Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Vertical field effect transistor and diode

Abstract: A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).

Magnetic spin transistor device, logic gate & method of operation

Abstract: A new magnetic spin transistor is provided. This spin transistor can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin transistor logic gate is set inductively. This new magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive coupling permits the linking of multiple spin transistors and spin transistor gates to perform combinational tasks. A half adder embodiment is specifically described, and other logic gates and combinations of half adders can be constructed to perform arithmetic functions as part of a microprocessor.

Static and dynamic analysis of amorphous-silicon field-effect transistors

Abstract: Analytical expressions have been developed for the analysis of static and dynamic behaviour of hydrogenated-amorphous-silicon based field-effect transistors. The current/voltage, capacitances and transcapacitances/voltage characteristics are related to the material parameters. The characteristic temperature, Tc, of the exponential band-tail states distribution is shown to influence strongly their shape and magnitude. An exact integration of the potential in the structure has allowed us to give expressions for the source and drain resistances. Finally, we present an equivalent circuit of a-Si:H TFT which can be employed in circuit simulation for the optimisation of integrated circuits.

Transistor circuit, display panel and electronic apparatus

Abstract: A transistor circuit is provided including a driving transistor where conductance between the source and the drain is controlled in response to a supplied voltage, and a compensating transistor where the gate is connected to one of the source and the drain, the compensating transistor being connected so as to supply input signals to the gate of the driving transistor through the source and drain. In a transistor circuit where conductance control in a driving transistor is carried out in response to the voltage of input signals, it is possible to control the conductance by using input signals of a relatively low voltage and a variance in threshold characteristics of driving transistors is compensated. With this transistor circuit, a display panel that can display picture images with reduced uneven brightness is achieved.

MOS Power transistor with improved high-voltage capability

Abstract: Device means for reducing latch-back breakdown thus raising the reverse-biased power capability of a DMOS transistor or the like. A DMOS transistor is an MOS field effect transistor comprising a lightly-doped (usually diffused) body region formed in a drain region; a heavily-doped source region is located in the body region in proximity to the drain. Since such a device structure also exhibits substantial bipolar transistor action, it is prone to latch-back breakdown. Means for reducing latch-back breakdown include providing a distributed diode with a lower breakdown voltage than the DMOS transistor to non-destructively absorb reverse transients or by providing shunt conductance means for the diffused channel region to reduce both the voltage and the voltage gradient in the base of the parasitic bipolar device. These means may be used singly or in combination.