Topic
Spontaneous emission
About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.
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TL;DR: The theory of radiative processes in quantum theory is formulated on the basis of self-energy, in analogy to classical radiation theory, and explicitly carried out for the calculation of the Lamb shift and spontaneous emission.
Abstract: The theory of radiative processes in quantum theory is formulated on the basis of self-energy, in analogy to classical radiation theory, and is explicitly carried out for the calculation of the Lamb shift and spontaneous emission.
85 citations
TL;DR: In this paper, a strain induced single photon source using a WSe2 monolayer on a silver substrate, coated with a very thin dielectric layer, is described.
Abstract: Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultracompact quantum light emitters via strain engineering. In this framework, we discuss experimental results on creation of strain induced single photon sources using a WSe2 monolayer on a silver substrate, coated with a very thin dielectric layer. We identify quantum emitters that are formed at various locations in the sample. Their emission is highly linearly polarized, stable in linewidth, and decay times down to 100 ps are observed. We provide numerical calculations of our monolayer-metal device platform to assess the strength of the radiative decay rate enhancement by the presence of the plasmonic structure. We believe that our results represent a crucial step toward the ultracompact integration of high performance single photon sources in nanoplasmonic devices and circuits.
85 citations
TL;DR: In this paper, a GaAs/AlGaAs microdisk laser has been achieved using continuous optical pumping at 80 K. Surface passivation with a new sulfur/SiNx process is required in order to achieve steady-state lasing.
Abstract: GaAs/AlGaAs microdisk lasers have been achieved using continuous optical pumping at 80 K. Surface passivation with a new sulfur/SiNx process is required in order to achieve steady‐state lasing. Approximately 15% of the spontaneous emission is coupled into the lasing mode.
85 citations
TL;DR: In this article, the authors measured the temperature dependence of GaInAsP/InP lasers in terms of the gain, the loss, the spontaneous emission, and the carrier lifetime, and showed that both the absorption and the nonradiative components significantly influence the temperature characteristics of threshold current.
Abstract: Various factors influencing the temperature dependence of the threshold current of GaInAsP/InP lasers in the wavelength region of 1.5-1.6\mu m were measured in terms of the gain, the loss, the spontaneous emission, and the carrier lifetime. The effects of the intervalence band absorption influence the differential quantum efficiency or the loss, while the nonradiative recombination and the carrier leakage over the heterobarrier influence the carrier lifetime. It is shown from the measured results that both the absorption and the nonradiative components significantly influence the temperature characteristics of threshold current. The rapid increase in the threshold current near room temperature is a reflection of the increase in the intervalence band absorption. The heating effect due to the injection current is also significant. The possible maximum temperature of CW operation is expected to be as high as 150°C with optimized structural parameters.
85 citations
TL;DR: In this paper, a single nitrogen-vacancy (NV) center via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane is presented.
Abstract: We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5 keV-nitrogen ion beam through a pierced tip of an atomic force microscope. We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.
85 citations