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Spontaneous emission

About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.


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Journal ArticleDOI
TL;DR: In this article, a simple method to fabricate metal-dielectric hyperbolic metamaterials on flat, flexible, and curvilinear substrates, which allows for functionalization of dielectric layers by dye molecules, was developed.
Abstract: We have developed a simple method to fabricate lamellar metal-dielectric hyperbolic metamaterials on flat, flexible, and curvilinear substrates, which allows for functionalization of dielectric layers by dye molecules. The control of spontaneous emission of dye molecules with hyperbolic metamaterials has been studied in two different sample configurations, and the effect has been found to be much stronger when emitters are placed inside the metamaterial rather than on its surface.

164 citations

Journal ArticleDOI
31 Mar 1995-Science
TL;DR: Cathodoluminescence was used to directly image the spatial distribution of the quantum dots by mapping their luminescence and to spectrally resolve very sharp peaks from small groups of dots, thus providing experimental verification for the discrete density of states in a zero-dimensional quantum structure.
Abstract: Ensembles of defect-free InAIAs islands of ultrasmall dimensions embedded in AIGaAs have been grown by molecular beam epitaxy. Cathodoluminescence was used to directly image the spatial distribution of the quantum dots by mapping their luminescence and to spectrally resolve very sharp peaks from small groups of dots, thus providing experimental verification for the discrete density of states in a zero-dimensional quantum structure. Visible luminescence is produced by different nominal compositions of In x AI( 1– x ) As-AI y Ga (1– y ) As.

164 citations

Journal ArticleDOI
TL;DR: The approach is illustrated by a general equivalent scheme, and it allows resenting the Purcell factor through the continuous radiation of a small antenna at the presence of an electromagnetic environment.
Abstract: The Purcell effect is defined as a modification of the spontaneous emission rate of a quantum emitter at the presence of a resonant cavity. However, a change of the emission rate of an emitter caused by an environment has a classical counterpart. Any small antenna tuned to a resonance can be described as an oscillator with radiative losses, and the effect of the environment on its radiation can be modeled and measured in terms of the antenna radiation resistance, similar to a quantum emitter. We exploit this analogue behavior to develop a general approach for calculating the Purcell factors of different systems and various frequency ranges including both electric and magnetic Purcell factors. Our approach is illustrated by a general equivalent scheme, and it allows resenting the Purcell factor through the continuous radiation of a small antenna at the presence of an electromagnetic environment.

164 citations

Journal ArticleDOI
TL;DR: Quantum interference between decay processes from two upper levels, which are coupled by the same vacuum modes to a lower level, have been investigated and its effects on the spontaneous emission spectrum have been studied.
Abstract: Quantum interference between decay processes from two upper levels, which are coupled by the same vacuum modes to a lower level, have been investigated and its effects on the spontaneous emission spectrum have been studied. The interference can result in spectral narrowing and a black dark line in the spectrum. The population in the upper levels is not a simple exponential decay due to the interference.

164 citations

Journal ArticleDOI
TL;DR: In this paper, the authors measured the spectrum and efficiency of infrared light emission from ambipolar carbon nanotube field effect transistors (FET transistors) and found that the spectral and energy efficiency of radiative recombination is between 10-6 and 10-7 photons/electron−hole pair, and the possible quenching mechanisms are discussed.
Abstract: We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10-6 and 10-7 photons/electron−hole pair, and the possible quenching mechanisms are discussed.

164 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202383
2022213
2021360
2020338
2019419
2018453