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Spontaneous emission
About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.
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337 citations
TL;DR: In this article, a simple rate equation formula is derived for a four-level laser assuming enhanced spontaneous emission into the cavity, and it is shown that the spontaneous emission rate alteration caused by the cavity plays an essentially important role for these characteristics.
Abstract: We describe the light output properties of single mode lasers having cavity dimensions on the order of the emitted wavelength. A simple rate equation formula is derived for a four‐level laser assuming enhanced spontaneous emission into the cavity. These rate equation analyses show that increasing the coupling of spontaneous emission into the cavity mode causes the lasing properties to become quite different from those of usual lasers having cavity dimensions much larger than a wavelength. We find that the lasing threshold disappears, the light emission efficiency increases, relaxation oscillations do not occur, and the dynamic response speed is improved. It is shown that the spontaneous emission rate alteration caused by the cavity plays an essentially important role for these characteristics.
331 citations
TL;DR: In this paper, the phase difference of two laser pairs with equal frequencies was used for the control of spontaneous emission in a four-level system and effects such as extreme spectral narrowing and selective and total cancellation of fluorescence decay were shown as the relative phase is varied.
Abstract: We use the phase difference of two lasers with equal frequencies for the control of spontaneous emission in a four-level system. Effects such as extreme spectral narrowing and selective and total cancellation of fluorescence decay are shown as the relative phase is varied.
330 citations
TL;DR: In this paper, the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes was studied and it was shown that, no matter how many QWs are grown, only the QW nearest the p layer emits light under electrical pumping, which can limit the performances of high power devices.
Abstract: We study the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes. Conventional wisdom would assume that a large number of QWs lead to a smaller carrier density per QW, enabling efficient carrier recombination at high currents. We use angle-resolved far-field measurements to determine the location of spontaneous emission in a series of multi-QW samples. They reveal that, no matter how many QWs are grown, only the QW nearest the p layer emits light under electrical pumping, which can limit the performances of high-power devices.
326 citations
TL;DR: The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode and the single quantum dot spontaneous emission lifetime is reduced.
Abstract: The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
326 citations