Topic
Sputter deposition
About: Sputter deposition is a research topic. Over the lifetime, 49264 publications have been published within this topic receiving 746832 citations. The topic is also known as: sputter coating.
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TL;DR: In this paper, the potential for high-aspect-ratio trench filling applications by high power pulsed magnetron sputtering is demonstrated by deposition in via-structures.
Abstract: Using a novel pulsed power supply in combination with a standard circular flat magnetron source, operated with a Cu target, a peak power density of 2800 W cm -2 was achieved. This results in a very intense plasma with peak ion current densities of up to 3.4 A cm −2 at the substrate situated 10 cm from the target. The ionized fraction of the deposited Cu flux was estimated to be approximately 70% from deposition rate measurements. The potential for high-aspect-ratio trench filling applications by high power pulsed magnetron sputtering is demonstrated by deposition in via-structures. The high power pulsed technique also results in a higher degree of target utilization and an improved thickness uniformity of the deposited films compared with conventional d.c. magnetron sputtering.
958 citations
01 Jun 2009
TL;DR: In this paper, the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer were fabricated using RF magnetron sputtering at room temperature.
Abstract: We have fabricated the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing In2O3 content and post-annealing temperature. The AT-ZIO TFT exhibited afield effect mobility of 33 cm2/Vs, a sub-threshold swing of 0.08 V/dec, and an on/off current ratio of more than 109 after Al2O3 passivation and post-annealing. We have fabricated AMOLED panels with the bottom gate AT-ZIO TFT back-plane successfully.
933 citations
TL;DR: A critical review of the M(n + 1)AX(n) phases from a materials science perspective is given in this article, where the authors discuss the potential for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates.
905 citations
TL;DR: In this article, a semitransparent thin film pin diode consisting of p-type nickel oxide (NiO) semiconductors was fabricated on a glass substrate and an average transmittance above 20% in the visible range was achieved.
836 citations
TL;DR: In this article, transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated.
Abstract: Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50cm2V−1s−1 are obtained for devices post-deposition annealed at 300 and 600°C, respectively. TTFTs processed at 300 and 600°C yield devices with turn-on voltage of 0–15 and −5–5V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 107 is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n−1)d10ns0 (n⩾4) electronic configurations.
778 citations