Spontaneous emission

About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.

Spontaneous Emission and Laser Oscillation in Microcavities

Abstract: Spontaneous Emission in Optical Cavities: A Tutorial Review, E.V. Goldstein and P. Meystre Introduction Free Space Spontaneous Emission Spontaneous Emission in Cavities Velocity-Dependent Spontaneous Emission Conclusion A Simple Theory on the Effect of Dephasing of Vacuum Fields on Spontaneous Emission in a Microcavity, Y. Lee Introduction Theoretical Model I Theoretical Model II Summary Appendicies A-C Effects of Atomic Broadening on Spontaneous Emission in an Optical Microcavity, K. Ujihara Introduction Analysis of Spontaneous Emission Discussion and Conclusion Microcavities and Semiconductors: The Strong-Coupling Regime, C. Weisbuch, R. Houdre, and R.P. Stanley Introduction The Fabry-Perot Resonator: A Planar Microcavity Models of Strong Light-Matter Coupling Optics of Semiconductors Conclusion Electromagnetic Field Mode Density Calculated via Mode Counting, S.D. Brorson Introduction No Confinement: A Dipole in Free Space One Dimension of Confinement: The Planar Mirror Cavity Two Dimensions of Confinement: The Waveguide Cavity Three Dimensions of Confinement: The Box Microcavity Discussion Spontaneous Emission in Dielectric Planar Microcavities, G. Bjork and Y. Yamamoto Introduction The Ideal Planar Cavity Fundamentals of Dielectric Bragg Mirrors Dielectric Cavity Spontaneous Emission Pattern Dielectric Cavity Spontaneous Emission Lifetime Dielectric Cavity Stimulated Emission Conclusions and Outlooks Spontaneous Emission in Microcavity Surface Emitting Lasers, T. Baba and K. Iga Introduction Spontaneous Emission in a Microcavity Expression of Radiation Energy Modes in Microcavity SELS Spontaneous Emission Factor Effects of Electron Quantum Confinement Lasing Characteristics Summary Spontaneous and Stimulated Emission in the Microcavity Laser, H. Yokoyama Introduction Photon Emission in Microcavities Microcavity Lasers Microcavity Semiconductor Lasers Prospects for Device Applications Summary Recent Progress in Optical Microcavity Experiments, H. Yokoyama Introduction Cavity Configurations Alterations in Spontaneous Emission Properties Laser Oscillation Summary Application of Microcavities: New Photoelectronic Integrated Systems, I. Hayashi Introduction Photoelectronic Integrated Systems Micro-Photoelectronic Devices Summary and Future Prospects Index

Enhanced light amplification due to group-velocity anomaly peculiar to two- and three-dimensional photonic crystals

Abstract: An analytical expression was derived for light amplification by stimulated emission in arbitrary photonic crystals, which showed and enhancement due to small group velocity. This enhancement was evaluated quantitatively for a two-dimensional crystal with a finite thickness, and an extremely large enhancement due to group-velocity anomaly peculiar to two- and three-dimensional crystals was found even for quite a thin crystal.

Efficient radiative recombination from -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

Abstract: InxGa1−xN multiple quantum wells (QWs) with [0001], ⟨112¯2⟩, and ⟨112¯0⟩ orientations have been fabricated by means of the regrowth technique on patterned GaN template with striped geometry, normal planes of which are (0001) and {112¯0}, on sapphire substrates. It was found that photoluminescence intensity of the {112¯2} QW is the strongest among the three QWs, and the internal quantum efficiency of the {112¯2} QW was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {112¯2} QW was about 0.38ns at low temperature, which was 3.8 times shorter than that of conventional [0001]-oriented InxGa1−xN QWs emitting at a similar wavelength of about 400nm. These findings strongly suggest the achievement of stronger oscillator strength owing to the suppression of piezoelectric fields.

Very efficient light emission from bulk crystalline silicon

Abstract: Due to its indirect bandstructure, bulk crystalline silicon is generally regarded as a poor light emitter. In contrast to this common perception, we report here on surprisingly large external photoluminescence quantum efficiencies of textured bulk crystalline silicon wafers of up to 10.2% at T=130 K and of 6.1% at room temperature. Using a theoretical model to calculate the escape probability for internally generated photons, we can conclude from these experimental figures that the radiative recombination probability or internal luminescence quantum efficiency exceeds 20% at room temperature.

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Abstract: The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on GaN templates. For green- and red-emitting InGaN QWs on In0.15Ga0.85N substrate, the spontaneous emission rates were found as ∼2.5-3.2 times of the conventional approach. The enhancement in spontaneous emission rate can be achieved by employing higher In-content InGaN ternary substrate, which is also accompanied by a reduction in emission wavelength blue-shift from the carrier screening effect. The use of InGaN substrate is expected to result in the ability for growing InGaN QWs with enhanced spontaneous emission rates, as well as reduced compressive strain, applicable for green- and red-emitting light-emitting diodes.