Showing papers on "Spontaneous emission published in 2016"

CsPbX3 Quantum Dots for Lighting and Displays: Room-Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes

Abstract: Recently, Kovalenko and co-workers and Li and co-workers developed CsPbX3 (X = Cl, Br, I) inorganic perovskite quantum dots (IPQDs), which exhibited ultrahigh photoluminescence (PL) quantum yields (QYs), low-threshold lasing, and multicolor electroluminescence. However, the usual synthesis needs high temperature, inert gas protection, and localized injection operation, which are severely against applications. Moreover, the so unexpectedly high QYs are very confusing. Here, for the first time, the IPQDs' room-temperature (RT) synthesis, superior PL, underlying origins and potentials in lighting and displays are reported. The synthesis is designed according to supersaturated recrystallization (SR), which is operated at RT, within few seconds, free from inert gas and injection operation. Although formed at RT, IPQDs' PLs have QYs of 80%, 95%, 70%, and FWHMs of 35, 20, and 18 nm for red, green, and blue emissions. As to the origins, the observed 40 meV exciton binding energy, halogen self-passivation effect, and CsPbX3@X quantum-well band alignment are proposed to guarantee the excitons generation and high-rate radiative recombination at RT. Moreover, such superior optical merits endow them with promising potentials in lighting and displays, which are primarily demonstrated by the white light-emitting diodes with tunable color temperature and wide color gamut.

Perovskite photonic sources

Abstract: The prospects for light-emitting diodes and lasers based on perovskite materials are reviewed. The field of solution-processed semiconductors has made great strides; however, it has yet to enable electrically driven lasers. To achieve this goal, improved materials are required that combine efficient (>50% quantum yield) radiative recombination under high injection, large and balanced charge-carrier mobilities in excess of 10 cm2 V−1 s−1, free-carrier densities greater than 1017 cm−3 and gain coefficients exceeding 104 cm−1. Solid-state perovskites are — in addition to galvanizing the field of solar electricity — showing great promise in photonic sources, and may be the answer to realizing solution-cast laser diodes. Here, we discuss the properties of perovskites that benefit light emission, review recent progress in perovskite electroluminescent diodes and optically pumped lasers, and examine the remaining challenges in achieving continuous-wave and electrically driven lasing.

Spectral and Dynamical Properties of Single Excitons, Biexcitons, and Trions in Cesium-Lead-Halide Perovskite Quantum Dots.

Abstract: Organic–inorganic lead-halide perovskites have been the subject of recent intense interest due to their unusually strong photovoltaic performance. A new addition to the perovskite family is all-inorganic Cs–Pb-halide perovskite nanocrystals, or quantum dots, fabricated via a moderate-temperature colloidal synthesis. While being only recently introduced to the research community, these nanomaterials have already shown promise for a range of applications from color-converting phosphors and light-emitting diodes to lasers, and even room-temperature single-photon sources. Knowledge of the optical properties of perovskite quantum dots still remains vastly incomplete. Here we apply various time-resolved spectroscopic techniques to conduct a comprehensive study of spectral and dynamical characteristics of single- and multiexciton states in CsPbX3 nanocrystals with X being either Br, I, or their mixture. Specifically, we measure exciton radiative lifetimes, absorption cross-sections, and derive the degeneracies o...

Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations.

Abstract: White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c-plane InGaN/GaN-based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.

Ultrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities

Abstract: Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonstrate the regime of ultrafast spontaneous emission (∼10 ps) from a single quantum emitter coupled to a plasmonic nanocavity at room temperature. The nanocavity integrated with a single colloidal semiconductor quantum dot produces a 540-fold decrease in the emission lifetime and a simultaneous 1900-fold increase in the total emission intensity. At the same time, the nanocavity acts as a highly efficient optical antenna directing the emission into a single lobe normal to the surface. This plasmonic platform is a versatile geometry into which a variety of other quantum emitters, such as crystal color centers, can be int...

Highly efficient quantum dot near-infrared light-emitting diodes

Abstract: Embedding quantum dots in a perovskite matrix yields efficient light emitters. Colloidal quantum dots (CQDs) are emerging as promising materials for constructing infrared sources in view of their tunable luminescence, high quantum efficiency and compatibility with solution processing1. However, CQD films available today suffer from a compromise between luminescence efficiency and charge transport, and this leads to unacceptably high power consumption. Here, we overcome this issue by embedding CQDs in a high-mobility hybrid perovskite matrix. The new composite enhances radiative recombination in the dots by preventing transport-assisted trapping losses; yet does so without increasing the turn-on voltage. Through compositional engineering of the mixed halide matrix, we achieve a record electroluminescence power conversion efficiency of 4.9%. This surpasses the performance of previously reported CQD near-infrared devices two-fold, indicating great potential for this hybrid QD-in-perovskite approach.

Shape-Controlled Synthesis of All-Inorganic CsPbBr3 Perovskite Nanocrystals with Bright Blue Emission

Abstract: We developed a colloidal synthesis of CsPbBr3 perovskite nanocrystals (NCs) at a relative low temperature (90 °C) for the bright blue emission which differs from the original green emission (∼510 nm) of CsPbBr3 nanocubes as reported previously. Shapes of the obtained CsPbBr3 NCs can be systematically engineered into single and lamellar-structured 0D quantum dots, as well as face-to-face stacking 2D nanoplatelets and flat-lying 2D nanosheets via tuning the amounts of oleic acid (OA) and oleylamine (OM). They exhibit sharp excitonic PL emissions at 453, 472, 449, and 452 nm, respectively. The large blue shift relative to the emission of CsPbBr3 bulk crystal can be ascribed to the strong quantum confinement effects of these various nanoshapes. PL decay lifetimes are measured, ranging from several to tens of nanoseconds, which infers the higher ratio of exciton radiative recombination to the nonradiative trappers in the obtained CsPbBr3 NCs. These shape-controlled CsPbBr3 perovskite NCs with the bright blue e...

Shrinking light to allow forbidden transitions on the atomic scale

Abstract: The diversity of light-matter interactions accessible to a system is limited by the small size of an atom relative to the wavelength of the light it emits, as well as by the small value of the fine-structure constant. We developed a general theory of light-matter interactions with two-dimensional systems supporting plasmons. These plasmons effectively make the fine-structure constant larger and bridge the size gap between atom and light. This theory reveals that conventionally forbidden light-matter interactions--such as extremely high-order multipolar transitions, two-plasmon spontaneous emission, and singlet-triplet phosphorescence processes--can occur on very short time scales comparable to those of conventionally fast transitions. Our findings may lead to new platforms for spectroscopy, sensing, and broadband light generation, a potential testing ground for quantum electrodynamics (QED) in the ultrastrong coupling regime, and the ability to take advantage of the full electronic spectrum of an emitter.

Coherent control with a short-wavelength free-electron laser

Abstract: Researchers demonstrate correlation of two colours (63.0 and 31.5 nm wavelengths) in a free-electron laser and control photoelectron angular distribution by adjusting phase with 3 attosecond resolution. Extreme ultraviolet and X-ray free-electron lasers (FELs) produce short-wavelength pulses with high intensity, ultrashort duration, well-defined polarization and transverse coherence, and have been utilized for many experiments previously possible only at long wavelengths: multiphoton ionization1, pumping an atomic laser2 and four-wave mixing spectroscopy3. However one important optical technique, coherent control, has not yet been demonstrated, because self-amplified spontaneous emission FELs have limited longitudinal coherence4,5,6,7. Single-colour pulses from the FERMI seeded FEL are longitudinally coherent8,9, and two-colour emission is predicted to be coherent. Here, we demonstrate the phase correlation of two colours, and manipulate it to control an experiment. Light of wavelengths 63.0 and 31.5 nm ionized neon, and we controlled the asymmetry of the photoelectron angular distribution10,11 by adjusting the phase, with a temporal resolution of 3 as. This opens the door to new short-wavelength coherent control experiments with ultrahigh time resolution and chemical sensitivity.

Controlling spin relaxation with a cavity

Abstract: Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the rate of spontaneous emission can be greatly enhanced by placing the quantum system in a resonant cavity. This effect has since been used extensively to control the lifetime of atoms and semiconducting heterostructures coupled to microwave or optical cavities, and is essential for the realization of high-efficiency single-photon sources. Here we report the application of this idea to spins in solids. By coupling donor spins in silicon to a superconducting microwave cavity with a high quality factor and a small mode volume, we reach the regime in which spontaneous emission constitutes the dominant mechanism of spin relaxation. The relaxation rate is increased by three orders of magnitude as the spins are tuned to the cavity resonance, demonstrating that energy relaxation can be controlled on demand. Our results provide a general way to initialize spin systems into their ground state and therefore have applications in magnetic resonance and quantum information processing. They also demonstrate that the coupling between the magnetic dipole of a spin and the electromagnetic field can be enhanced up to the point at which quantum fluctuations have a marked effect on the spin dynamics; as such, they represent an important step towards the coherent magnetic coupling of individual spins to microwave photons.

A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

Abstract: Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices

Highly indistinguishable on-demand resonance fluorescence photons from a deterministic quantum dot micropillar device with 74% extraction efficiency.

Abstract: The implementation and engineering of bright and coherent solid state quantum light sources is key for the realization of both on chip and remote quantum networks. Despite tremendous efforts for more than 15 years, the combination of these two key prerequisites in a single, potentially scalable device is a major challenge. Here, we report on the observation of bright single photon emission generated via pulsed, resonance fluorescence conditions from a single quantum dot (QD) deterministically centered in a micropillar cavity device via cryogenic optical lithography. The brightness of the QD fluorescence is greatly enhanced on resonance with the fundamental mode of the pillar, leading to an overall device efficiency of η = (74 ± 4) % for a single photon emission as pure as g(2)(0) = 0.0092 ± 0.0004. The combination of large Purcell enhancement and resonant pumping conditions allows us to observe a two-photon wave packet overlap up to ν = (88 ± 3) %.

Monolithically Integrated High-β Nanowire Lasers on Silicon

Abstract: Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III–V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs–AlGaAs core–shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to n...

Two-photon interference from a bright single-photon source at telecom wavelengths

Abstract: Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a beam splitter, which implements effective photon–photon interactions. However, deterministic generation of indistinguishable single photons with high brightness remains a challenging problem. We demonstrate two-photon interference at telecom wavelengths using an InAs/InP quantum dot in a nanophotonic cavity. The cavity enhances the quantum dot emission, resulting in a nearly Gaussian transverse mode profile with high outcoupling efficiency exceeding 36% after multiphoton correction. We also observe a Purcell enhanced spontaneous emission rate of up to 4. Using this source, we generate linearly polarized, high purity single photons at 1.3 μm wavelength and demonstrate the indistinguishable nature of the emission using a two-photon interference measurement, which exhibits indistinguishable visibilities of 18% without postselection and 67% with postselection. Our results provide a promising approach to generate bright, deterministic single photons at telecom wavelength for applications in quantum networking and quantum communication.

Ground State Electroluminescence

Abstract: Electroluminescence, the emission of light in the presence of an electric current, provides information on the allowed electronic transitions of a given system. It is commonly used to investigate the physics of strongly coupled light-matter systems, whose eigenfrequencies are split by the strong coupling with the photonic field of a cavity. Here we show that, together with the usual electroluminescence, systems in the ultrastrong light-matter coupling regime emit a uniquely quantum radiation when a flow of current is driven through them. While standard electroluminescence relies on the population of excited states followed by spontaneous emission, the process we describe herein extracts bound photons from the dressed ground state and it has peculiar features that unequivocally distinguish it from usual electroluminescence.

Broadband Enhancement of Spontaneous Emission in Two-Dimensional Semiconductors Using Photonic Hypercrystals.

Abstract: The low quantum yield observed in two-dimensional semiconductors of transition metal dichalcogenides (TMDs) has motivated the quest for approaches that can enhance the light emission from these systems. Here, we demonstrate broadband enhancement of spontaneous emission and increase in Raman signature from archetype two-dimensional semiconductors: molybdenum disulfide (MoS2) and tungsten disulfide (WS2) by placing the monolayers in the near field of a photonic hypercrystal having hyperbolic dispersion. Hypercrystals are characterized by a large broadband photonic density of states due to hyperbolic dispersion while having enhanced light in/out coupling by a subwavelength photonic crystal lattice. This dual advantage is exploited here to enhance the light emission from the 2D TMDs and can be utilized for developing light emitters and solar cells using two-dimensional semiconductors.

Large spontaneous-emission enhancements in metallic nanostructures: towards LEDs faster than lasers [Invited]

Abstract: Recent progress in the design and realization of optical antennas enclosing fluorescent materials has demonstrated large spontaneous-emission enhancements and, simultaneously, high radiation efficiencies. We discuss here that an important objective of such work is to increase spontaneous-emission rates to such a degree that light-emitting diodes (LEDs) can possess modulation speeds exceeding those of typical semiconductor lasers, which are usually in the range ~20-50 GHz. We outline the underlying physics that enable large spontaneous-emission enhancements in metallic nanostructures, and we then discuss recent theoretical and experimentally promising results, where enhancements larger than a factor of ~300 have been reported, with radiation efficiencies exceeding 50%. We provide key comparative advantages of these structures in comparison to conventional dielectric microcavity designs, namely the fact that the enhancement of spontaneous emission can be relatively nonresonant (i.e., broadband) and that the antenna nanostructures can be spectrally and structurally compatible for integration with a wide class of emitters, including organic dyes, diamond nanocrystals and colloidal quantum dots. Finally, we point out that physical insight into the underlying effects can be gained by analyzing these metallic nanostructures in their equivalent-circuit (or nano-antenna) model, showing that all main effects (including the Purcell factor) can adequately be described in that approach.

Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

Abstract: We present the theoretical and experimental results for the electronic and optical properties of atomically thin (1 and 2 monolayers) GaN quantum wells with AlN barriers. Strong quantum confinement increases the gap of GaN to as high as 5.44 eV and enables light emission in the deep-UV range. Luminescence occurs from the heavy and light hole bands of GaN yielding E ⊥ c polarized light emission. Strong confinement also increases the exciton binding energy up to 230 meV, preventing a thermal dissociation of excitons at room temperature. However, we did not observe excitons experimentally due to high excited free-carrier concentrations. Monolayer-thick GaN wells also exhibit a large electron-hole wave function overlap and negligible Stark shift, which is expected to enhance the radiative recombination efficiency. Our results indicate that atomically thin GaN/AlN heterostructures are promising for efficient deep-UV optoelectronic devices.

Quantum dynamics of Kerr optical frequency combs below and above threshold: Spontaneous four-wave mixing, entanglement, and squeezed states of light

Abstract: The dynamical behavior of Kerr optical frequency combs is very well understood today from the perspective of the semiclassical approximation. These combs are obtained by pumping an ultrahigh-$Q$ whispering-gallery mode resonator with a continuous-wave laser. The long-lifetime photons are trapped within the toruslike eigenmodes of the resonator, where they interact nonlinearly via the Kerr effect. In this article, we use quantum Langevin equations to provide a theoretical understanding of the nonclassical behavior of these combs when pumped below and above threshold. In the configuration where the system is under threshold, the pump field is the unique oscillating mode inside the resonator, and it triggers the phenomenon of spontaneous four-wave mixing, where two photons from the pump are symmetrically up- and down-converted in the Fourier domain. This phenomenon, also referred to as parametric fluorescence, can only be understood and analyzed from a fully quantum perspective as a consequence of the coupling between the field of the central (pumped) mode and the vacuum fluctuations of the various side modes. We analytically calculate the power spectra of the spontaneous emission noise, and we show that these spectra can be either single- or double-peaked depending on the value of the laser frequency, chromatic dispersion, pump power, and spectral distance between the central mode and the side mode of interest. We also calculate as well the overall spontaneous noise power per side mode and propose simplified analytical expressions for some particular cases. In the configuration where the system is pumped above threshold, we investigate the phenomena of quantum correlations and multimode squeezed states of light that can occur in the Kerr frequency combs originating from stimulated four-wave mixing. We show that for all stationary spatiotemporal patterns, the side modes that are symmetrical relative to the pumped mode in the frequency domain display quantum correlations that can lead to squeezed states of light under some optimal conditions that are analytically determined. These quantum correlations can persist regardless the dynamical state of the system (rolls or solitons), regardless of the spectral extension of the comb (number side modes) and regardless of the dispersion regime (normal or anomalous). We also explicitly determine the phase quadratures leading to photon entanglement and analytically calculate their quantum-noise spectra. For both the below- and above-threshold cases, we study with particular emphasis the two principal architectures for Kerr comb generation, namely the add-through and add-drop configurations. It is found that regardless of the configuration, an essential parameter is the ratio between out-coupling and total losses, which plays a key role as it directly determines the efficiency of the detected fluorescence or squeezing spectra. We finally discuss the relevance of Kerr combs for quantum information systems at optical telecommunication wavelengths below and above threshold.

Fundamental limitations in spontaneous emission rate of single-photon sources

Abstract: The rate of single-photon generation by quantum emitters (QEs) can be enhanced by placing a QE inside a resonant structure. This structure can represent an all-dielectric micro-resonator or waveguide and thus be characterized by ultra-low loss and dimensions on the order of wavelength. Or it can be a metal nanostructure supporting localized or propagating surface plasmon-polariton modes that are of subwavelength dimensions, but suffer from strong absorption. In this work, we develop a physically transparent analytical model of single-photon emission in resonant structures and show unambiguously that, notwithstanding the inherently high loss, the external emission rate can be enhanced with plasmonic nanostructures by two orders of magnitude compared to all-dielectric structures. Our analysis provides guidelines for developments of new plasmonic configurations and materials to be exploited in quantum plasmonics.

Purcell-enhanced single-photon emission from nitrogen-vacancy centers coupled to a tunable microcavity

Abstract: Optical microcavities are a powerful tool to enhance spontaneous emission of individual quantum emitters. However, the broad emission spectra encountered in the solid state at room temperature limit the influence of a cavity, and call for ultra-small mode volume. We demonstrate Purcell-enhanced single photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to a tunable fiber-based microcavity with a mode volume down to $1.0\,\lambda^{3}$. We record cavity-enhanced fluorescence images and study several single emitters with one cavity. The Purcell effect is evidenced by enhanced fluorescence collection, as well as tunable fluorescence lifetime modification, and we infer an effective Purcell factor of up to 2.0. With numerical simulations, we furthermore show that a novel regime for light confinement can be achieved, where a Fabry-Perot mode is combined with additional mode confinement by the nanocrystal itself. In this regime, effective Purcell factors of up to 11 for NV centers and 63 for silicon vacancy centers are feasible, holding promise for bright single photon sources and efficient spin readout under ambient conditions.

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

Abstract: In this paper, we compare and contrast the experimental data and the theoretical predictions of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well structures. In both types of structure, the optical properties at low temperatures are governed by the effects of carrier localisation. In polar structures, the effect of the in-built electric field leads to electrons being mainly localised at well width fluctuations, whereas holes are localised at regions within the quantum wells, where the random In distribution leads to local minima in potential energy. This leads to a system of independently localised electrons and holes. In nonpolar quantum wells, the nature of the hole localisation is essentially the same as the polar case but the electrons are now coulombically bound to the holes forming localised excitons. These localisation mechanisms are compatible with the large photoluminescence linewidths of the polar and nonpolar quantum wells as well as the different time scales and form of the radiative recombination decay curves.

Optical gain in GaAsBi/GaAs quantum well diode lasers

Abstract: Optical gain, absorption and spontaneous emission spectra for GaAs 0.978 Bi 0.022 /GaAs laser diodes are measured experimentally and compared with theory. Internal optical losses of 10–15 cm−1 and peak modal gain of 24 cm−1 are measured at threshold. The results of calculations showed excellent agreement with the experiment, key for future laser design.

An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature

Abstract: In this work, we report on the demonstration of an electrically injected AlGaN nanowire laser operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are grown on Si substrate by plasma-assisted molecular beam epitaxy. It is observed that the randomly distributed AlGaN nanowires can strongly confine photons in the deep ultraviolet wavelength range, due to the recurrent multiple scattering of light and the inversely tapered nanowire geometry. The laser exhibits a very low threshold current of 0.35 mA at room temperature. From the detailed rate equation analysis, the spontaneous emission coupling factor is derived to be around 0.012.

Deep-UV nitride-on-silicon microdisk lasers

Abstract: Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10−4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Abstract: Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge double heterostructures (DHS) that were grown directly on a Si substrate via a chemical vapor deposition system. Both photoluminescence and electroluminescence spectra have been characterized at temperatures from 300 to 77 K. Based on our theoretical calculation, all GeSn alloys in this study are indirect bandgap materials. However, due to the small energy separation between direct and indirect bandgap, and the fact that radiative recombination rate greater than non-radiative, the emissions are mainly from the direct Γ-valley to valence band transitions. The electroluminescence emissions under current injection levels from 102 to 357 A/cm2 were investigated at 300 K. The monotonic increase of the integrated electroluminescence intensity was observed for each sample. Moreover, the electronic band structures of the DHS were discussed. Despite the indirect GeSn bandgap owing to the compressive strain, type-I band alignment was achieved with the barrier heights ranging from 11 to 47 meV.

Spontaneous Emission in Nonlocal Materials

Abstract: Light-matter interactions can be dramatically modified by the surrounding environment. Here we report on the first experimental observation of molecular spontaneous emission inside a highly nonlocal metamaterial based on a plasmonic nanorod assembly. We show that the emission process is dominated not only by the topology of its local effective medium dispersion, but also by the nonlocal response of the composite, so that metamaterials with different geometric parameters but the same local effective medium properties exhibit different Purcell factors. A record-high enhancement of a decay rate is observed, in agreement with the developed quantitative description of the Purcell effect in a nonlocal medium. An engineered material nonlocality introduces an additional degree of freedom into quantum electrodynamics, enabling new applications in quantum information processing, photo-chemistry, imaging, and sensing.

First-principles calculations of the near-edge optical properties of β-Ga2O3

Abstract: We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of β-Ga2O3. The fundamental band gap is indirect, but the minimum direct gap is only 29 meV higher in energy, which explains the strong near-edge absorption. Our calculations verify the anisotropy of the absorption onset and explain the range (4.4–5.0 eV) of experimentally reported band-gap values. Our results for the radiative recombination rate indicate that intrinsic light emission in the deep-ultra-violet (UV) range is possible in this indirect-gap semiconductor at high excitation. Our work demonstrates the applicability of β-Ga2O3 for deep-UV detection and emission.