Topic
Spontaneous emission
About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.
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TL;DR: In this paper, a 1.55μm Si-based photonic crystal microcavity light emitters utilizing PbSe quantum dots were designed and characterized. And the authors reported on the design, fabrication, and characterization of 1.
Abstract: The authors report on the design, fabrication, and characterization of 1.55μm Si-based photonic crystal microcavity light emitters utilizing PbSe quantum dots. Efficient coupling of emission from PbSe quantum dots to Si photonic crystal membrane microcavity is achieved by inserting the quantum dots in a central air hole in the microcavity. Enhancement of spontaneous emission with linewidth of ∼2.0nm is observed at 1550nm at room temperature. The Purcell factor and the spontaneous emission coupling factor are estimated to be 35 and 0.04, respectively.
100 citations
TL;DR: It is found that the photondensity of states and local density of states with a full band gap vary slowly near the edge of band gap, in significant contrast to the singular character predicted by the previous isotropic model.
Abstract: Quantum electrodynamics of atom spontaneous emission from a three-dimensional photonic crystal is studied in a full vectorial framework. The electromagnetic fields are quantized via solving the eigenproblem of photonic crystals with use of a plane-wave expansion method. It is found that the photon density of states and local density of states (LDOS) with a full band gap vary slowly near the edge of band gap, in significant contrast to the singular character predicted by the previous isotropic model. Therefore, the spontaneous emission can be solved by conventional Weisskopf-Wigner approximate theory, which yields a pure exponentially decaying behavior with a rate proportional to the LDOS.
99 citations
TL;DR: In this paper, the authors studied the generation and evolution of entangled light in a correlated spontaneous emission laser and derived the master equation for the two-mode field in a cavity and solved it analytically.
Abstract: We discuss the generation and evolution of entangled light in a correlated spontaneous emission laser. The master equation for the two-mode field in a cavity is derived and solved analytically. The time-dependent characteristic function in the Wigner representation for the two-mode field is obtained. It shows that the two-mode field in the cavity evolves in a two-mode Gaussian state. The entanglement degree of the two-mode field in the cavity increases initially, then decreases, and finally vanishes as the field evolves from an initial vacuum. The period of the entanglement is extended as the intensity of the driving field is increased. It is found that the entanglement still exists even when the two-mode squeezing disappears. During the entanglement period, the intensity of the field is amplified. The entanglement for the initial field being a two-mode squeezed vacuum and the entanglement of the output field are also discussed.
99 citations
TL;DR: In this article, the authors demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys, and demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range.
Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.
99 citations
99 citations