Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

N-channel voltage regulator

Abstract: A power-efficient power regulation circuit for use in semiconductor circuit powered by a power signal includes an N-channel transistor which provides a regulated power signal having a stabilized voltage level for use by the semiconductor circuit. A bias pull-up circuit is coupled to the gate of the N-channel transistor and arranged for biasing the N-channel transistor so that it normally conducts current, and a resistive circuit, including a resistive element arranged in series with a resistor-arranged P-channel transistor, is coupled to the source of the N-channel transistor and, in response to the regulated power signal, provides a feedback control signal. A voltage control circuit, coupled to the bias pull-up circuit and the resistive circuit, is activated to control the N-channel transistor in response to the feedback control signal. The voltage control circuit may include an enabling transistor which is activated to enable the voltage control circuit.

Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell

Abstract: A magnetic random access memory (MRAM) having a vertical structure transistor has the characteristics of faster access time than SRAM, high density as with DRAM, and non-volatility like a flash memory device. The MRAM has a vertical structure transistor, a first word line including the transistor, a contact line connected to the transistor, a magnetic tunnel junction (MTJ) cell deposited on the contact line, a bit line deposited on the MTJ cell, and a second word line deposited on the bit line at the position of MTJ cell. With the disclosed structure, it is possible to improve the integration density of a semiconductor device, to increase the short channel effect, and to improve the control rate of the resistance, while using a simplified manufacturing process.

Luminous display device

Abstract: PROBLEM TO BE SOLVED: To reduce loss power in an active element controlling luminescence of respective pixels of an organic EL display device. SOLUTION: One pixel of an organic EL element is provided with two active elements of a selection transistor 3 and a drive transistor 5. Then, the selection transistor 3 is connected to a gate line 1 and a drain line 2. Further, the drive transistor 5 is connected to the selection transistor 3. Then, three first-third EL elements 11, 12, 13 are serially connected to the drive transistor 5. Then, even when a current flowing through respective EL elements 11, 12, 13 is reduced, required luminance is obtained. Then, the current flowing through the drive transistor 5 is reduced, and loss potential in the drive transistor 5 is lowered. Thus, the loss power in the drive transistor 5 is reduced. COPYRIGHT: (C)2000,JPO

Thin film transistor having an annealed gate oxide and method of making same

Abstract: A new and improved thin film field effect transistor and method provides such a transistor having increased operating frequencies and higher output currents. The transistor includes a gate electrode having a non-coplanar surface with respect to the substrate and a deposited semiconductor material overlying the gate electrode to form a current conductor channel between a source and drain. The length of the current conduction channel is determined by the thickness of the gate electrode which can be accurately controlled. As a result, short channel lengths are possible without high precision photolithography for high output currents and fast operating speeds. Further, a gate insulator is disposed between the gate and the deposited semiconductor. The gate insulator, which can be a gate oxide, can be annealed prior to the deposition of the deposited semiconductor to provide enhanced field effect mobilities. This further increases the transistor output currents and operating speeds.

New effects of trench isolated transistor using side-wall gates

Abstract: In order to realize a high performance switching transistor, a new trench isolated transistor with side-wall gates has been developed. In this transistor with a triple-gate structure, the side-wall of the trench is used as an extra-channel region. The new effects of trench isolated transistor with a triple-gate structure have been described. The advantages of this transistor are excellent cutoff characteristics, a small substrate bias effect and high reliability characteristics. It is found that the side-wall gate along the channel edge plays an important role for increasing the gate controllability and for decreasing the concentration of the electric field at the drain.