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Sputtering

About: Sputtering is a research topic. Over the lifetime, 63425 publications have been published within this topic receiving 936159 citations.


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Journal ArticleDOI
TL;DR: A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process and the dominating zigzag-type edges are proved to be nitrogen terminated.
Abstract: A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.

1,009 citations

Journal ArticleDOI
TL;DR: In this article, the development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed, and the application of a secondary discharge, inductively coupled plasma magnetron (ICP-MS), microwave amplified magnetron, and self-sustained sputtering (SSS) is discussed as well as the hollow cathode magnetron discharges.

972 citations

Journal ArticleDOI
01 Jun 2009
TL;DR: In this article, an indium-oxide-based transparent oxide TFT, which the active layer is prepared by DC sputtering, is presented, and the fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large onstate current.
Abstract: Results on indium-oxide-based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large on-state current. Fabricating oxide TFTs on temperature-sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.

960 citations

Journal ArticleDOI
TL;DR: In this paper, the potential for high-aspect-ratio trench filling applications by high power pulsed magnetron sputtering is demonstrated by deposition in via-structures.
Abstract: Using a novel pulsed power supply in combination with a standard circular flat magnetron source, operated with a Cu target, a peak power density of 2800 W cm -2 was achieved. This results in a very intense plasma with peak ion current densities of up to 3.4 A cm −2 at the substrate situated 10 cm from the target. The ionized fraction of the deposited Cu flux was estimated to be approximately 70% from deposition rate measurements. The potential for high-aspect-ratio trench filling applications by high power pulsed magnetron sputtering is demonstrated by deposition in via-structures. The high power pulsed technique also results in a higher degree of target utilization and an improved thickness uniformity of the deposited films compared with conventional d.c. magnetron sputtering.

958 citations

Journal ArticleDOI
TL;DR: A review of the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems can be found in this article, where the authors also discuss structures that are made for research purposes or for demonstration of the processing capabilities.
Abstract: Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

941 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023859
20221,635
2021972
20201,346
20191,533
20181,668