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Stark effect

About: Stark effect is a research topic. Over the lifetime, 9240 publications have been published within this topic receiving 189278 citations. The topic is also known as: Stark–Lo Surdo effect.


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Journal ArticleDOI
TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter
Abstract: The macroscopic nonlinear pyroelectric polarization of wurtzite AlxGa1-xN, InxGa1-xN and AlxIn1-xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GaN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heterointerfaces. Models of polarization-induced effects in GaN-based devices so far have assumed that polarization in ternary nitride alloys can be calculated by a linear interpolation between the limiting values of the binary compounds. We present theoretical and experimental evidence that the macroscopic polarization in nitride alloys is a nonlinear function of strain and composition. We have applied these results to interpret experimental data obtained in a number of InGaN/GaN quantum wells?(QWs) as well as AlInN/GaN and AlGaN/GaN transistor structures. We find that the discrepancies between experiment and ab initio theory present so far are almost completely eliminated for the AlGaN/GaN-based heterostructures when the nonlinearity of polarization is accounted for. The realization of undoped lattice-matched AlInN/GaN heterostructures further allows us to prove the existence of a gradient in spontaneous polarization by the experimental observation of two-dimensional electron gases?(2DEGs). The confinement of 2DEGs in InGaN/GaN QWs in combination with the measured Stark shift of excitonic recombination is used to determine the polarization-induced electric fields in nanostructures. To facilitate inclusion of the predicted nonlinear polarization in future simulations, we give an explicit prescription to calculate polarization-induced electric fields and bound interface charges for arbitrary composition in each of the ternary III-N alloys. In addition, the theoretical and experimental results presented here allow a detailed comparison of the predicted electric fields and bound interface charges with the measured Stark shift and the sheet carrier concentration of polarization-induced 2DEGs. This comparison provides an insight into the reliability of the calculated nonlinear piezoelectric and spontaneous polarization of group III nitride ternary alloys.

975 citations

Journal ArticleDOI
TL;DR: In this article, a two-hand model is used to calculate the scaling and spectrum of the nonlinear absorption of semiconductors and wide-gap optical solids, and the bound electronic nonlinear refractive index n/sub 2/ is obtained using a Kramers-Kronig transformation.
Abstract: A two-hand model is used to calculate the scaling and spectrum of the nondegenerate nonlinear absorption. From this, the bound electronic nonlinear refractive index n/sub 2/ is obtained using a Kramers-Kronig transformation. The authors include the effects of two-photon and Raman transitions and the AC Stark shift (virtual band blocking). The theoretical calculation for n/sub 2/ shows excellent agreement with measured values for a five-order-of-magnitude variation in the modulus of n/sub 2/ in semiconductors and wide-gap optical solids. Beam distortion methods were used to measure n/sub 2/ in semiconductors. The observations result in a comprehensive theory that allows a prediction of n/sub 2/ at wavelengths beneath the band edge, given only the bandgap energy and the linear index of refraction. Some consequences for all-optical switching are discussed, and a wavelength criterion for the observation of switching is derived. >

956 citations

Book
01 Jan 1972

944 citations

Journal ArticleDOI
TL;DR: With one Rydberg atom the linewidth of the maser transition at about 21 GHz was power broadened and at higher densities asymmetry of the transition was observed, which is ascribed to an ac Stark effect.
Abstract: The exchange of photons between single Rydberg atoms and a single mode of a superconducting cavity with a quality factor $Q=8\ifmmode\times\else\texttimes\fi{}{10}^{8}$ at 2 K was observed. Signals could still be detected with an average number of only 0.06 atom simultaneously in the cavity. With one Rydberg atom the linewidth of the maser transition at about 21 GHz was power broadened and at higher densities asymmetry of the transition was observed, which is ascribed to an ac Stark effect.

879 citations

Journal ArticleDOI
19 Dec 1997-Science
TL;DR: In this paper, the quantum-confined Stark effect in single cadmium selenide (CdSe) nanocrystallite quantum dots was studied, and the electric field dependence of the single-dot spectrum is characterized by a highly polarizable excited state (∼10 5 cubic angstroms, compared to typical molecular values of order 10 to 100 cubic angramss), in the presence of randomly oriented local electric fields that change over time.
Abstract: The quantum-confined Stark effect in single cadmium selenide (CdSe) nanocrystallite quantum dots was studied. The electric field dependence of the single-dot spectrum is characterized by a highly polarizable excited state (∼10 5 cubic angstroms, compared to typical molecular values of order 10 to 100 cubic angstroms), in the presence of randomly oriented local electric fields that change over time. These local fields result in spontaneous spectral diffusion and contribute to ensemble inhomogeneous broadening. Stark shifts of the lowest excited state more than two orders of magnitude larger than the linewidth were observed, suggesting the potential use of these dots in electro-optic modulation devices.

795 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202386
2022128
2021167
2020166
2019177
2018185