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Spontaneous emission

About: Spontaneous emission is a research topic. Over the lifetime, 12855 publications have been published within this topic receiving 323684 citations.


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Journal ArticleDOI
TL;DR: In this article, a review of the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions is presented, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, and electron-hole plasma recombination.
Abstract: In this paper we review the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from inelastic excitonic scattering, and electron-hole plasma recombination. Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier densities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives d...

120 citations

Journal ArticleDOI
TL;DR: In this paper, the preparation and purification of GeGa-S glasses were studied and the effects of Ga and S contents on glass transition and crystallization temperatures, density, refractive index and spontaneous emission probabilities from the 4 F 3 2 level of Nd 3+ were examined.
Abstract: The preparation and purification of GeGaS glasses were studied. A purified glass doped with 1000 ppm Pr 3+ exhibits a quantum efficiency of 50% in the 1 G 4 → 3 H 5 transition at 1.3 μm based on fluorescence lifetime measurement and Judd-Ofelt analysis. The effects of Ga and S contents on glass transition and crystallization temperatures, density, refractive index and spontaneous emission probabilities from the 4 F 3 2 level of Nd 3+ were examined. Compositional dependences of properties are discussed in terms of bond types.

120 citations

Journal ArticleDOI
TL;DR: The authors' three-level artificial atom--a superconducting quantum circuit--coupled to a transmission line presents an analog of a natural atom in open space that is the most fundamental quantum amplifier whose gain is limited by a spontaneous emission mechanism.
Abstract: We report amplification of electromagnetic waves by a single artificial atom in open 1D space. Our three-level artificial atom-a superconducting quantum circuit-coupled to a transmission line presents an analog of a natural atom in open space. The system is the most fundamental quantum amplifier whose gain is limited by a spontaneous emission mechanism. The noise performance is determined by the quantum noise revealed in the spectrum of spontaneous emission, also characterized in our experiments.

120 citations

Journal ArticleDOI
TL;DR: In this article, the effect of heat treatment on luminescence properties in the tellurite glass was discussed and the change in optical properties with the variation of Eu3+ ion concentration have been compared and compared with other glasses.

120 citations

Journal ArticleDOI
TL;DR: It is demonstrated how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature.
Abstract: Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III–V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs–AlGaAs core–shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to n...

120 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202383
2022213
2021360
2020338
2019419
2018453