Topic
Spontaneous emission
About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.
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TL;DR: In this paper, the spontaneous emission from a thin layer of a dilute solution of fluorescent dye molecules within an optical microcavity has been studied, and the results give fundamental information on the kinetics of dye molecules and allow one to speculate about the prospect of using single molecules as sources of single photons for quantum optics.
Abstract: The spontaneous emission from a thin layer of a dilute solution of fluorescent dye molecules within an optical microcavity has been studied. Strong fluctuations in fluorescence intensity are observed when the average number of molecules in the measurement volume is small. We have performed experiments that simultaneously characterize these fluctuations over nine orders of magnitude of time, from ns to s. These measurements have identified photon antibunching characteristic of single-molecule emission, along with triplet-state shelving and diffusion driven number fluctuations. The results give fundamental information on the kinetics of dye molecules and allow one to speculate about the prospect of using single molecules as sources of single photons for quantum optics.
142 citations
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TL;DR: In this article, a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied is presented.
Abstract: We have experimentally obtained and theoretically analyzed a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied. Two distinct islands of chaos have been identified in the injection‐locked region. They are separated by regions of period one and period two solutions. Spontaneous emission noise obscures the observation of high periodic orbits.
142 citations
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TL;DR: The present Letter addresses the flip side of superradiance, i.e., subradiants, which are potentially stable against collective spontaneous emission and can have ultrafast readout.
Abstract: Recent work has shown that collective single photon emission from an ensemble of resonate two-level atoms, i.e., single photon superradiance, is a rich field of study. The present Letter addresses the flip side of superradiance, i.e., subradiance. Single photon subradiant states are potentially stable against collective spontaneous emission and can have ultrafast readout. In particular it is shown how many atom collective effects provide a new way to control spontaneous emission by preparing and switching between subradiant and superradiant states.
142 citations
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TL;DR: In this article, the emission spectra of XeBr, XeCl and KrF at high pressure were obtained by observing spontaneous emission from electron beam excited mixtures of argon containing lesser amounts of xenon with the halogens or krypton with fluorine.
Abstract: The emission spectra of XeBr, XeCl, XeF, and KrF at high pressure are reported and discussed. The spectra were obtained by observing spontaneous emission from electron beam excited mixtures of argon containing lesser amounts of xenon with the halogens or krypton with fluorine. The emitting state in these species is best described as an ionic species Xe+X− or Kr+F−. The wavelengths of these emission bands are in good agreement with a theoretical model in which the ionic binding energy of the noble gas halide ion pair is roughly equal to that of the nearest alkali halide. Our high pressure spectra imply that the lowest potential energy curve for XeF is bound.
142 citations
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TL;DR: In this paper, the authors used anodization techniques to process porous surface regions in p-type Czochralski Si and in P-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy.
Abstract: We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.
142 citations