and J. Tan manipulation of non-classical field states in a cavity by atom interferometry, S. Haroche and J.M. Raimond perturbative cavity quantum electrodynamics, E.A. Hinds structure and dynamics in cavity quantum electrodynamics, H.J. Kimble spontaneous emission by moving atoms, P. Meystre and M. Wilkens quantum optics of driven atoms in coloured vacua, T.W. Mossberg and M. Lewenstein the micromaser - a proving ground for quantum physics, G. Raithel et al.
264 citations
TL;DR: It is shown that nonradiative energy back transfer from the excited Er $4f$ shell causes luminescence quenching below 200 K, and the decrease of emission intensity above 100 K is caused by an unidentified second back-transfer process.
Abstract: Recombination processes in rare-earth metals in semiconductors are a special case due to the localized nature of $f$ electrons. Our work explores in detail the radiative and nonradiative mechanisms of energy transfer for erbium in silicon by investigating the temperature dependence of the intensity and the decay time of the photoluminescence of Er-related centers in Si. We show that nonradiative energy back transfer from the excited Er $4f$ shell causes luminescence quenching below 200 K. We study electroluminescence decay by applying different bias conditions during the decay. In a two-beam experiment the photoluminescence decay is monitored for different background-excitation laser powers. Changes in the decay time are strong evidence of the impurity Auger effect as an efficient luminescence-quenching mechanism for Er in Si. A fast initial luminescence decay component at high pumping powers is related to quenching by excess carriers. The power dependence, the decay-time components, and the two-beam experiment are simulated by a set of rate equations which involve the formation of excitons, a decrease of the pumping efficiency by exciton Auger recombination, and a decrease of radiative efficiency by the impurity Auger effect with free electrons. As a nonradiative deexcitation path competing with spontaneous emission, the impurity Auger effect decreases the excited-state lifetime of Er in Si, and dominates the thermal quenching of luminescence in the temperature range from 4 to 100 K. We find that the decrease of emission intensity above 100 K is caused by an unidentified second back-transfer process.
TL;DR: In this article, it was shown that spontaneous emission of an atom placed in a dielectric is proportional to the local radiative density of states, which is only a part of the local density of the eigenmodes of the Maxwell equations.
Abstract: We show rigorously that the coefficient for spontaneous emission of an atom placed in a dielectric is proportional to the local radiative density of states—that is only a part of the local density of the eigenmodes of the Maxwell equations. Spontaneous emission is inhibited if the atom is located at a position where this local radiative density is small, even if the total density of states is not vanishing. This radiative density of states can be obtained without having to perform a full quantum calculation of the radiation-matter system. We demonstrate this principle by solving numerically a scalar model for a dielectric that consists of a lattice of resonating dipoles.
TL;DR: In this paper, it was shown explicitly how, at high power, both the laser field and the laser noise source become classical and that the increase in noise in lasers with open cavities is not due to enhanced spontaneous emission as once thought, but to single-pass amplification.
Abstract: The basic equations governing noise phenomena are derived from first principles and applied to examples in optical communications. Quantum noise arises from two sources, the momentum fluctuations of electrons at optical frequencies and the uncertainty-related fluctuations of the electromagnetic field. Shot noise results from the beating of the noise sources with the signal field. In high-gain amplifiers, the spontaneous-emission noise dominates shot noise and results in a noise figure of at least 3 dB. It is shown explicitly how, at high power, both the laser field and the laser noise source become classical. The increase in noise in lasers with open cavities is not due to enhanced spontaneous emission as once thought, but to single-pass amplification. The noise fields and spontaneous currents have Gaussian distributions, while nonlasing modes have exponential photon-number distributions. Low-frequency intensity fluctuations arise from the electric current driving the laser and can be sub-Poissonian, in contrast to shot noise, which has a Poissonian distribution. The calculational tools are a wave equation for the field operator and a rate equation for the carrier-number operator, each containing spontaneous current noise sources. The correlation functions of these sources are determined by the fluctuation-dissipation theorem. [S0034-6861(96)00503-X]
TL;DR: In this article, the authors derived analytical formulas for the enhancement of spontaneous emission along the optical axis of the cavity and established the design rules for high-efficiency operation of RCLEDs.
Abstract: Resonant-cavity light-emitting diodes (RCLED) are novel, high-efficiency light-emitting diodes which employ optical microcavities. These diodes have higher intensities and higher spectral purity as compared to conventional LEDs. Analytical formulas are derived for the enhancement of the spontaneous emission along the optical axis of the cavity. The design rules for high-efficiency operation of RCLEDs are established. The temperature dependence of the emission intensity is analyzed in the range 20-80/spl deg/ and it is described by an exponential dependence with a characteristic temperature of 112 K. The modulation characteristics of RCLEDs exhibit 3 dB frequencies of 580 MHz. Eye diagrams at transmission rates of 622 Mb/s are wide open indicating the suitability of RCLEDs for high-speed data transmission.
TL;DR: In this article, the authors performed time-resolved radiative recombination measurements on GaSb quantum dots and showed that photoluminescence decays with a fast and a slow component.
Abstract: Time‐resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs through a self‐assembly process. Time‐resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are much longer than the lifetimes of ordinary GaSb quantum wells with a straddling band lineup. These results support a staggered band lineup and space charge induced band‐bending model.
TL;DR: In this paper, the decay rate of an excited atom embedded in an absorbing dielectric is investigated. Decay can occur by spontaneous emission into transverse radiative modes of the electromagnetic field and by Joule heating via longitudinal coupling of the atom to the dielectrics.
Abstract: We present calculations of the rates of decay of an excited atom embedded in an absorbing dielectric. Decay can occur by spontaneous emission into transverse radiative modes of the electromagnetic field and by Joule heating via longitudinal coupling of the atom to the dielectric. The spontaneous emission (transverse) decay rate is modified in a dielectric, being the free-space rate multiplied by the real part of the refractive index at the transition frequency of the atom. There is a further modification due to the difference between the macroscopic dielectric field and the local field at the position of the atom. In addition there is a longitudinal decay rate which is proportional to the imaginary part of the dielectric constant and therefore vanishes in non-absorbing media. We derive expressions for each of these rates of decay and discuss the physical mechanisms leading to them.
TL;DR: An overview of atom mirrors, resonators, waveguides, and traps that operate for the most part on the evanescent light-wave mechanism for atom manipulation can be found in this paper.
Abstract: Publisher Summary This chapter presents an overview of atom mirrors, resonators, waveguides, and traps that operate for the most part on the evanescent light-wave mechanism for atom manipulation. For many years, it has been known that light can be used to trap and manipulate small dielectric particles and atoms. In particular, the intense coherent light of lasers has been used to cool neutral atoms down to the micro-Kelvin and now even the nano-Kelvin regimes. The chapter discusses several convex, evanescent light-wave traps or guides in which at least one field is red-detuned, and hence attractive but a centrifugal force or a blue-detuned field provides a repulsive counterforce to allow the atoms to remain confined in stable orbits around the convex, dielectric, and optical resonator. The chapter focuses on the use of the evanescent field for making atom mirrors, resonators, waveguides, and traps. One of the principal experimental drawbacks of the evanescent light-wave mirror is that it requires quite high laser power to produce a sufficiently large potential barrier to reflect atoms with any realistic component of velocity normal to the surface, while not introducing an unacceptable degree of spontaneous emission probability.
TL;DR: In this paper, an optically pumped multiple-quantum-well laser of InGaN-GaN grown on cubic, (111)oriented spinel substrates was constructed by cleaving, and the onset of lasing was clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and highly polarized light output.
Abstract: We report an optically pumped multiple‐quantum‐well laser of InGaN–GaN grown on cubic, (111)‐oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400‐μm‐long cavity at 150 K.
TL;DR: A unified theory of two-level atom coupling to vacuum field reservoirs with mode-density spectra is used to demonstrate that the quantum Zeno effect on excitation decay of the atom is observable in open cavities and waveguides, using a sequence of evolution-interrupting pulses on a nanosecond scale.
Abstract: A unified theory of two-level atom coupling to vacuum field reservoirs with arbitrary mode-density spectra is used to demonstrate that the quantum Zeno effect on excitation decay of the atom (and, correspondingly, inhibition of spontaneous emission) is observable in open cavities and waveguides, using a sequence of evolution-interrupting pulses on a nanosecond scale.
TL;DR: An experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PBG) structures finds that the emitted power is enhanced by a factor of 3.5 at the frequencies near thePhotonic band edge.
Abstract: We present results of an experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PBG) structures. The PBG samples are multilayer AlAs/${\mathrm{Al}}_{0.2}$${\mathrm{Ga}}_{0.8}$As/GaAs p-i-n light-emitting diodes, with layers arranged as a distributed Bragg reflector. The emission spectra normal to the layers are measured, and we use a simple method to model the power spectrum of spontaneous emission from within the structures. We find that the emitted power is enhanced by a factor of 3.5 at the frequencies near the photonic band edge. \textcopyright{} 1996 The American Physical Society.
TL;DR: In this article, the authors investigated quantum-well lasers in which electrons are injected into the quantum well ground state through tunneling, and they showed that the tunneling injection lasers are shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better modulation characteristics when compared to conventional lasers.
Abstract: In conventional quantum-well lasers, carriers are injected into the quantum wells with quite high energies. We have investigated quantum-well lasers in which electrons are injected into the quantum-well ground state through tunneling. The tunneling injection lasers are shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better modulation characteristics when compared to conventional lasers. The underlying physical principles behind the superior performance are also explored, and calculations and measurements of relaxation times in quantum wells have been made. Experimental results are presented for lasers made with a variety of material systems, InGaAs-GaAs-AlGaAs, InGaAs-GaAs-InGaAsP-InGaP, and InGaAs-InGaAsP-InP, for different applications. Both single quantum-well and multiple quantum-well tunneling injection lasers are demonstrated.
01 Jan 1996
TL;DR: Weisbuch et al. as discussed by the authors proposed a method for measuring spontaneous emission in planar semiconductor microcavities using a near-field probe and showed that it is possible to estimate spontaneous emission rate near a surface using Green's functions.
Abstract: Preface. Microcavities and photonic bandgaps: A summary of physics and applications C. Weisbuch, J.G. Rarity. Planar Semiconductor Microcavities. Cavity-polaritons in semiconductor microcavities R.P. Stanley, et al. Critical issues on the strong coupling regime in semiconductor microcavities R. Houdre, et al. Normal-mode coupling in planar semiconductor microcavities T.R. Nelson, Jet al. Dynamical studies of cavity polaritons in semiconductor microcavities: Pump probe measurements and time-resolved photoluminescence J.P. Doran, et al. Spontaneous emission dynamics in planar semiconductor microcavities I. Abram, et al. Magnetic and electric field effects in semiconductor quantum microcavity structures T.A. Fisher, et al. Time resolved photoluminescence from a semiconductor microcavity: Temperature dependence and role of leaky modes F. Tassone, et al. Order of magnitude enhanced spontaneous emission from room-temperature bulk GaAs R. Jin, et al. Optical double-resonant Raman scattering in semiconductor planar microcavities A. Fainstein, et al. Second harmonic generation in a metal-semiconductor-metal monolithic cavity V. Berger. Photonic Bandgap Materials, and Novel Structures. Bandgap engineering of 3-D photonic crystals operating at optical wavelengths V. Arbet-Engels, et al. Microcavities in photonic crystals P.R. Villeneuve, et al. Electromagnetic study of photonic band structures and Anderson localization D. Maystre, et al. Localization of light in 2D random media A. Orlowski, et al. Strategies for the fabrication of photonic microstructures in semiconductors R. M. De La Rue, T.F. Krauss. GaInAsP/InP 2-dimensional photonic crystals T. Baba, T. Matsuzaki. Bound modes oftwo-dimensional photonic crystal waveguides P.St.J. Russel, et al. InAs quantum boxes: Active probes for air/GaAs photonic bandgap microstructures J.M. Gerard, et al. Spontaneous emission and nonlinear effects in photonic band gap materials M.D. Tocci, et al. Guided modes in a 2D photonic-band-gap material: Advantages over the 1D case H. Benisty. Photonic atoms: Enhanced light coupling A. Serpenguzel, et al. Photonic surfaces W.L. Barnes, et al. The opal-semiconductor system as a possible photonic bandgap material S.G. Romanov, C.M. Sotomayor Torres. Partial photonic bandgaps in Bragg directions in polystyrene colloidal crystals C.E. Cameron, et al. Characterising whispering-gallery modes in microspheres using a near-field probe J.C. Knight, et al. Numerical method for calculating spontaneous emission rate near a surface using Green's functions F. Wijnands, et al. Microcavity effects in Er3+-doped optical fibres: Alteration of spontaneous emission from 2D fibre microcavities P.M.W. Skovgaard, et al. Decay time and spectrum of rare earth fluorescence in silvered microfibers H. Zbinden, et al. Device Applications. Commercial light emitting diode technology: Status, trends, and possible future performance M.G. Craford. Resonant cavity LED's: Design, fabrication and analysis of high efficiency LED's H. De Neve, et al. High efficiency resonant cavity LED's N.E.J. Hunt, E.F. Schubert. II-VI resonant cavity light emitting diodes for the mid-infrared J. Bleuse, et al. Carrier and photon dynamics in semiconductor microdisk lasers U. Mohideen, R.E. Slusher. Spontaneous emission control in long wavelength semiconductor micropost lasers A. Karlsson, et al. Vertical-cavity surface-emittin
TL;DR: In this paper, the influence of temperature on the thermal quenching of self-assembled quantum dots (QDs) was measured by monitoring spectral features obtained when probing the PL of small QD ensembles (few hundreds QDs).
21 Apr 1996
TL;DR: In this paper, double heterostructure organic LEDs with separate hole injection and transport layers were used to achieve low turn-on voltages of only about 4 V and a significantly increased quantum efficiency.
Abstract: Organic light emitting diodes with a complex multilayer structure have been successfully fabricated for bright light emission in the entire visible spectral region. The CIE coordinates of the blue, green, and red emitting electroluminescent devices are plotted in the chromaticity diagram. Double heterostructure organic LEDs with separate hole injection and transport layers allow to achieve low turn-on voltages of only about 4 V and a significantly increased quantum efficiency.
TL;DR: In this article, a simple model accounting for 4F3/2 excited-state concentration and emission energy density was proposed to describe the collective behavior of emitting particles in the mixture of two powders.
Abstract: Short (>300-ps) pulses of stimulated emission were found from powders of NdAl3(BO3)4, NdSc3(BO3)4, and Nd:Sr5(PO4)3F laser crystals during 532- and 805-nm excitation. Study of stimulated emission in the mixture of two powders has shown that the different components influence each other. That implies a collective behavior of emitting particles. The main features of experimentally observed stimulated emission are described with a simple model accounting for 4F3/2 excited-state concentration and emission energy density. The threshold of stimulated emission in powders is shown to be inversely proportional to the small-signal amplification along the photon path in the pumped volume.
TL;DR: In this article, an analytical model for the internal quantum efficiency that accounts for light trapping and also considers carrier generation and recombination in back surface fields or substrates is presented. And the analysis is exemplified for state-of-the-art thin-layer silicon solar cells with and without back surface field.
Abstract: Thin-layer silicon solar cells utilize surface textures to increase light absorption and back surface fields to prevent recombination at the silicon-substrate interface. We present an analytical model for the internal quantum efficiency that accounts for light trapping and also considers carrier generation and recombination in back surface fields or substrates. We introduce a graphical representation of experimental data, the so-called Parameter-Confidence-Plot, which allows one to draw maximum information on diffusion lengths and surface recombination velocities from quantum efficiency measurements. The analysis is exemplified for state of the art thin-layer silicon solar cells with and without back surface fields.
TL;DR: In this paper, the luminescence properties of microcavities which are formed by a single layer of poly(para-phenylenevinylene) sandwiched between a dielectric mirror coated with a conducting indium tin oxide layer and a semitransparent metal electrode were studied.
Abstract: We have studied the luminescence properties of microcavities which are formed by a single layer of poly(para‐phenylenevinylene) sandwiched between a dielectric mirror coated with a conducting indium tin oxide layer and a semitransparent metal electrode. Compared with a device without cavity structure, the spectral and spatial emission are significantly narrowed, and the forward emission intensity is enhanced. We measure a spectral linewidth (full width at half maximum) of the cavity modes of about 4 nm in photoluminescence and 20 nm in electroluminescence and an enhancement of luminescence intensity in the forward direction of more than an order of magnitude. The implications of the narrowing of the emission and possible transfer mechanisms for excitation energy are discussed.
TL;DR: Switchings found here for semiconductor rateequation models incorporating a vector electric field, birefringence, and the alpha factor are similar to previously reported experimental results.
Abstract: Switching between linearly polarized states of slightly different optical frequencies with the same transverse-mode pattern is found, as the injection current is increased. Switchings found here for semiconductor rate-equation models incorporating a vector electric field, birefringence, and the α factor are similar to previously reported experimental results.
TL;DR: A complete set of cavity modes in planar dielectric microcavities is presented which naturally includes guided modes and shows that most of these orthonormal fields can be derived from a coherent superposition of plane waves incoming on the stack from the air and from the substrate.
Abstract: A complete set of cavity modes in planar dielectric microcavities is presented which naturally includes guided modes. We show that most of these orthonormal fields can be derived from a coherent superposition of plane waves incoming on the stack from the air and from the substrate. Spontaneous emission of a dipole located inside the microcavity is analyzed, in terms of cavity modes. Derivation of the radiation pattern in the air and in the substrate is presented. The power emitted into the guided modes is also determined. Finally, a numerical analysis of the radiative properties of an erbium atom located in a Fabry-P\'erot multilayer dielectric microcavity is investigated. We show that a large amount of light is emitted into the guided modes of the structure, in spite of the Fabry-P\'erot resonance, which increases the spontaneous emission rate in a normal direction. \textcopyright{} 1996 The American Physical Society.
TL;DR: In this article, the internal dynamics of a multilevel atom are modified in the vicinity of the interface between a vacuum and a simple or multilayered lossless dielectric medium.
Abstract: We show how the internal dynamics of a multilevel atom are modified in the vicinity of the interface between a vacuum and a simple or multilayered lossless dielectric medium. Optical Bloch equations are derived, which take into account the modifications of spontaneous emission rates and energy levels experienced by the atom. van der Waals level shifts are evaluated using the method of images for dielectrics. Spontaneous emission rates and radiation patterns are calculated in a simple way using the Lorentz reciprocity theorem. \textcopyright{} 1996 The American Physical Society.