Spontaneous emission

About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.

Spontaneous-emission control by photonic crystals and nanocavities

Abstract: We describe the recent experimental progress in the control of spontaneous emission by manipulating optical modes with photonic crystals. It has been clearly demonstrated that the spontaneous emission from light emitters embedded in photonic crystals can be suppressed by the so-called photonic bandgap, whereas the emission efficiency in the direction where optical modes exist can be enhanced. Also, when an artificial defect is introduced into the photonic crystal, a photonic nanocavity is produced that can interact with light emitters. Cavity quality factors, or Q factors, of up to 2 million have been realized while maintaining very small mode volumes, and both spontaneous-emission modification (the Purcell effect) and strong-coupling phenomena have been demonstrated. The use of photonic crystals and nanocavities to manipulate spontaneous emission will contribute to the evolution of a variety of applications, including illumination, display, optical communication, solar energy and even quantum-information systems.

Electrically Induced Optical Emission from a Carbon Nanotube FET

Abstract: Polarized infrared optical emission was observed from a carbon nanotube ambipolar field-effect transistor (FET). An effective forward-biased p-n junction, without chemical dopants, was created in the nanotube by appropriately biasing the nanotube device. Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simultaneously injected into the undoped nanotube. These observations are consistent with a nanotube FET model in which thin Schottky barriers form at the source and drain contacts. This arrangement is a novel optical recombination radiation source in which the electrons and holes are injected into a nearly field-free region. Sucha source may form the basis for ultrasmall integrated photonic devices.

Ge-on-Si laser operating at room temperature.

Abstract: Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.

Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Abstract: Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/ In0.05Ga0.95N (6 nm) multiple quantum wells, by employing transmission electron microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from the cross-sectional direction. It was found that the contrast of light and shade in the well layers corresponds to the difference in In composition. The main radiative recombination was attributed to excitons localized at deep traps which probably originate from the In-rich region in the wells acting as quantum dots. Photopumped lasing was observed at the high energy side of the main spontaneous emission bands.

Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal.

Abstract: We observe large spontaneous emission rate modification of individual InAs quantum dots (QDs) in a 2D photonic crystal with a modified, high-$Q$ single-defect cavity. Compared to QDs in a bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase of up to a factor of 8. In contrast, off-resonant QDs indicate up to fivefold rate quenching as the local density of optical states is diminished in the photonic crystal. In both cases, we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with a pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using finite difference time domain simulations and find good agreement with experiment.