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Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.


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Patent
29 Aug 2011
TL;DR: In this article, a driving method of a semiconductor device including bit lines, selection lines, a selection transistor, m (m is a natural number greater than or equal to 2) writing word lines, m reading word line, a source line, and first to m-th memory cells, each memory cell includes a first transistor and a second transistor that holds charge accumulated in a capacitor.
Abstract: A driving method of a semiconductor device is provided. In a semiconductor device including a bit line, a selection line, a selection transistor, m (m is a natural number greater than or equal to 2) writing word lines, m reading word lines, a source line, and first to m-th memory cells, each memory cell includes a first transistor and a second transistor that holds charge accumulated in a capacitor. The second transistor includes a channel formed in an oxide semiconductor layer. In a driving method of a semiconductor device having the above structure, when writing to a memory cell is performed, the first transistor is turned on so that a first source terminal or a first drain terminal is set to a fixed potential; thus, a potential is stably written to the capacitor.

31 citations

Patent
13 Aug 1979
TL;DR: In this paper, an active element discharging transistor coupled between the base of the pulldown element transistor and ground or low potential for diverting and discharging the so-called capacitive feedback Miller current generated during the low to high potential transition at the output of the device resulting from base-collector junction capacitance in the pull down element transistor.
Abstract: A transistor logic output device is provided with an active element discharging transistor coupled between the base of the pulldown element transistor and ground or low potential for actively controlling a route to ground or low potential for diverting and discharging the so-called capacitive feedback Miller current generated during the low to high potential transition at the output of the device resulting from base-collector junction capacitance in the pulldown element transistor. The active element discharging transistor is controlled at its base by the potential at the collector of the phase splitter element and is coupled to follow changes in voltage at the phase splitter collector for receiving base drive current during the transition from low to high potential at the device output and when the phase splitter is not conducting. The active element thereby provides a low impedance path to ground or low potential at the base of the pulldown element transistor means for diverting and discharging the capacitive Miller feedback current. When the phase splitter is conducting, the active element discharge transistor is deprived of base drive current and affords a high impedance.

31 citations

Journal ArticleDOI
TL;DR: In this article, an analysis of a double-gate thin-film transistor structure is made, and equations for current flow for different input conditions on each gate are derived for different inputs.
Abstract: An analysis is made of a double-gate thin-film transistor structure, and equations are derived for current flow for different input conditions on each gate. The use of two independent gates allows the possibility of simultaneously maintaining depletion and enhancement regions along the channel, and Poisson's equation is used to find the field and potential distribution along the channel. It is shown that by proper manipulation of the second gate, characteristic curves ranging from the normal TFT "pentode" curves to "triode" curves can be obtained from the same device. A comparison is given of experimental and theoretical results.

31 citations

Patent
30 Aug 1979
TL;DR: A switch-arc preventing continuous current circuit for protecting pulsing contact telephone exchange switches is described in this paper, where the power electrodes of the first transistor are disposed in circuit between an inductive coil of a stepping solenoid and a protected switch, a bias voltage source connected to a terminal of the protected switch by a blocking diode and a pair of resistors in series.
Abstract: A switch-arc preventing continuous current circuit for protecting pulsing contact telephone exchange switches, the circuit having a first transistor in circuit with and controlled by a control transistor, the power electrodes of the first transistor being disposed in circuit between an inductive coil of a stepping solenoid and a protected switch, a bias voltage source connected to a terminal of the protected switch by a blocking diode and a pair of resistors in series, and a metal oxide varistor in shunt across the power electrodes of the first transistor.

31 citations

Patent
09 Mar 2004
TL;DR: In this article, a pixel circuit of an organic electroluminescence display device that can detect variation in a threshold voltage and compensate itself, and its driving method, was provided, where the pixel circuit was equipped with a 1st transistor T32 which transmits a data signal of voltage level in response to a current scan line signal, a 2nd transistor T31 which generates a driving current with the data signal, and a 3rd transistor T33 which detects variation in the threshold voltage of the 2ndistor T31 to compensate itself.
Abstract: PROBLEM TO BE SOLVED: To provide a pixel circuit of an organic electroluminescence display device that can detect variation in a threshold voltage and compensate itself, and its driving method. SOLUTION: The pixel circuit of the organic electroluminescence display device is equipped with a 1st transistor T32 which transmits a data signal of voltage level in response to a current scan line signal, a 2nd transistor T31 which generates a driving current with the data signal of voltage level transmitted through the 1st transistor T32, a 3rd transistor T33 which detects variation in the threshold voltage of the 2nd transistor T31 to compensate itself, a capacitor C31 for storing the data signal of voltage level transmitted to the 2nd transistor T31, and an EL element E31 which emits light corresponding to the driving current generated through the 2nd transistor T31. COPYRIGHT: (C)2005,JPO&NCIPI

31 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
20225
20211
20203
20196
20189