Topic
Spontaneous emission
About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.
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TL;DR: It is shown that quasi-metallic carbon nanotubes in the ballistic transport regime their spontaneous emission spectra have a universal frequency and bias voltage dependence, which raises the possibility of utilizing this effect for high-frequency nanoelectronic devices.
Abstract: We demonstrate theoretically that quasi-metallic carbon nanotubes emit terahertz radiation induced by an applied voltage. It is shown that in the ballistic transport regime their spontaneous emission spectra have a universal frequency and bias voltage dependence, which raises the possibility of utilizing this effect for high-frequency nanoelectronic devices.
97 citations
TL;DR: Results obtained by an advanced growth of site-controlled quantum dots (SCQDs) on pre-patterned nanoholes and their integration into both photonic resonators and nanoelectronic memories are summarized.
Abstract: Results obtained by an advanced growth of site-controlled quantum dots (SCQDs) on pre-patterned nanoholes and their integration into both photonic resonators and nanoelectronic memories are summarized. A specific technique has been pursued to improve the optical quality of single SCQDs. Quantum dot (QD) layers have been vertically stacked but spectrally detuned for single SCQD studies. Thereby, the average emission linewidth of single QDs could be reduced from 2.3 meV for SCQDs in a first QD layer close to the etched nanoholes down to 600 µeV in the third InAs QD layer. Accurate SCQD nucleation on large QD distances is maintained by vertical strain induced QD coupling throughout the QD stacks. Record narrow linewidths of individual SCQDs down to ~110 µeV have been obtained. Experiments performed on coupled photonic SCQD–resonator devices show an enhancement of spontaneous emission. SCQDs have also been integrated deterministically in high electron mobility heterostructures and flash memory operation at room temperature has been observed.
97 citations
TL;DR: It is found that the Purcell enhancement saturates when the cavity quality-factor is increased, which limits the maximum achievable spontaneous recombination rate, and the modulation bandwidth is limited to a few tens of GHz for realistic devices.
Abstract: The modulation bandwidth of quantum well nanoLED and nanolaser devices is calculated from the laser rate equations using a detailed model for the Purcell enhanced spontaneous emission. It is found that the Purcell enhancement saturates when the cavity quality-factor is increased, which limits the maximum achievable spontaneous recombination rate. The modulation bandwidth is thereby limited to a few tens of GHz for realistic devices.
97 citations
01 Sep 1986-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the problem of the bunched beam operation of a free electron laser was studied and the Green function corresponding to an arbitrary shape of the electron bunch, which describes the transient behavior of the system, was obtained.
Abstract: We studied the problem of the bunched beam operation of a free electron laser. Assuming the electron beam to be initially monoenergetic, the Maxwell-Vlasov equations describing the system reduce to a third order partial differential equation for the envelope of the emitted light. The Green function corresponding to an arbitrary shape of the electron bunch, which describes the transient behavior of the system, is obtained. We use Green's function to discuss the start-up problem as well as the power output and the power spectrum of self-amplified spontaneous emission.
97 citations
TL;DR: In this paper, the authors showed that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of In(Al)GaAsSb/GaSb diode lasers.
Abstract: Measurements of gain, loss, threshold current, device efficiency and spontaneous emission of 2.5?2.82 ?m In(Al)GaAsSb/GaSb quantum-well diode lasers have been performed over a wide temperature range. The experimental results show that the thermal excitation of holes from the quantum wells into the waveguide where they recombine, but not Auger recombination, limits the continuous-wave room-temperature output power of these lasers, at least up to ? = 2.82 ?m. An approach to extend the wavelength of In(Al)GaAsSb/GaSb diode lasers beyond 3 ?m is discussed.
97 citations