State (computer science)

About: State (computer science) is a research topic. Over the lifetime, 24436 publications have been published within this topic receiving 225733 citations.

In-system programmable logic device

Abstract: In-system programmable logic device which may be configured or reconfigured while installed in a user's system. The disclosed device employs non-volatile memory cells (455) such as floating gate transistors as the programmable elements, and hence the device retains a particular programmed logic configuration virtually indefinitely during a powered-down state. The device is operable in a normal state and in several utility states for reconfiguring the device. The device state is controlled by an internal state machine (520) which executes several state equations whose variables are the logic levels driving two dedicated pins and the present device state. One device pin (470) receives serial input data which loads a shift register latch (505). The contents of the latch (505) are employed to select a particular row of the cells to be programmed and the logic level to which the selected cells are to be programmed. The device normal inputs and outputs are isolated from the device during the utility states, so that the user's system does not affect the device operation during the utility states. A voltage multiplier circuit (530) is included to generate the high voltage level necessary to program the floating gate transistors employed as the device memory cells from the device supply voltage, thereby further conserving on the required number of device pins. By programming a particular memory cell, the user may select the state of the device outputs during the utility states as either a present data latched condition or a tri-stated condition.

Semiconductor memory device and memory system

Abstract: Two memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific write operation mode to associate a logic 1 of a write signal with a state in which an electric charge exists in each capacitor. Further, a logic 0 of the write signal is associated with a state in which no electric charge exists in the capacitor to write the same write signal. Two dynamic memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific read operation mode to associate a state in which an electric charge exists in a capacitor of each dynamic memory cell with a logic 1 of a read signal and associate a state in which no electric charge exists in the capacitor with a logic 0 of the read signal in response to a write operation. Thus, the logics 1 of the two read signals are preferentially output.

Fast test generation for sequential circuits

Abstract: An efficient sequential circuit test generation algorithm is presented. The algorithm is based on PODEM and uses a nine-valued logic model. Among the novel features of the algorithm are use of an initial time-frame algorithm and correct implementation of a solution to the previous state information problem. The initial time-frame algorithm determines the number of time-frames required to excite the fault under test and the number of time-frames required to observe the excited fault. This step saves the test generator from doing unnecessary search in the input space. Test generation is done strictly in forward time. The algorithm saves good machine circuit state after test generation to aid in future test generation. Faulty machine state is set to unknown whenever test generation for a fault is begun. This solves the previous state information problem, which has often been ignored by existing test generators. >

Erase method for page mode multiple bits-per-cell flash EEPROM

Abstract: An improved erasing structure for performing a programming back operation and a concurrent verify operation subsequent to application of an erasing pulse in an array of multiple bits-per-cell flash EEPROM memory cells is provided. A memory core array (12) includes a plurality of memory cells and an erase verify reference cell array for generating an upper erased state threshold voltage level. A pre-charge circuit (36a) is used to pre-charge all the array bit lines to a predetermined potential prior to a programming back operation. A reference generator circuit (134) is used for generating a reference output voltage corresponding to a lower erased state threshold voltage level. A switching circuit (P1, N1) is used to selectively disconnect a program current source of approximately 5 νA from the selected certain ones of the columns of array bit lines containing the selected memory core cells which have been correctly programmed back. A sense logic circuit (26, 27) continuously compares a potential on one of the selected bit lines and the reference output voltage corresponding to the lower erase threshold voltage level.

From State Machines to Temporal Logic: Specification Methods for Protocol Standards

Abstract: This paper attempts to lend perspective to several different methods that have been employed for specifying computer communication protocols by comparing a spectrum of specification techniques. The paper characterizes specification languages such as state transition diagrams, variants of temporal logic approaches, and sequence expressions by the extent to Which information is encoded as properties of a single state versus properties of a history of the entire computation state sequence. Taking the prototypical alternating bit protocol as an example, each method is used to specify the requirements for the send process of the distributed system.