Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Semiconductor integrated circuit device including electrostatic protection circuit accommodating drive by plurality of power supplies and effectively removing various types of surge

Abstract: According to a structure in which each transistor of an output buffer transistor group of a gate array structure is electrically isolated, each body potential is set independent Also, a diode-connected transistor is provided between power supplies. An element not used in the output buffer transistor group can be connected without short-circuiting power supply lines between independent power supply lines to form an electrostatic protection circuit that is efficient in layout.

Method for lubricating a high capacity dram cell

Abstract: A dynamic random access memory cell (14) is disclosed which is characterized by a high capacity storage element and small lateral wafer area. The cell (14) is constructed with a word line (40) overlying a split bit line (48, 50), with an underlying transistor 30, and yet thereunder a high capacitance capacitor (34). The word line (40) includes a member (42) isolated from the bit line (36) and formed therethrough to provide the transistor gate conductor. The transistor gate insulator (44) covers the gate conductor (42), and is encircled by a transistor semiconductor region (46) forming a vertical transistor conduction channel. The split bit line elements (48, 50) are in electrical contact with an underlying transistor drain region (126). The transistor conduction channel (46) is also in contact with an underlying transistor source region forming one plate (52) of the capacitor (34). The capacitor plate (52) is a core which is enclosed annularly by dielectric isolation (54). Another semiconductor capacitor plate (56) encircles the dielectric isolation (54).

Switching mode DC-to-DC power supply with improved current sensing

Abstract: A switching rectifier power supply circuit has a power MOS transistor connected in series with half of the primary of a center-tapped transformer, and has rectifiers in series with an inductive load on the secondary side. The gate of the power transistor is driven by a pulse source which is pulse-width modulated in response to the load voltage, and also controlled in response to the current through the power transistor. To prevent leading-edge current spikes due to turn-on of the power transistor from adversely affecting the pulse-width modulator, yet allow trailing-edge current spikes due to transformer saturation to be compensated for, an inhibit circuit is included in the control path responding to current through the power transformer.

Pulse output circuit, shift register, and display device

Abstract: An object is to suppress change of a threshold voltage of a transistor in a shift register and to prevent the transistor from malfunctioning during a non-selection period. A pulse output circuit provided in the shift register regularly supplies a potential to a gate electrode of a transistor which is in a floating state so that the gate electrode is turned on during a non-selection period when a pulse is not outputted. In addition, supply of a potential to the gate electrode of the transistor is performed by turning on or off another transistor regularly.